Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP1N105K3

Name: STP1N105K3
Brand: STMicroelectronics
SKU: STP1N105K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP1N105K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP1N105K3.pdf

Description:: MOSFET N-CH 1050V 1.4A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:465

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP1N105K3 from STMicroelectronics is an N-channel SuperMESH3™ Power MOSFET in TO-220 package, rated for 1050 V drain-source voltage, 8 Ω typical R_DS(on), 1.4 A continuous drain current at T_C = 25 °C, and 60 W total power dissipation. It delivers high avalanche ruggedness (130 mJ single-pulse E_AS) and low gate charge (13 nC), making it suitable for high-voltage flyback and resonant converters in industrial SMPS.

For engineers reviewing the STP1N105K3 datasheet, STP1N105K3 pinout, STP1N105K3 application, or STP1N105K3 equivalent, key selection factors include its 1050 V V_DS, 60 W thermal capability in TO-220, 13 nC Q_g, 180 pF C_iss, and 100% avalanche-tested reliability for unclamped inductive switching.

Technical Context

This device employs ST's third-generation SuperMESH3™ vertical structure to achieve ultra-low R_DS(on) while maintaining high breakdown voltage. Its optimized gate geometry minimizes Q_g and Crss (1 pF), enabling fast switching with reduced Miller effect and improved hard-switching efficiency.

The MOSFET features a robust body diode with 244 ns reverse recovery time (T_j = 25 °C) and 1.3 μC Q_rr, supporting quasi-resonant and ZVS topologies. Thermal resistance R_thj-case is 2.08 °C/W in TO-220FP variant but rises to 6.25 °C/W in TO-220 - critical for heatsink sizing in 60 W operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1050 V - supports primary-side switching in >800 V DC-link or universal-input offline SMPS without derating.
R_DS(on) typ.	8 Ω - enables low conduction loss at 1.4 A ID, critical for efficiency in <10 W output flyback designs.
Q_g	13 nC - reduces gate drive power and allows use of smaller, lower-cost drivers in high-frequency operation.
E_AS	130 mJ - guarantees safe single-pulse avalanche operation under worst-case unclamped inductive turn-off.
C_iss	180 pF - limits capacitive switching loss and improves noise immunity in high-dv/dt environments.
T_j max	150 °C - defines maximum junction temperature for lifetime reliability under sustained 60 W dissipation.
dv/dt rating	6 V/ns - ensures robustness against parasitic turn-on during fast voltage transients in high-side configurations.

Pinout & Package

STP1N105K3 is housed in a TO-220 (Type A) through-hole package with isolated tab. The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless system grounding scheme permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance source node; connects to ground or negative rail; referenced for gate drive.
2 (Gate)	Control input for channel conduction	High-impedance MOS control node; requires low-inductance routing and RC snubber for dv/dt immunity.
3 (Drain)	Main high-voltage power terminal	Connected to primary winding or HV bus; tab is drain-connected - insulation required if heatsink grounded.

Key Features

Feature	Design Value
SuperMESH3™ vertical structure	Enables 1050 V rating with 8 Ω R_DS(on), achieving higher voltage-per-ohm ratio than prior SuperMESH generations.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 130 mJ - eliminates screening failures in field-reliability-critical applications.
Low C_oss (15 pF) & Crss (1 pF)	Reduces switching loss and improves controllability during hard-switching transitions at >100 kHz.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - suitable for green-certified products.
Extremely large avalanche performance	Supports unclamped inductive switching stress without external snubbers in properly designed flyback transformers.

Applications

Industrial Flyback SMPS

AC-DC Adapter Primary Switch

Use Scenario: 24–48 V output, 10–30 W offline flyback converter operating at 65–130 kHz with universal AC input (85–265 V_AC).

IC Role / Device Role: Primary-side high-voltage switching element handling full DC-link voltage up to 700 V peak.

Use Value: 1050 V V_DS provides 30% margin over 700 V peak, eliminating need for voltage clamping in most designs.

Use Scenario: Compact wall-plug adapter for IoT sensors and smart home devices requiring CE/UL certification.

IC Role / Device Role: Main power switch in primary-side regulated quasi-resonant flyback topology.

Use Value: Low Q_g (13 nC) and fast t_r/t_f (7/50 ns) enable high-frequency QR operation, reducing transformer size and EMI filter cost.

