STMicroelectronics STP180N55F3

Overview

STP180N55F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 55 V V_DS, 3.8 mΩ R_DS(on) at V_GS = 10 V and 60 A, 120 A continuous drain current (T_C = 25°C), and 330 W power dissipation. It delivers ultra-low on-resistance, rugged avalanche capability, and low gate charge for high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STP180N55F3 datasheet, STP180N55F3 pinout, STP180N55F3 application, or STP180N55F3 equivalent, key selection criteria include its 55 V breakdown voltage, 3.8 mΩ on-resistance at 10 V gate drive, 120 A thermal-limited current, 1000 mJ single-pulse avalanche energy, and TO-220 mechanical compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs ST's STripFET™ III process with strip-based cell architecture, enabling high die packing density and reduced process alignment sensitivity. Its design emphasizes low conduction loss and robust unclamped inductive switching performance.

The device features a fast-recovery source-drain diode with 60 ns reverse recovery time and 0.11 µC reverse recovery charge under 120 A, 100 A/µs di/dt conditions at T_j = 150°C - critical for synchronous rectification and hard-switched topologies.

Key Specifications

Pinout & Package

STP180N55F3 uses the standard TO-220 package (3-lead, through-hole) with isolated tab (drain-connected). The package complies with ECOPACK® environmental requirements and supports lead-free soldering up to 300°C peak lead temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP1807PBF and IXTH120N55L2, STP180N55F3 offers optimal balance of TO-220 mechanical compatibility, 3.8 mΩ conduction loss, and 100 nC gate charge - making it ideal for cost-sensitive, space-constrained 48 V industrial power stages where standard gate drivers and heatsinks are already deployed.

Availability

STP180N55F3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and proven ruggedness in high-current switching.

Supply support for STP180N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor control applications where low R_DS(on), avalanche robustness, and thermal reliability are critical.

FAQ

Is STP180N55F3 suitable for 48 V battery-powered motor controllers?

Yes. With 55 V V_DS rating and 120 A continuous current capability, STP180N55F3 supports 48 V nominal systems including peak transients up to 55 V. Its 1000 mJ avalanche energy and 60 ns diode recovery ensure robust operation during regenerative braking and inductive kickback events typical in brushed and BLDC motor drives.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±20 V per datasheet Table 1. For reliable long-term operation, ST recommends limiting V_GS to ≤15 V in normal use. Driving at 10 V achieves full enhancement (R_DS(on) = 3.8 mΩ), while 12–15 V further reduces on-resistance marginally without significant benefit - and increases gate oxide stress risk over time.

Does STP180N55F3 have a built-in ESD protection diode on the gate?

No. STP180N55F3 does not integrate gate ESD protection. Its gate oxide is rated for ±20 V absolute maximum, and gate leakage is specified at ±200 nA. System-level ESD protection (e.g., 10 Ω series resistor + 12 V TVS clamp) is required during PCB handling and assembly to prevent latent damage from human-body-model discharges.

Can STP180N55F3 replace STB180N55F3 in existing designs?

Yes, with mechanical and thermal caveats. Both share identical electrical specs (55 V, 120 A, 330 W), but STP180N55F3 uses TO-220 while STB180N55F3 uses D²PAK. Pinout is identical (G-D-S), but TO-220 has lower R_thj-case (0.45 vs. 0.35 °C/W for D²PAK) and different mounting - requiring heatsink redesign and revalidation of thermal performance and mechanical clearance.