STMicroelectronics STP19NM50N

Overview

STP19NM50N from STMicroelectronics is an N-channel 500 V, 200 mΩ typ. (250 mΩ max), 14 A MDmesh II Power MOSFET in TO-220 package. It delivers low gate charge (34 nC), low input capacitance (1000 pF), and 100% avalanche tested ruggedness for high-efficiency SMPS, PFC stages, and industrial motor drives operating up to 150 °C junction temperature.

For engineers reviewing the STP19NM50N datasheet, STP19NM50N pinout, STP19NM50N application, or STP19NM50N equivalent, key selection criteria include R_DS(on) at 10 V drive, unclamped avalanche energy (208 mJ), di/dt-rated reverse recovery (296 ns @ 100 A/µs), and thermal resistance (R_thJC = 1.14 °C/W) in TO-220 mounting configuration.

Technical Context

This device uses ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 500 V V_DS rating with 200 mΩ typical on-resistance enables operation in 400 V DC bus systems while maintaining safe SOA margins up to 10 ms at T_C = 25 °C.

The integrated body diode features 14 A continuous source-drain current, 1.5 V forward voltage, and controlled reverse recovery (Q_rr = 3.5 µC, t_rr = 296 ns) - critical for hard-switched bridge topologies where diode commutation losses dominate efficiency.

Key Specifications

Pinout & Package

STP19NM50N is housed in a TO-220 package with isolated tab (pin 2), standard three-terminal layout, and ECOPACK-compliant lead-free finish. The metal tab is electrically connected to the drain terminal and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Compared with STW19NM50N and IPP60R190C7, STP19NM50N offers optimal balance of cost, thermal performance in constrained spaces, and proven avalanche ruggedness - making it preferred for mid-power industrial SMPS where TO-220 mechanical fit and 2.5 kV isolation are mandatory.

Availability

STP19NM50N is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and PFC boost stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for STP19NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh II high-voltage power MOSFET product line, engineered specifically for high-efficiency AC-DC and DC-DC conversion in 380–400 V DC bus systems where low R_DS(on) × Q_g and rugged avalanche performance are critical.

FAQ

Is STP19NM50N suitable for use in non-isolated buck converters with 400 V input?

No - its 500 V V_DS rating provides only 25% margin over 400 V, which is insufficient for reliable operation under line surges or ringing. It is designed for isolated topologies (e.g., forward, flyback, LLC) or PFC boost stages where voltage stress remains within 80% of rating. For non-isolated 400 V buck, a 650 V device is strongly recommended.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±25 V per datasheet Table 1. Exceeding this - even briefly - risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., 18 V Zener) and limit dV/dt coupling; typical operating range is 0 to +12 V for logic-level compatibility or 0 to +15 V for enhanced R_DS(on) margin.

Does the TO-220 package of STP19NM50N provide electrical isolation between tab and leads?

Yes - the TO-220 variant used here (per DS6706 Rev 3, Section 4.2) is electrically isolated: the metal tab is connected solely to the drain, and creepage/clearance meets 2.5 kV RMS insulation rating (1 s, 25 °C). This allows direct mounting to grounded heatsinks without additional insulating hardware in Class I safety designs.

How does the body diode's reverse recovery compare to standard silicon diodes?

Its body diode exhibits soft, controlled recovery with t_rr = 296 ns and Q_rr = 3.5 µC at 100 A/µs di/dt - significantly faster and lower-charge than standard FRD or ultrafast diodes of comparable voltage rating. This reduces switching loss and EMI in hard-commutated bridges but does not match SiC diode performance in ultra-high-frequency ZVS designs.