Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP18N60DM2

Name: STP18N60DM2
Brand: STMicroelectronics
SKU: STP18N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP18N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP18N60DM2.pdf

Description:: MOSFET N-CH 600V 12A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:880

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP18N60DM2 from STMicroelectronics is an N-channel 600 V, 12 A MDmesh™ DM2 Power MOSFET in TO-220 package, featuring 0.260 Ω typ. R_DS(on), 20 nC total gate charge, and fast-recovery body diode with 125 ns trr at 25 °C. It serves as a high-efficiency primary-side switch in ZVS phase-shift converters and bridge topologies for industrial SMPS.

For engineers reviewing the STP18N60DM2 datasheet, STP18N60DM2 pinout, STP18N60DM2 application, or STP18N60DM2 equivalent, key selection criteria include avalanche ruggedness (380 mJ), dv/dt immunity (50 V/ns), low C_iss (800 pF), and Zener-protected gate-critical for hard-switched and resonant converter reliability.

Technical Context

This device implements ST's MDmesh™ DM2 silicon architecture optimized for high-voltage switching with integrated fast-recovery body diode. Its 600 V V_(BR)DSS, 0.260 Ω R_DS(on) at V_GS = 10 V, and 125 ns trr enable high-frequency operation while maintaining low conduction and switching losses.

The MOSFET supports robust unclamped inductive switching with 2.5 A repetitive avalanche current and 380 mJ single-pulse energy rating. Its 5.6 Ω intrinsic gate resistance and 8.5 nC Q_gd contribute to controlled turn-off dynamics and reduced Miller-induced shoot-through risk in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands full-line transient surges in 400 V AC-input PFC and offline SMPS
R_DS(on) max	0.295 Ω - Limits conduction loss to ≤ 42.5 W at 12 A continuous drain current
Q_g	20 nC - Enables efficient 100–300 kHz switching with moderate gate driver power (e.g., 1–2 W @ 200 kHz)
trr	125 ns @ T_j = 25 °C - Reduces diode recovery loss and EMI in bridge-leg commutation
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during hard switching without spurious turn-on
Q_rr	680 nC @ T_j = 25 °C - Low reverse recovery charge minimizes cross-conduction loss in synchronous rectification
R_thj-case	1.39 °C/W - Allows 90 W dissipation at 25 °C case temperature; requires heatsink for >15 W continuous use

Pinout & Package

Delivered in TO-220 type A package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and ECOPACK® RoHS-compliant finish.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
G (Pin 1)	Gate	High-impedance control terminal; Zener-protected against ±25 V transients
S (Pin 3)	Source	Reference node for gate drive; carries full load current and diode return path

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 125 ns and Qrr = 680 nC enable zero-voltage switching in phase-shifted full-bridge converters
Extremely low gate charge	Qg = 20 nC reduces gate driver power demand and improves switching efficiency above 100 kHz
100% avalanche tested	Each unit validated for 380 mJ single-pulse energy, ensuring robustness in unclamped inductive loads
Zener-protected gate	Integrated gate-body Zener clamps ±25 V transients, eliminating need for external gate protection components

Applications

Industrial SMPS

Server PSU

Use Scenario: 3 kW telecom rectifier with active clamp forward topology operating at 150 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 600 V DC bus and 12 A peak current.

Use Value: Low R_DS(on) (0.260 Ω) cuts conduction loss by 35% vs. legacy 650 V MOSFETs; fast trr prevents shoot-through during clamp reset.

Use Scenario: 80 PLUS Titanium 1U server power supply using LLC resonant + synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver switch in high-side configuration.

Use Value: Zener-protected gate withstands 100 V/ns common-mode noise on isolated secondary; 1.39 °C/W R_thj-case enables compact heatsinking.

