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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP19NB20

Name: STP19NB20
Brand: STMicroelectronics
SKU: STP19NB20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP19NB20

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP19NB20.pdf

Description:: MOSFET N-CH 200V 19A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,265

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Product details

Overview

STP19NB20 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™ MOSFET rated for 200 V drain-source voltage, 19 A continuous drain current at T_C = 25 °C, and 0.15 Ω typical R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, 5.5 V/ns dv/dt capability, and is packaged in TO-220 for high-current switching in offline SMPS and telecom DC–AC converters.

For engineers reviewing the STP19NB20 datasheet, STP19NB20 pinout, STP19NB20 application, or STP19NB20 equivalent, this device supports high-speed power conversion with verified unclamped inductive switching performance, low gate charge (29–40 nC), and robust thermal resistance (1.0 °C/W junction-to-case) - critical for industrial and telecom power stage design.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process and strip layout architecture to achieve minimal R_DS(on) per die area and superior avalanche energy handling (E_AS = 580 mJ). Its edge termination structure enables stable operation under extreme dv/dt stress up to 5.5 V/ns without parasitic turn-on.

The device operates with a gate threshold voltage of 3–5 V and delivers 3 S forward transconductance at 9.5 A. Its dynamic characteristics include 15 ns turn-on delay, 10 ns off-voltage rise time, and 210 ns reverse recovery time in source-drain diode conduction - optimized for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands full mains-referenced DC bus in 115/230 VAC offline SMPS without derating.
R_DS(on) typ.	0.15 Ω at V_GS = 10 V, I_D = 9.5 A - Enables <1.4 W conduction loss at 19 A, reducing heatsink requirements.
I_D cont.	19 A at T_C = 25 °C - Supports high-current primary-side switching in 300–500 W power supplies.
Q_g	29–40 nC - Low gate drive power demand, compatible with standard PWM controllers like UC384x.
E_AS	580 mJ - Sustains repetitive unclamped inductive switching events without failure in flyback or forward converters.
dv/dt capability	5.5 V/ns - Prevents false triggering during fast voltage transients in high-noise industrial environments.
R_thj-case	1.0 °C/W - Allows direct mounting to heatsink for thermal management in compact TO-220 layouts.

Pinout & Package

STP19NB20 is housed in a through-hole TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate	Control input requiring ≤±30 V rating; low capacitance (C_iss = 1000 pF) minimizes driver loading.
Pin 2 (Middle)	Drain	Main high-voltage power path; connected to metal tab - requires insulated mounting for floating applications.
Pin 3 (Right)	Source	Power return reference; ties to ground or low-side switch node; carries full load current (19 A).

Key Features

Feature	Design Value
PowerMESH™ process	Delivers lowest R_DS(on)/area among 200 V MOSFETs, enabling smaller die size without sacrificing current rating.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 580 mJ and repetitive I_AR ≥ 19 A - eliminates need for external snubbers in inductive loads.
Minimized gate charge	Q_g = 29–40 nC reduces switching losses and eases gate driver selection for 100–500 kHz operation.
High dv/dt immunity	Rated 5.5 V/ns - suppresses spurious turn-on during fast voltage transitions in high-frequency SMPS designs.
Source-drain diode	V_SD = 1.5 V at I_SD = 19 A, t_rr = 210 ns - supports synchronous rectification or freewheeling in half-bridge configurations.

Applications

Telecom DC–AC Inverters

Industrial Offline SMPS

Use Scenario: 48 VDC input to 230 VAC output inverters for telecom base station backup systems.

IC Role / Device Role / Timing Role: High-side switching element in full-bridge topology operating at 20–50 kHz with unclamped inductive stress.

Use Value: 580 mJ avalanche energy rating ensures reliable operation during load dump or short-circuit events without desaturation protection.

Use Scenario: Primary-side switch in 350 W open-frame AC–DC power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM) flyback converter with 100 kHz switching frequency.

Use Value: 0.15 Ω R_DS(on) limits conduction loss to <1.4 W at full load, enabling natural convection cooling.

