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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP185N10F3

Name: STP185N10F3
Brand: STMicroelectronics
SKU: STP185N10F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP185N10F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP185N10F3.pdf

Description:: MOSFET N-CH 100V 120A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:6,982

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Product details

Overview

STP185N10F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET designed for high-current switching in automotive systems. It delivers 100 V drain-source voltage rating, 4.8 mΩ typical R_DS(on) at V_GS = 10 V, 120 A continuous drain current (T_C = 25 °C), and features TO-220 package with ultra-low on-resistance and 100% avalanche tested ruggedness.

For engineers reviewing the STP185N10F3 datasheet, STP185N10F3 pinout, STP185N10F3 application, or STP185N10F3 equivalent, key selection criteria include thermal resistance (R_thj-case = 0.5 °C/W), gate charge (Q_g = 100 nC typ.), diode forward voltage (V_SD = 1.5 V at I_SD = 120 A), and unclamped inductive switching capability.

Technical Context

This MOSFET employs ST's "single feature size" strip-based STripFET™ III process, enabling high cell density and low R_DS(on) without compromising avalanche robustness. Its gate threshold voltage (2–4 V) ensures compatibility with standard 10 V logic-level drive, while the 100% avalanche-tested specification confirms reliability under inductive load transients.

The device supports high-speed switching with specified dynamic parameters including C_iss, C_oss, and C_rss (values TBD per datasheet), and exhibits low reverse recovery charge (Q_rr) and time (t_rr) in its integrated body diode-critical for synchronous rectification and freewheeling in DC-DC converters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before breakdown; suitable for 48 V automotive bus and 24 V industrial systems with margin.
R_DS(on)	4.8 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 120 A, reducing heatsink requirements.
I_D (cont)	120 A @ T_C = 25 °C - Continuous current limited by TO-220 package thermal capacity, not silicon.
E_AS	TBD - Single-pulse avalanche energy rating confirms survivability during unclamped inductive switching events.
R_thj-case	0.5 °C/W - Junction-to-case thermal resistance enables efficient heat transfer to heatsink in high-power applications.
V_GS(th)	2–4 V - Gate threshold range ensures reliable turn-on with standard logic-level drivers and avoids false triggering.
Q_g	100 nC typ. - Total gate charge determines driver strength requirement and switching loss trade-off.

Pinout & Package

STP185N10F3 uses the TO-220 package (3-pin, through-hole), with Drain connected to the metal tab for direct heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤±20 V drive; 100 nC total charge demands capable gate driver.
Pin 2 (D)	Drain	Main power output terminal; electrically tied to metal tab for low-inductance heatsinking and thermal path.
Pin 3 (S)	Source	Power return and reference node; forms common source configuration with gate drive referenced to this node.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.8 mΩ enables <1 W conduction loss at full rated current, minimizing thermal design burden.
100% avalanche tested	Guarantees operation under unclamped inductive switching stress without failure-critical for motor control and solenoid drivers.
STripFET™ III process	Delivers high packing density and manufacturing reproducibility, ensuring consistent parametric yield across production lots.
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards.

Applications

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: High-side load switching for headlights, cooling fans, and HVAC actuators in 12/24 V vehicle architectures.

IC Role / Device Role: N-channel high-side switch with external level-shifting gate drive; used with integrated current sensing and diagnostics.

Use Value: 4.8 mΩ R_DS(on) minimizes power loss and self-heating during sustained 60–100 A loads, extending relay life and improving system efficiency.

Use Scenario: Half-bridge low-side switching in 48 V industrial brushless DC motor controllers.

IC Role / Device Role: Low-side power switch handling bidirectional current up to 120 A with fast freewheeling via integrated body diode.

Use Value: Low Q_g (100 nC) and rugged avalanche rating support 20–50 kHz PWM operation with reduced gate drive loss and fault tolerance.

Truck ABS Solenoid Driver

Telecom 48 V DC-DC Converter

Use Scenario: Driving high-current solenoids in anti-lock braking systems requiring fast turn-on/turn-off and energy recirculation.

