STMicroelectronics STP19NM65N

Overview

STP19NM65N from STMicroelectronics is an N-channel 650 V, 0.25 Ω R_DS(on), 15.5 A TO-220 Power MOSFET based on second-generation MDmesh™ technology. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives, delivering low conduction loss and fast switching with 55 nC total gate charge and 150 W power dissipation at T_C = 25 °C.

For engineers reviewing the STP19NM65N datasheet, STP19NM65N pinout, STP19NM65N application, or STP19NM65N equivalent, key selection criteria include avalanche ruggedness (400 mJ E_AS), dv/dt immunity (30 V/ns), thermal resistance (0.83 °C/W j-case), and gate drive compatibility (V_GS(th) = 2–4 V).

Technical Context

This MOSFET employs ST's proprietary strip-based vertical MDmesh™ structure to minimize both R_DS(on) and gate charge simultaneously-achieving 0.25 Ω @ 10 V and 55 nC Q_g. Its 650 V V_DSS rating supports universal-input AC/DC converters up to 380 V DC bus.

The device integrates a robust body diode with t_rr = 460 ns (T_j = 25 °C) and Q_rr = 6 µC, enabling hard-switched flyback and resonant LLC topologies without external snubbing. Thermal design is anchored by R_thj-case = 0.83 °C/W in TO-220 package.

Key Specifications

Pinout & Package

STP19NM65N is housed in a through-hole TO-220 package with standard three-terminal configuration: Drain (Tab), Source (Pin 1), Gate (Pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with IPP65R041CFD7 and STP16NF60, STP19NM65N offers optimal balance of 650 V rating, 0.25 Ω R_DS(on), and 55 nC Q_g for 100–200 kHz industrial SMPS-delivering lower total loss than STP16NF60 and better dv/dt immunity than IPP65R041CFD7.

Availability

STP19NM65N is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, telecom rectifiers, and EV charger auxiliary supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP19NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

Is STP19NM65N suitable for zero-voltage switching (ZVS) topologies?

Yes. With C_oss = 110 pF and C_oss,eq = 230 pF (0–520 V), STP19NM65N enables reliable ZVS in phase-shifted full-bridge and LLC resonant converters operating up to 200 kHz. Its low gate charge (55 nC) and controlled dv/dt (30 V/ns) reduce turn-on loss and EMI generation during soft-switching transitions.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±25 V, but ST recommends 10 V for full enhancement and 0 V for guaranteed turn-off. Driving above 15 V increases gate oxide stress without meaningful R_DS(on) improvement, while below 8 V risks incomplete turn-on and elevated conduction loss under load.

Does STP19NM65N require a gate resistor for stability?

Yes. A 10 Ω non-inductive gate resistor is recommended between driver output and gate pin to dampen parasitic oscillation caused by PCB trace inductance and gate capacitance. This prevents spurious turn-on during high dv/dt events and ensures clean switching edges in noisy industrial environments.

Can STP19NM65N replace STP16NF60 in existing designs?

It can physically replace STP16NF60 in TO-220 footprints, but requires validation of voltage margin: STP16NF60 is rated for 600 V, while STP19NM65N is 650 V-making it safer for 380 V DC bus applications. However, its higher Q_g (55 nC vs. 35 nC) may increase gate drive losses if driver strength is unchanged.