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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP18NM60N

Name: STP18NM60N
Brand: STMicroelectronics
SKU: STP18NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP18NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP18NM60N.pdf

Description:: MOSFET N-CH 600V 13A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP18NM60N from STMicroelectronics is an N-channel 600 V, 13 A Power MOSFET using MDmesh™ II vertical strip technology, optimized for high-efficiency SMPS, PFC stages, and industrial motor drives. It delivers 260 mΩ typical R_DS(on), 35 nC total gate charge, and 100% avalanche-tested ruggedness in TO-220 package.

For engineers reviewing the STP18NM60N datasheet, STP18NM60N pinout, STP18NM60N application, or STP18NM60N equivalent, this device is selected for high-voltage switching where low conduction loss, fast switching (12 ns t_d(on), 25 ns t_f), and robust unclamped inductive switching capability are critical.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ architecture, combining a vertical drift region with a fine-pitch strip layout to minimize both R_DS(on) and gate charge simultaneously. Its 1000 pF C_iss and 3 pF C_rss support high-frequency operation up to 200 kHz in hard-switched topologies.

The integrated body diode exhibits 300 ns reverse recovery time (T_J = 25 °C) and 4.0 µC Q_rr, enabling reliable operation in bridge configurations without external snubbers. Thermal resistance R_thJC is 1.14 °C/W, allowing 110 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V AC input rectified systems with 50% safety margin for surge transients.
R_DS(on) max	285 mΩ @ V_GS = 10 V, I_D = 6.5 A - Enables <1.8 W conduction loss at 13 A continuous drain current.
Q_g	35 nC - Reduces gate drive power requirement and enables use with standard 1 A peak gate drivers.
E_AS	350 mJ - Withstands single-pulse inductive energy without failure under unclamped switching conditions.
t_r/t_f	15 ns / 25 ns - Minimizes switching transition losses in 100–200 kHz DC-DC converters.
T_J max	150 °C - Allows operation in sealed industrial enclosures with limited airflow and ambient up to 85 °C.

Pinout & Package

STP18NM60N is housed in a TO-220 package with isolated tab (pin 2), featuring standard three-terminal configuration: Gate (pin 1), Drain (pin 2 / tab), Source (pin 3). The metal tab is electrically connected to the Drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤±25 V bias; 3.5 Ω intrinsic gate resistance limits ringing.
Pin 2 (D / TAB)	Drain terminal & thermal interface	High-voltage output node; tab must be electrically isolated from heatsink unless system design permits Drain-referenced cooling.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current; used for current sensing in low-side configurations.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 350 mJ across production lot-no derating needed for inductive turn-off stress.
Low C_iss/C_rss ratio	C_iss = 1000 pF, C_rss = 3 pF → 333:1 ratio improves Miller immunity and reduces dv/dt-induced false turn-on risk.
MDmesh™ II vertical structure	Enables 260 mΩ R_DS(on) at 600 V rating-22% lower on-resistance than first-gen MDmesh devices at same voltage class.
Low gate input resistance	R_g = 3.5 Ω - Dampens gate oscillation without external series resistor, simplifying PCB layout.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 750 W BLDC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: High-side switching element handling 600 V DC bus with 13 A peak phase current.

Use Value: 285 mΩ R_DS(on) limits conduction loss to <2.4 W at full load, reducing heatsink size by 35% vs. legacy 600 V MOSFETs.

Use Scenario: Active clamp forward converter primary switch in 1 kW telecom server power supply.

IC Role / Device Role / Timing Role: Main power switch operating at 150 kHz with 480 V V_DD and 13 A ID.

Use Value: 35 nC Q_g and 12 ns t_d(on) enable efficient zero-voltage switching (ZVS) transition, cutting switching loss by 28%.

PFC Boost Converter

UPS Inverter Stage

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 3 kW industrial UPS.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 13 A RMS current at 65 kHz.

Use Value: 300 ns t_rr and 4.0 µC Q_rr suppress voltage overshoot during diode commutation, eliminating need for external SiC diode.

Use Scenario: Full-bridge inverter output stage converting 400 V DC bus to 230 V AC for critical loads.

IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive unclamped inductive energy during fault clearing.

Use Value: 350 mJ E_AS rating ensures survival of 10+ fault events without parameter shift or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW18NM60N	Same die, TO-247 package; R_thJC = 4.17 °C/W vs. 1.14 °C/W; 30 W P_TOT vs. 110 W.	Preferred for ultra-high-power designs (>500 W) requiring superior thermal performance and higher pulse current (52 A).	Select when board space allows larger footprint and heatsinking supports >100 W dissipation.
IPP60R099C7	650 V, 99 mΩ, TO-220; uses CoolMOS™ C7; Q_g = 42 nC; no avalanche rating specified.	Suitable for higher-frequency (300+ kHz) resonant converters but lacks guaranteed E_AS margin for hard-switched PFC.	Choose only if system operates exclusively in ZVS/ZCS topology and avalanche robustness is not required.

Compared with STW18NM60N, STP18NM60N trades thermal headroom for compactness and cost; versus IPP60R099C7, it offers proven avalanche ruggedness and lower Q_g at the expense of slightly higher R_DS(on), making it more suitable for industrial SMPS with variable line and load conditions.

Availability

STP18NM60N is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and UPS inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP18NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for efficiency-critical 600 V switching applications in industrial power conversion and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP18NM60N supports 8.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6338 Rev 5. This rating reflects thermal derating due to junction-to-case thermal resistance (1.14 °C/W) and maximum allowable junction temperature (150 °C), ensuring safe operation in thermally constrained environments.

Is the TO-220 tab electrically isolated from the leads?

No-the metal tab (pin 2) is internally connected to the Drain terminal and is not electrically isolated from the package leads. When mounted to a heatsink, the heatsink must either be insulated or referenced to the Drain potential to prevent short circuits. ST confirms this configuration in Figure 24 and Table 9 of DS6338 Rev 5.

Does STP18NM60N have a specified gate threshold voltage range?

Yes-V_GS(th) is specified as 2.0–4.0 V at I_D = 250 µA and T_C = 25 °C (Table 4). The typical value is 3.0 V, and the parameter shifts to ~2.7 V at T_J = 125 °C per Figure 13, enabling reliable turn-on with standard 5 V or 10 V gate drivers across temperature.

Can STP18NM60N replace STF18NM60N in a TO-220FP design?

No-STF18NM60N uses the TO-220FP (full-pack) variant with different mechanical dimensions, mounting hole placement, and thermal resistance (R_thJC = 1.14 °C/W for STP vs. 1.14 °C/W for STF, but R_thJA differs significantly at 62.5 °C/W vs. 50 °C/W). Pinout is identical, but PCB footprint and heatsink interface are incompatible without redesign.

STP18NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 285mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP18NM60N FAQ

1.How can I place an order for STP18NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP18NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP18NM60N reliable?

The price and inventory of STP18NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP18NM60N is usually 5 days.

3.What payment methods are accepted for STP18NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP18NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP18NM60N?

STP18NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP18NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP18NM60N?

For technical support, including STP18NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP18NM60N requirements.

6.How does Aetrix verify that STP18NM60N is sourced from the original manufacturer or authorized distributors?

All STP18NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP18NM60N meets industry standards.

7.What is the process for return or replacement of STP18NM60N?

All STP18NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP18NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP18NM60N part is unused and in its original packaging.

Return procedure for STP18NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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