STMicroelectronics STP190N55LF3

Overview

STP190N55LF3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 55 V drain-source voltage, 2.9 mΩ typical R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features logic-level gate drive (V_GS(th) = 1–2.5 V), 100% avalanche tested ruggedness, and is optimized for high-efficiency automotive switching applications including DC-DC converters and motor control.

For engineers reviewing the STP190N55LF3 datasheet, STP190N55LF3 pinout, STP190N55LF3 application, or STP190N55LF3 equivalent, key selection criteria include its low on-resistance at 5 V gate drive, 1000 mJ single-pulse avalanche energy rating, thermal resistance of 0.48 °C/W (junction-to-case), and TO-220 mechanical compatibility with standard heatsink mounting.

Technical Context

This device employs ST's "single feature size" strip-based STripFET™ process, enabling high cell density and reduced critical alignment steps-directly yielding low R_DS(on), low gate charge (Q_g = 60–80 nC), and robust unclamped inductive switching capability. Its logic-level gate threshold (1–2.5 V) allows direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The MOSFET supports pulsed drain currents up to 480 A and exhibits fast switching performance: t_d(on) = 20 ns, t_r = 40 ns, t_d(off) = 160 ns, t_f = 40 ns (R_G = 4.7 Ω). Its integrated source-drain diode has t_rr = 50–90 ns and Q_rr = 3.6 nC under specified conditions, supporting synchronous rectification and flyback recovery.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin configuration. Mounting hole accommodates M3 screw; tab electrically connected to Drain for direct heatsink coupling and minimal thermal resistance path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and IXTH120N55L2, STP190N55LF3 uniquely balances logic-level drive, TO-220 form factor, and 2.9 mΩ conduction loss-making it optimal for automotive and industrial designs where MCU integration, board space, and thermal constraints intersect.

Availability

STP190N55LF3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial 48 V power conversion, and EV charging infrastructure requiring stable component supply and long-term manufacturability.

Supply support for STP190N55LF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, power transistors, and microcontrollers for automotive, industrial, and consumer markets.

The STripFET™ Power MOSFET product line targets high-efficiency, high-reliability switching in automotive and industrial power systems-emphasizing low R_DS(on), rugged avalanche capability, and logic-level compatibility for simplified system integration.

FAQ

Is STP190N55LF3 suitable for use in high-frequency switching applications above 100 kHz?

Yes-its low gate charge (60–80 nC) and fast switching times (t_d(on) = 20 ns, t_f = 40 ns) support efficient operation up to 250 kHz in hard-switched topologies. However, layout parasitics and gate driver strength become critical above 100 kHz; recommended gate resistor is 4.7 Ω for balanced speed and ringing suppression.

Does STP190N55LF3 require a heatsink in continuous 120 A operation?

Yes-continuous 120 A operation at T_C = 25 °C requires a heatsink capable of dissipating 312 W with ≤0.48 °C/W thermal resistance. Without active cooling, junction temperature will exceed 175 °C within seconds. For intermittent duty cycles (<10% DC), natural convection may suffice depending on ambient and enclosure airflow.

Can STP190N55LF3 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 11) ensures inherent current sharing stability. Use matched gate resistors (≤1 Ω difference), symmetrical PCB layout, and Kelvin-source connections to minimize imbalance. Derate total current by 15% for thermal margin in paralleled setups.

What is the maximum safe operating voltage for unclamped inductive switching?

The device is rated for 1000 mJ single-pulse avalanche energy at V_DD = 40 V and I_D = 60 A. For safe unclamped operation, peak V_DS must remain ≤55 V (V_BRDSS), and energy must stay below E_AS limit. At 55 V, maximum sustainable avalanche current is ~60 A for ≤16.5 µs pulse width-verified per Figure 2 SOA curves.