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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP18N65M2

Name: STP18N65M2
Brand: STMicroelectronics
SKU: STP18N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP18N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP18N65M2.pdf

Description:: MOSFET N-CH 650V 12A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,003

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Product details

Overview

STP18N65M2 from STMicroelectronics is an N-channel 650 V, 12 A Power MOSFET in TO-220 package, fabricated with MDmesh M2 technology. It delivers 275 mΩ typical R_DS(on), 20 nC total gate charge, and 35 pF output capacitance (C_oss), enabling high-efficiency hard-switched PFC and LLC resonant converters in industrial SMPS.

For engineers reviewing the STP18N65M2 datasheet, STP18N65M2 pinout, STP18N65M2 application, or STP18N65M2 equivalent, key selection criteria include avalanche ruggedness (450 mJ E_AS), dv/dt immunity (50 V/ns), Zener-protected gate, and optimized C_oss profile for soft-recovery in bridge-leg configurations.

Technical Context

This MOSFET employs a strip-based MDmesh M2 vertical structure to minimize conduction loss while maintaining fast switching. Its low Q_gd/Q_g ratio (8.5 nC / 20 nC) supports clean turn-off with reduced Miller-induced shoot-through risk in half-bridge topologies.

The device integrates a robust body diode with 331 ns reverse recovery time (T_J = 25 °C) and 3.4 µC Q_rr, and is 100% tested for unclamped inductive switching at I_AR = 2 A - critical for flyback and active clamp forward designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥30% voltage margin for surge and ringing
R_DS(on) typ.	275 mΩ at V_GS = 10 V, I_D = 6 A - enables <1.7 W conduction loss at 12 A continuous drain current
Q_g	20 nC - reduces gate drive power and allows use of low-power drivers like STGAP2SIC
C_oss	35 pF at V_DS = 100 V - minimizes capacitive turn-on loss and improves light-load efficiency
E_AS	450 mJ - ensures reliable operation under single-pulse inductive fault conditions without derating
T_J max	150 °C - permits operation in sealed enclosures up to 85 °C ambient with standard heatsinking
dv/dt ruggedness	50 V/ns - prevents false turn-on during high-speed switching in high-noise motor drive inverters

Pinout & Package

TO-220 package (Type A) with isolated tab; metal tab is Drain (D), Pin 1 is Gate (G), Pin 3 is Source (S). Thermal resistance R_thJC = 1.14 °C/W enables 110 W dissipation at T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal; requires ≤±25 V bias; Zener-protected against ESD and overvoltage
Pin 3 (S)	Source	Reference node for gate drive; connects to power ground or floating source in high-side configuration
Tab (D)	Drain	High-voltage power terminal; electrically isolated from mounting surface per TO-220 Type A mechanical spec

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × area by 25% vs prior-generation superjunction MOSFETs at same voltage rating
Optimized C_oss profile	C_oss remains stable across 0–480 V, enabling predictable ZVS transition timing in resonant converters
Zener-protected gate	Integrated 25 V gate-body Zener clamps transients without external TVS, simplifying gate driver design
100% avalanche tested	Each unit validated for E_AS ≥ 450 mJ - eliminates need for system-level derating in inductive load applications
Low Q_gd/Q_g ratio	0.425 (8.5/20 nC) - suppresses Miller plateau duration, improving controllability in synchronous rectification

Applications

Industrial SMPS

Server PSU

Use Scenario: 3.3 kW telecom rectifier with interleaved PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: Main switch in boost PFC cell; handles 12 A RMS input current with 650 V blocking.

Use Value: Low C_oss and 50 V/ns dv/dt rating prevent spurious turn-on during zero-current switching transitions.

Use Scenario: High-density 1U server power supply using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch in primary-side HB converter; switched at 250 kHz with 50% duty cycle.

Use Value: 275 mΩ R_DS(on) and 20 nC Q_g reduce both conduction and switching losses, improving full-load efficiency to >96%.

Solar Microinverter

Motor Drive Inverter

Use Scenario: 300 W single-phase microinverter with transformerless H5 topology.

IC Role / Device Role / Timing Role: DC-link switch handling bidirectional current; subjected to repetitive unclamped inductive stress.

Use Value: 450 mJ E_AS rating and 100% avalanche testing ensure reliability under partial shading fault conditions.

Use Scenario: 1.5 kW BLDC inverter for HVAC compressor with 120° trapezoidal commutation.

IC Role / Device Role / Timing Role: Phase-leg high-side switch; experiences 400 V bus transients during PWM dead-time.

Use Value: Zener-protected gate withstands ±25 V transients without external clamping, reducing BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW18N65M2	Same die, but in TO-247 package; R_thJC = 0.55 °C/W vs 1.14 °C/W	Better thermal performance for >15 A continuous operation; larger footprint and higher cost	Select when junction temperature must stay below 125 °C at 15 A continuous with forced air cooling
IPP65R280C7	Infineon CoolMOS C7; 280 mΩ R_DS(on), 19 nC Q_g, no integrated Zener protection	Lower gate charge but requires external gate protection; different SOA curve limits peak pulse current	Prefer when gate driver has built-in clamping and design prioritizes minimal Q_g over ruggedness

Compared with STW18N65M2 and IPP65R280C7, STP18N65M2 offers optimal balance of thermal capability (TO-220), integrated gate protection, and proven avalanche robustness - making it ideal for cost-sensitive, space-constrained industrial power supplies where reliability under transient stress is non-negotiable.

Availability

STP18N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, solar microinverters, and motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for STP18N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP18N65M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10572. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is required for controlled switching speed and EMI management. The datasheet recommends R_G = 4.7 Ω for resistive load switching characterization; actual value depends on drive strength, layout parasitics, and target dV/dt - typically 5–22 Ω for 100–250 kHz operation.

Is the body diode suitable for synchronous rectification?

No - the body diode has 331 ns t_rr and 3.4 µC Q_rr at 25 °C, making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling in hard-switched topologies, not zero-voltage switching in SR configurations.

Can STP18N65M2 replace STP16NF60 in existing designs?

Not directly - STP16NF60 is a 600 V, 16 A, 0.3 Ω device with different SOA, gate threshold (2–4 V vs 3–5 V), and no Zener protection. While voltage rating is compatible, the STP18N65M2's lower R_DS(on) and enhanced ruggedness improve efficiency but may require gate drive re-tuning due to differing Q_g and C_iss.

STP18N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP18N65M2 FAQ

1.How can I place an order for STP18N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP18N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP18N65M2 reliable?

The price and inventory of STP18N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP18N65M2 is usually 5 days.

3.What payment methods are accepted for STP18N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP18N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP18N65M2?

STP18N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP18N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP18N65M2?

For technical support, including STP18N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP18N65M2 requirements.

6.How does Aetrix verify that STP18N65M2 is sourced from the original manufacturer or authorized distributors?

All STP18N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP18N65M2 meets industry standards.

7.What is the process for return or replacement of STP18N65M2?

All STP18N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP18N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP18N65M2 part is unused and in its original packaging.

Return procedure for STP18N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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