STMicroelectronics STP17NK40ZFP

Overview

STP17NK40ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 400 V drain-source voltage, 220 mΩ typical R_DS(on), and 15 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested ruggedness (E_AS = 450 mJ), and low gate charge (65 nC), making it suitable for hard-switched SMPS primary-side switching in industrial AC-DC converters.

For engineers reviewing the STP17NK40ZFP datasheet, STP17NK40ZFP pinout, STP17NK40ZFP application, or STP17NK40ZFP equivalent, key selection criteria include its TO-220FP insulated package (2.5 kV RMS isolation), avalanche energy rating, gate threshold voltage (3.0–4.5 V), and Zener-protected gate structure - all critical for reliable high-voltage flyback and resonant converter designs.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce R_DS(on) and intrinsic capacitance (C_iss = 1900 pF, C_oss = 271 pF) while maintaining robust dv/dt immunity. Its Zener-protected gate withstands ±30 V V_GS and 4.5 kV HBM ESD stress.

The MOSFET features a fast, soft-recovery body diode (t_rr = 332 ns, Q_rr = 2.65 µC) and operates across −55 to 150 °C junction temperature. Thermal resistance is R_thJC = 3.6 °C/W, enabling 35 W dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Pinout & Package

STP17NK40ZFP is housed in a TO-220FP (Type B) package with internal insulation between leads and mounting base, enabling direct heatsink attachment without insulating hardware. The package provides creepage/clearance compliant with reinforced isolation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP16NF40 and IPP60R190C6, STP17NK40ZFP uniquely combines Zener gate protection, 2.5 kV insulation, and guaranteed avalanche energy - making it the only choice for space-constrained, high-reliability 400 V flyback designs requiring minimal external components.

Availability

STP17NK40ZFP is available at Aetrix Electronics and suitable for industrial AC-DC SMPS, LED driver power stages, and UPS inverter half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP17NK40ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP17NK40ZFP belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial off-line power supplies where ruggedness, low conduction loss, and gate protection are mandatory.

FAQ

Is STP17NK40ZFP suitable for use without a gate resistor?

No. A gate resistor (typically 4.7 Ω) is required to control dV/dt and prevent oscillation during switching. The datasheet specifies switching times (e.g., t_d(on) = 25 ns) and gate charge (65 nC) under 4.7 Ω drive conditions. Omitting the resistor risks shoot-through, EMI, and gate ringing due to parasitic inductance.

Can STP17NK40ZFP replace STP16NF40 in existing designs?

Yes, with caveats: both share TO-220FP pinout and 400 V rating, but STP17NK40ZFP offers lower R_DS(on) (250 mΩ vs. 300 mΩ), Zener gate protection, and guaranteed avalanche rating. Layout changes are unnecessary, but gate drive may require minor tuning due to differing Q_g (65 nC vs. ~50 nC).

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is defined by the safe operating area (SOA) curve and thermal limits. At I_D = 15 A, T_C must not exceed 100 °C to maintain 9.4 A continuous rating. Derating is required above that point; junction temperature must stay ≤150 °C, enforced by R_thJC = 3.6 °C/W and heatsink design.

Does the TO-220FP package require insulating hardware when mounted to a heatsink?

No. The TO-220FP (Type B) package integrates electrical insulation between the mounting base and all three leads, rated for 2.5 kV RMS isolation. Direct metal-to-metal heatsink contact is permitted and recommended to minimize thermal resistance - no mica pad or sil-pad is needed unless system-level safety standards demand additional creepage.