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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP18N55M5

Name: STP18N55M5
Brand: STMicroelectronics
SKU: STP18N55M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP18N55M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP18N55M5.pdf

Description:: MOSFET N-CH 550V 16A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP18N55M5 from STMicroelectronics is an N-channel 550 V, 16 A Power MOSFET in TO-220 package, fabricated with MDmesh M5 vertical process technology. It delivers 150 mΩ typ. / 192 mΩ max. R_DS(on) at V_GS = 10 V and ID = 8 A, supports 64 A pulsed drain current, and is 100% avalanche tested for ruggedness in high-voltage switching applications such as AC-DC PFC stages and industrial SMPS.

For engineers reviewing the STP18N55M5 datasheet, STP18N55M5 pinout, STP18N55M5 application, or STP18N55M5 equivalent, key selection criteria include its low gate charge (31 nC), fast switching times (td(v) = 37 ns, tr(v) = 7 ns), high dv/dt immunity (15 V/ns), and integrated source-drain diode with 244 ns reverse recovery time at 150 °C junction temperature.

Technical Context

This MOSFET employs ST's MDmesh M5 process to achieve ultra-low R_DS(on) while maintaining 550 V breakdown voltage and robust unclamped inductive switching capability (E_AS = 210 mJ). Its optimized capacitance profile (C_iss = 1260 pF, C_rss = 3.6 pF) enables high-efficiency hard-switching operation up to several hundred kHz.

The device integrates a fast-recovery body diode (Q_rr = 2.8 µC, t_rr = 244 ns at TJ = 25 °C) and exhibits stable threshold voltage (V_GS(th) = 3–5 V) and on-resistance over temperature (R_DS(on) norm. = 1.7× at TJ = 100 °C), supporting reliable operation in thermally demanding power converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	550 V - Supports 400 V DC bus designs with ≥25% margin against transients in industrial and telecom power supplies.
R_DS(on) Max	192 mΩ @ V_GS = 10 V, I_D = 8 A - Enables <1.5 W conduction loss at 10 A continuous, reducing heatsink requirements.
I_D Continuous	16 A @ T_C = 25 °C - Sustains full-load current in TO-220-mounted PFC boost stages without derating below 100 °C case temperature.
Q_g	31 nC - Reduces gate drive power and allows use of low-power drivers (e.g., 1–2 W peak) in high-frequency SMPS.
E_AS	210 mJ @ T_J = 25 °C - Withstands single-pulse inductive energy events common in motor drives and relay snubbing without failure.
t_rr	244 ns @ I_SD = 16 A, di/dt = 100 A/µs - Limits switching losses and EMI during freewheeling in bridge-leg configurations.
R_thJC	1.14 °C/W - Enables direct thermal coupling to heatsinks for efficient junction-to-case heat transfer in convection-cooled systems.

Pinout & Package

Package: TO-220 type A (standard through-hole, tab-is-drain configuration). Thermal pad (TAB) is electrically connected to Drain (D) and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal requiring ≤31 nC charge for full enhancement; sensitive to ESD (±25 V rating).
2 (D/TAB)	Drain / Heatsink Interface	Main high-voltage power terminal; electrically tied to metal tab for direct mounting to heatsink with isolation washer if needed.
3 (S)	Source	Power return node and reference for gate drive; carries full load current and defines local ground in low-side switch topology.

Key Features

Feature	Design Value
MDmesh M5 Process Integration	Combines vertical charge-balanced structure with horizontal PowerMESH layout to achieve 150 mΩ typ. R_DS(on) at 550 V rating.
100% Unclamped Avalanche Tested	Guarantees single-pulse ruggedness to 210 mJ, eliminating need for external snubbers in flyback or LLC resonant converters.
Low Crss / High Ciss Ratio	C_rss/C_iss ≈ 0.28% enables stable Miller plateau control and reduced risk of shoot-through in half-bridge topologies.
Fast Body Diode Recovery	244 ns t_rr and 2.8 µC Q_rr minimize commutation losses and voltage overshoot when used in synchronous rectification or bidirectional switches.
ECOPACK® Compliant Packaging	Meets RoHS and halogen-free requirements per ST's environmental grade definitions, suitable for green manufacturing programs.

Applications

Industrial SMPS

Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW telecom rectifier front-end with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched MOSFET operating at 70–100 kHz with zero-voltage switching assistance.

