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STMicroelectronics STP18NM80
- Part No.:
- STP18NM80
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP18NM80.pdf
- Description:
- MOSFET N-CH 800V 17A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:990
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Product details
Overview
STP18NM80 from STMicroelectronics is an N-channel 800 V, 295 mΩ (max), 17 A Power MOSFET in TO-220 package, built on MDmesh™ technology for high-voltage switching. It delivers low gate charge (70 nC), high dv/dt immunity, and 100% avalanche-tested ruggedness-enabling reliable operation in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STP18NM80 datasheet, STP18NM80 pinout, STP18NM80 application, or STP18NM80 equivalent, key selection criteria include its 800 V VDS, 250 mΩ typ. RDS(on), 68 A pulsed drain current, 190 W power dissipation at TC = 25 °C, and 600 mJ single-pulse avalanche energy-critical for hard-switched high-voltage topologies.
Technical Context
This device uses ST's MDmesh™ multi-drain process with PowerMESH horizontal layout to achieve ultra-low RDS(on) while maintaining high breakdown voltage. Its 2070 pF input capacitance and 29 pF reverse transfer capacitance support fast, controlled switching under 640 V bus conditions.
The integrated body diode features 1.6 V forward voltage at 17 A and 618 ns reverse recovery time (TJ = 25 °C), enabling efficient freewheeling in flyback and resonant converters. Thermal resistance of 3.13 °C/W (junction-to-case) ensures effective heat transfer when mounted on standard heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems without derating. |
| RDS(on) max | 295 mΩ at VGS = 10 V, ID = 8.5 A - Limits conduction loss to ≤2.5 W at 10 A DC, supporting thermally constrained designs. |
| ID cont @ TC = 25 °C | 17 A - Sustains continuous load current in high-efficiency 300–500 W SMPS without forced airflow. |
| Qg | 70 nC - Enables <50 ns turn-on delay and 28 ns rise time with 4.7 Ω gate resistor, reducing switching loss at 100 kHz. |
| EAS | 600 mJ - Absorbs unclamped inductive energy during fault events, eliminating need for external snubbers in relay/motor drive circuits. |
| RthJC | 3.13 °C/W - Allows junction temperature rise of only ~32 °C at 10 W dissipation, simplifying thermal design with standard TO-220 heatsinks. |
Pinout & Package
STP18NM80 is housed in a through-hole TO-220 package with isolated tab (non-conductive mounting option). The case is electrically connected to the Drain terminal, requiring insulating hardware when mounted to grounded heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance control input; requires ≤±30 V drive and low-inductance routing to minimize ringing during 70 nC charge/discharge. |
| 2 (Center) | Drain (D) | Main high-voltage power path; electrically tied to metal tab-must be insulated from chassis if heatsink is grounded. |
| 3 (Right) | Source (S) | Power return and reference node for gate drive; connects to PCB ground plane with low-inductance layout to sustain 68 A pulsed current. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ super-junction architecture | Enables 800 V rating with 250 mΩ typ. RDS(on), reducing conduction loss by >35% vs. planar MOSFETs at same voltage class. |
| 100% unclamped avalanche rated | Guarantees robustness against inductive kickback up to 600 mJ without parameter drift-eliminates need for external clamping in PFC boost diodes. |
| Low Ciss/Crss ratio (71:1) | Improves Miller immunity and enables stable operation with high dv/dt (>50 V/ns) in bridge configurations without false turn-on. |
| Optimized body diode recovery | 618 ns trr and 9.6 µC Qrr reduce switching loss and EMI in discontinuous-mode flyback converters. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge IGBT gate driver stage in 1–3 kW variable-frequency drives. IC Role / Device Role / Timing Role: High-side switch controlling DC bus connection to motor phase winding during PWM commutation. Use Value: 800 V rating withstands reflected spikes from 400 V DC bus; 68 A pulsed current supports 2× overload torque without desaturation. |
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1U server PSUs. IC Role / Device Role / Timing Role: Main power switch handling 380–400 V DC input with zero-voltage switching transitions. Use Value: Low 70 nC Qg minimizes gate drive loss at 300–500 kHz; 295 mΩ RDS(on) maintains >95% efficiency at full load. |
| EV Onboard Charger (OBC) | Industrial UPS Inverter Stage |
|
Use Scenario: Boost PFC switch in bidirectional OBC modules accepting 208–480 VAC three-phase input. IC Role / Device Role / Timing Role: Fast-switching power transistor regulating input current waveform and boosting DC link to 800 V. Use Value: Avalanche ruggedness absorbs line transients during grid faults; 150 °C max TJ supports compact heatsink integration in sealed enclosures. |