LED Driver for High-Bay Lighting

UPS Inverter Stage Switch

Use Scenario: Constant-current LED driver powering 100+ W high-intensity discharge replacement lamps in warehouse lighting.

IC Role / Device Role: High-voltage buck-boost or SEPIC switch operating with 400 V DC bus derived from rectified AC line.

Use Value: 130 mJ E_AS withstands surge currents during lamp cold-start, improving long-term reliability vs. non-avalanche-rated MOSFETs.

Use Scenario: Half-bridge inverter stage in line-interactive UPS converting 360–400 V DC bus to 230 V AC output.

IC Role / Device Role: High-side switching device subjected to repetitive unclamped inductive stress during battery backup mode.

Use Value: 100% avalanche testing ensures consistent failure threshold across production lots - essential for safety-critical backup systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW11NK100Z	1000 V V_DS, 0.95 Ω R_DS(on), TO-247 package, higher current (11 A), but 3× higher Q_g (38 nC)	Better for high-power (>100 W) hard-switched PFC or LLC; unsuitable for space-constrained TO-220 layouts	Select when higher current and thermal headroom are needed; avoid if board space or gate drive loss is constrained.
FQP1N105	1050 V V_DS, 12 Ω R_DS(on), TO-220, no avalanche rating, 16 nC Q_g, not 100% avalanche tested	Limited to non-safety-critical, low-volume consumer designs where cost dominates reliability requirements	Acceptable only for cost-sensitive applications with strict BOM cost targets and no field-reliability mandates.

Compared with STW11NK100Z, STP1N105K3 offers superior gate drive efficiency and compact footprint but lower current capacity; versus FQP1N105, it adds guaranteed avalanche ruggedness and tighter R_DS(on) tolerance - critical for industrial-grade longevity.

Availability

STP1N105K3 is available at Aetrix Electronics and suitable for industrial flyback SMPS, AC-DC adapters, high-bay LED drivers, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for STP1N105K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP1N105K3 belongs to the SuperMESH3™ Power MOSFET product line, engineered specifically for high-voltage, low-power switching applications demanding avalanche robustness and high-voltage-per-ohm efficiency in compact packages.

FAQ

Is STP1N105K3 pin-compatible with STF1N105K3 or STFW1N105K3?

No - STP1N105K3 uses TO-220 (3-pin, non-isolated tab), STF1N105K3 uses TO-220FP (3-pin, isolated tab), and STFW1N105K3 uses TO-3PF (3-pin, isolated tab). Pin numbering is identical (G-D-S), but mechanical mounting, thermal interface, and isolation differ significantly. Direct substitution requires PCB and heatsink redesign.

What is the maximum recommended gate resistor value for reliable switching?

For 100 kHz operation with 13 nC Q_g, a 10 Ω gate resistor is recommended to limit peak gate current to ~1 A while maintaining t_on/t_off < 50 ns. Values above 22 Ω increase switching loss and risk shoot-through in half-bridge configurations due to slower turn-off.

Does STP1N105K3 require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO cannot safely drive STP1N105K3: its 13 nC Q_g demands >10 mA peak current at 100 kHz, exceeding typical MCU pin ratings. A dedicated gate driver (e.g., STMicro's STGAP2S) is required to ensure fast, low-loss switching and prevent thermal runaway.

How does the 100% avalanche test impact field reliability in flyback designs?

Every STP1N105K3 undergoes single-pulse avalanche stress at 130 mJ - verifying that the die survives worst-case unclamped inductive energy without parametric shift. This eliminates infant mortality in flyback transformers with poor leakage inductance control and extends MTBF by >3× versus non-tested equivalents.

STP1N105K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1050 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11Ohm @ 600mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP1N105K3 FAQ

1.How can I place an order for STP1N105K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP1N105K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP1N105K3 reliable?

The price and inventory of STP1N105K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP1N105K3 is usually 5 days.

3.What payment methods are accepted for STP1N105K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP1N105K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP1N105K3?

STP1N105K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP1N105K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP1N105K3?

For technical support, including STP1N105K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP1N105K3 requirements.

6.How does Aetrix verify that STP1N105K3 is sourced from the original manufacturer or authorized distributors?

All STP1N105K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP1N105K3 meets industry standards.

7.What is the process for return or replacement of STP1N105K3?

All STP1N105K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP1N105K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP1N105K3 part is unused and in its original packaging.

Return procedure for STP1N105K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…