Use Value: Low R_DS(on) and gate charge reduce conduction and switching losses by >15% vs. legacy 600 V MOSFETs, improving system efficiency to >96%.

Use Scenario: Boost switch in universal-input (90–264 VAC) PFC circuit powering 48 V/50 A telecom shelf systems.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch handling 16 A peak current at 550 V blocking.

Use Value: Avalanche ruggedness and low Q_gd/Q_gs ratio ensure reliable turn-off under line surge and load transient conditions.

Motor Drive Inverters

UPS Output Stages

Use Scenario: Low-side switch in three-phase 3–5 HP inverter driving induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Fast-switching, high-current N-channel MOSFET in IGBT replacement topology with discrete gate driving.

Use Value: 64 A pulsed current rating and 1.14 °C/W R_thJC support short-duration overload without thermal runaway during motor stall events.

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 VAC sine wave to critical loads.

IC Role / Device Role / Timing Role: High-reliability power switch handling bidirectional current flow and reverse recovery stress during battery backup transitions.

Use Value: Integrated body diode with 295 ns t_rr at 150 °C ensures predictable commutation behavior across full operating temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW18N55M5	TO-247 package, identical electrical specs (550 V, 16 A, 192 mΩ), higher R_thJC (0.85 °C/W), larger footprint.	Better thermal performance in forced-air or liquid-cooled systems; unsuitable for space-constrained TO-220 layouts.	Select when thermal budget is tighter than PCB area constraints and heatsink interface permits TO-247 mounting.
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), CoolMOS C7 technology, lower Q_g (24 nC), but no avalanche rating.	Superior high-frequency efficiency in >200 kHz designs; requires external clamping for inductive energy absorption.	Prefer for high-frequency resonant converters where avalanche ruggedness is managed externally and gate drive power is critical.

Compared with STW18N55M5 and IPP60R190C7, STP18N55M5 offers optimal balance of TO-220 mechanical compatibility, guaranteed avalanche capability, and proven thermal performance in cost-sensitive industrial power supplies-making it the default choice for PFC and SMPS designs below 150 kHz.

Availability

STP18N55M5 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, motor drive inverters, and UPS output stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP18N55M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP18N55M5 belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial power conversion-emphasizing low R_DS(on), rugged avalanche performance, and fast body diode recovery.

FAQ

Is STP18N55M5 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (42 pF) and Crss (3.6 pF), combined with 150 mΩ R_DS(on), enable efficient ZVS operation in LLC resonant converters up to 300 kHz. The device's 15 V/ns dv/dt rating ensures reliable turn-off during high-slew-rate transitions without false triggering.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For 100 kHz hard-switching with V_GS = 10 V drive, RG ≤ 10 Ω is recommended to maintain td(v) ≤ 40 ns and minimize switching losses. At RG = 4.7 Ω, typical turn-on delay is 37 ns and crossing time is 10.3 ns, aligning with safe SOA limits per Figure 1.

Does STP18N55M5 require a negative gate voltage for reliable turn-off in bridge configurations?

No. With V_GS(th) = 3–5 V and low Miller capacitance (Crss = 3.6 pF), 0 V gate drive fully turns off the device. However, –5 V to –10 V is recommended in high-noise bridge legs to prevent spurious turn-on due to dv/dt coupling, especially above 400 V bus voltage.

Can STP18N55M5 replace STP16NF55 in existing designs?

Yes, with qualification. STP18N55M5 offers 192 mΩ R_DS(on) vs. 220 mΩ for STP16NF55, same TO-220 package and pinout, and improved avalanche rating (210 mJ vs. 120 mJ). Layout is drop-in compatible, but gate drive strength should be verified due to higher Q_g (31 nC vs. 25 nC).

STP18N55M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 192mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP18N55M5 FAQ

1.How can I place an order for STP18N55M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP18N55M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP18N55M5 reliable?

The price and inventory of STP18N55M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP18N55M5 is usually 5 days.

3.What payment methods are accepted for STP18N55M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP18N55M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP18N55M5?

STP18N55M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP18N55M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP18N55M5?

For technical support, including STP18N55M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP18N55M5 requirements.

6.How does Aetrix verify that STP18N55M5 is sourced from the original manufacturer or authorized distributors?

All STP18N55M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP18N55M5 meets industry standards.

7.What is the process for return or replacement of STP18N55M5?

All STP18N55M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP18N55M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP18N55M5 part is unused and in its original packaging.

Return procedure for STP18N55M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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