Use Scenario: Full-bridge inverter output stage converting 400 V DC to 230 V AC in 5–10 kVA industrial UPS systems. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 16.7 kHz (50 Hz fundamental) with 100% duty-cycle capability. Use Value: 190 W TC = 25 °C power rating allows parallel operation without active cooling; TO-220 mechanical robustness sustains vibration environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW18NM80 | Same die, TO-247 package; RthJC = 0.66 °C/W vs. 3.13 °C/W (TO-220); higher PTOT = 190 W (same rating but better thermal path). | Better suited for high-power density designs where heatsink interface resistance dominates; requires larger PCB footprint. | Select when thermal budget is tight and board space permits TO-247 mounting. |
| IPP60R190C7 | 650 V rating, 190 mΩ RDS(on), 70 nC Qg; CoolMOS™ P7 technology; lower VDS limits use to ≤380 V DC bus. | Optimized for 380 V DC systems (e.g., telecom rectifiers); not suitable for universal-input offline SMPS with 800 V stress. | Choose only for 650 V-class designs where lower RDS(on) justifies reduced voltage margin. |
Compared with STW18NM80, STP18NM80 trades thermal performance for compact through-hole assembly; versus IPP60R190C7, it provides critical 800 V headroom for global mains compatibility but with higher conduction loss at 400 V DC.
Availability
STP18NM80 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and industrial UPS inverters requiring stable component supply across multi-year production cycles.
Supply support for STP18NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STP18NM80 belongs to the MDmesh™ high-voltage Power MOSFET product line, engineered specifically for energy-efficient, high-reliability switching in offline AC-DC conversion and industrial power control systems.
FAQ
What is the maximum safe operating voltage for STP18NM80 in continuous conduction?
The absolute maximum drain-source voltage (VDS) is 800 V, and this rating applies under all operating conditions including transient overvoltage. ST specifies 100% avalanche testing at rated current, confirming robustness against short-duration surges up to 800 V without degradation. Designers must maintain ≥20% voltage margin (i.e., ≤640 V DC bus) for long-term reliability per IEC 62368-1.
Can STP18NM80 be used in synchronous rectification topologies?
No-STP18NM80 is optimized as a high-side or low-side switch, not a synchronous rectifier. Its body diode has 1.6 V forward voltage and 618 ns reverse recovery time, which is too slow and lossy for SR operation above 50 kHz. Dedicated low-VF, fast-recovery MOSFETs like STP16NF06L are recommended for SR stages.
Is the TO-220 package of STP18NM80 electrically isolated?
No-the metal tab is internally connected to the Drain terminal. Electrical isolation requires insulating hardware (e.g., silicone washer + shoulder washer) and non-conductive thermal compound when mounting to a grounded heatsink. ST does not offer a fully isolated TO-220 variant of this part number.
How does STP18NM80's avalanche rating compare to STW18NM80?
Both share identical die and 600 mJ single-pulse avalanche energy (EAS) rating. However, STW18NM80's TO-247 package achieves lower junction-to-case thermal resistance (0.66 °C/W vs. 3.13 °C/W), allowing faster heat extraction during repetitive avalanche events-making it preferable for high-duty-cycle fault conditions.
STP18NM80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 295mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2070 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP18NM80 FAQ
1.How can I place an order for STP18NM80 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP18NM80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP18NM80 reliable?
The price and inventory of STP18NM80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP18NM80 is usually 5 days.
3.What payment methods are accepted for STP18NM80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP18NM80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP18NM80?
STP18NM80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP18NM80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP18NM80?
For technical support, including STP18NM80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP18NM80 requirements.
6.How does Aetrix verify that STP18NM80 is sourced from the original manufacturer or authorized distributors?
All STP18NM80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP18NM80 meets industry standards.
7.What is the process for return or replacement of STP18NM80?
All STP18NM80 units undergo pre-shipment inspection (PSI). If there is an issue with STP18NM80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP18NM80 part is unused and in its original packaging.
Return procedure for STP18NM80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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