EV Onboard Charger

Induction Heating Inverter

Use Scenario: Bidirectional OBC stage converting 400 V battery to 400 V AC grid with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Boost switch in critical conduction mode (CrM) PFC front-end.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during line-voltage zero-crossing transitions; 0.295 Ω R_DS(on) max ensures <1.5% efficiency penalty at full load.

Use Scenario: 5 kW resonant inverter driving 20 kHz induction coil with variable load coupling.

IC Role / Device Role / Timing Role: Half-bridge leg switch subjected to high di/dt (≥400 A/µs) and repetitive avalanche stress.

Use Value: 2.5 A repetitive avalanche current rating and 380 mJ energy tolerance eliminate snubber requirements; fast trr suppresses voltage spikes during forced commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 0.190 Ω R_DS(on), 33 nC Q_g, no integrated fast diode	Higher conduction efficiency but requires external anti-parallel SiC Schottky for ZVS; unsuitable for hard-switched bridge legs	Select only when gate drive capability supports higher Q_g and external diode integration is acceptable
STW20N60DM2	Same MDmesh™ DM2 process, TO-247 package, 20 A ID, 0.220 Ω R_DS(on), identical trr/Qrr	Higher current rating and lower R_DS(on) but larger footprint and higher cost; same thermal interface constraints	Choose when >12 A continuous current or improved thermal margin is required without changing layout

Compared with IPP60R190C7 and STW20N60DM2, the STP18N60DM2 offers optimal balance of low gate charge (20 nC), fast diode recovery (125 ns), and TO-220 mechanical compatibility-making it preferred for space-constrained, medium-power ZVS converters where integrated diode performance is critical.

Availability

STP18N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU, EV onboard chargers, and induction heating inverters requiring stable component supply and long-term production continuity.

Supply support for STP18N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh™ DM2 product line targets high-efficiency, high-frequency power conversion systems-specifically engineered to replace older planar MOSFETs in PFC, resonant converters, and motor drives with superior R_DS(on)/Q_g trade-offs and integrated fast diodes.

FAQ

Is STP18N60DM2 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its 125 ns trr, 680 nC Qrr, and 50 V/ns dv/dt ruggedness make it specifically qualified for ZVS phase-shift full-bridge and LLC resonant converters. The fast-recovery body diode ensures reliable soft commutation without external diode supplementation, reducing component count and layout complexity in high-efficiency designs.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 7.6 A at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the 1.39 °C/W junction-to-case resistance and 150 °C maximum junction temperature, requiring appropriate heatsinking for sustained operation above ambient.

Does STP18N60DM2 require external gate protection?

No. The device integrates a Zener diode between gate and source, rated for ±25 V, providing inherent protection against electrostatic discharge and gate overvoltage transients. External gate resistors (e.g., 4.7 Ω) are still recommended for switching speed control and ringing suppression, but discrete TVS or Zener clamps are unnecessary.

Can STP18N60DM2 replace STP16NF60 in existing designs?

Yes, with design validation. STP18N60DM2 offers lower R_DS(on) (0.260 Ω vs. 0.320 Ω), faster trr (125 ns vs. 250 ns), and higher avalanche energy (380 mJ vs. 250 mJ). However, its 20 nC Q_g is slightly higher than STP16NF60's 18 nC, so gate driver strength and layout parasitics must be verified to maintain timing integrity.

STP18N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP18N60DM2 FAQ

1.How can I place an order for STP18N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP18N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP18N60DM2 reliable?

The price and inventory of STP18N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP18N60DM2 is usually 5 days.

3.What payment methods are accepted for STP18N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP18N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP18N60DM2?

STP18N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP18N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP18N60DM2?

For technical support, including STP18N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP18N60DM2 requirements.

6.How does Aetrix verify that STP18N60DM2 is sourced from the original manufacturer or authorized distributors?

All STP18N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP18N60DM2 meets industry standards.

7.What is the process for return or replacement of STP18N60DM2?

All STP18N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STP18N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP18N60DM2 part is unused and in its original packaging.

Return procedure for STP18N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…