Consumer Audio Amplifier PSUs

UPS Battery Charger Stages

Use Scenario: High-efficiency Class-D amplifier power supply with active PFC front-end and LLC resonant output stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC circuit operating at 65 kHz.

Use Value: Low Q_gd/Q_gs ratio (13 nC / 9.5 nC) improves zero-voltage switching margin and reduces EMI generation.

Use Scenario: Bidirectional DC–DC stage in 120 VDC battery charger for 3-phase UPS systems.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter with body-diode commutation.

Use Value: 210 ns reverse recovery time and 14.5 A peak I_RRM support efficient soft-recovery during phase-shift transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP260N	R_DS(on) = 0.04 Ω lower (0.11 Ω), but E_AS = 470 mJ and dv/dt = 4.0 V/ns - less rugged under unclamped inductive stress.	Preferred in low-loss, low-noise audio PSUs where avalanche margin is secondary to conduction efficiency.	Select when lower R_DS(on) outweighs need for 5.5 V/ns dv/dt immunity and 580 mJ E_AS.
STP20NF20	Same 200 V rating and TO-220 package, but R_DS(on) = 0.18 Ω and Q_g = 45 nC - higher conduction and switching losses.	Suitable for cost-sensitive industrial motor drives where moderate switching frequency (<60 kHz) is used.	Choose only if STP19NB20 is unavailable and system thermal budget allows +0.3 Ω R_DS(on) penalty.

Compared with IRFP260N and STP20NF20, STP19NB20 uniquely balances low R_DS(on), high avalanche energy, and extreme dv/dt immunity - making it optimal for telecom and industrial SMPS where reliability under transient stress is non-negotiable.

Availability

STP19NB20 is available at Aetrix Electronics and suitable for telecom inverters, industrial offline SMPS, consumer audio power supplies, and UPS battery charger stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STP19NB20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline power conversion systems demanding high avalanche tolerance and fast dynamic response.

FAQ

What is the maximum safe operating temperature for STP19NB20?

The absolute maximum junction temperature is 150 °C, with derating beginning at T_C = 25 °C. At case temperatures above 25 °C, power dissipation must be reduced linearly using the 1.0 °C/W thermal resistance. Continuous operation beyond 150 °C risks irreversible parametric shift and bond-wire failure.

Can STP19NB20 be used in synchronous rectification?

Yes - its integrated source-drain diode has V_SD = 1.5 V at 19 A and t_rr = 210 ns at 150 °C, enabling use as a freewheeling or synchronous rectifier in LLC and phase-shifted full-bridge topologies. However, external synchronous MOSFETs are preferred for >95% efficiency targets due to lower V_SD.

Is STP19NB20 RoHS compliant?

Yes - STP19NB20 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free TO-220 packaging and halogen-free molding compound are standard; no exemptions apply per ST's official compliance documentation dated 2002 onward.

Does STP19NB20 require a gate resistor for stability?

Yes - a 4.7 Ω gate resistor is specified in the datasheet for switching time measurements and EMI control. Without it, ringing and overshoot may occur due to PCB trace inductance interacting with C_iss (1000 pF) and gate driver output impedance, risking false turn-on or shoot-through in bridge configurations.

STP19NB20 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP19NB20 FAQ

1.How can I place an order for STP19NB20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP19NB20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP19NB20 reliable?

The price and inventory of STP19NB20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP19NB20 is usually 5 days.

3.What payment methods are accepted for STP19NB20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP19NB20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP19NB20?

STP19NB20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP19NB20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP19NB20?

For technical support, including STP19NB20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP19NB20 requirements.

6.How does Aetrix verify that STP19NB20 is sourced from the original manufacturer or authorized distributors?

All STP19NB20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP19NB20 meets industry standards.

7.What is the process for return or replacement of STP19NB20?

All STP19NB20 units undergo pre-shipment inspection (PSI). If there is an issue with STP19NB20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP19NB20 part is unused and in its original packaging.

Return procedure for STP19NB20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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