IC Role / Device Role: Unclamped inductive load switch with controlled diode recovery (t_rr, Q_rr) to limit voltage spikes.

Use Value: 1.5 V V_SD and low Q_rr reduce dissipation during flyback, enabling compact snubberless designs meeting ISO 7637-2 pulse immunity.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V input, 12 V output telecom power supplies.

IC Role / Device Role: Secondary-side N-channel MOSFET operating in synchronous rectification mode with gate driven by transformer-coupled signal.

Use Value: Low R_DS(on) and optimized C_oss/C_rss ratio improve light-load efficiency and reduce EMI compared to Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4110PBF	R_DS(on) = 4.5 mΩ @ 10 V, but higher Q_g (130 nC); TO-247 package.	Larger footprint and higher gate drive demand; better suited for lower-frequency, higher-voltage (120 V) designs.	Select when higher V_DSS margin or legacy TO-247 board layout is required.
IXTH120N10L2	R_DS(on) = 4.2 mΩ @ 10 V, but rated only to 100 A continuous; TO-247 package.	Lower current rating limits use in sustained 120 A applications; optimized for high-speed switching over peak current.	Prefer when switching frequency >100 kHz dominates over conduction loss, and thermal management allows lower I_D.

Compared with IRFP4110PBF and IXTH120N10L2, STP185N10F3 offers optimal balance of low R_DS(on), moderate Q_g, TO-220 mechanical compatibility, and automotive-qualified ruggedness-making it preferred for cost-sensitive, thermally constrained 120 A automotive switching where layout space and gate drive simplicity matter.

Availability

STP185N10F3 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, truck ABS solenoid drivers, and telecom 48 V DC-DC converters requiring stable component supply and long-term manufacturability assurance.

Supply support for STP185N10F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP185N10F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion where low conduction loss, avalanche robustness, and thermal performance are critical.

FAQ

Is STP185N10F3 qualified for automotive applications?

Yes. STP185N10F3 is specified for automotive use with operating junction temperature from –55 °C to 175 °C, 100% avalanche testing, and ECOPACK® compliance. Though not explicitly labeled "AEC-Q101 qualified" in this preliminary datasheet, its absolute maximum ratings, test conditions, and application focus align with automotive-grade stress requirements.

What is the recommended gate resistor value for STP185N10F3 in a 20 kHz motor drive?

For 20 kHz PWM with minimal overshoot and EMI, a 4.7 Ω gate resistor is validated per Figure 2 in the datasheet. This value balances switching speed (typ. t_f/t_r < 100 ns) and gate driver stress. Lower values increase dV/dt risk; higher values raise switching losses above 50 W at full load.

Can STP185N10F3 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables current sharing. Use matched gate resistors (≤5% tolerance), symmetrical PCB layout, and individual Kelvin source connections. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Does STP185N10F3 have a built-in ESD protection diode on the gate?

No. The datasheet does not specify integrated gate ESD protection. External Zener clamping (e.g., 15 V TVS between gate and source) is recommended for handling >2 kV HBM events in automated assembly or field environments with static-prone handling.

STP185N10F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP185N10F3 FAQ

1.How can I place an order for STP185N10F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP185N10F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP185N10F3 reliable?

The price and inventory of STP185N10F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP185N10F3 is usually 5 days.

3.What payment methods are accepted for STP185N10F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP185N10F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP185N10F3?

STP185N10F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP185N10F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP185N10F3?

For technical support, including STP185N10F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP185N10F3 requirements.

6.How does Aetrix verify that STP185N10F3 is sourced from the original manufacturer or authorized distributors?

All STP185N10F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP185N10F3 meets industry standards.

7.What is the process for return or replacement of STP185N10F3?

All STP185N10F3 units undergo pre-shipment inspection (PSI). If there is an issue with STP185N10F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP185N10F3 part is unused and in its original packaging.

Return procedure for STP185N10F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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