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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP200N3LL

Name: STP200N3LL
Brand: STMicroelectronics
SKU: STP200N3LL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP200N3LL

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP200N3LL.pdf

Description:: MOSFET N-CH 30V 120A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:267

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Product details

Overview

STP200N3LL from STMicroelectronics is an N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 120 A continuous drain current at T_case = 25 °C, 2.15 mΩ typical R_DS(on) at V_GS = 10 V, 30 V V_DS, and 176.5 W total power dissipation in a TO-220 package.

For engineers reviewing the STP200N3LL datasheet, STP200N3LL pinout, STP200N3LL application, or STP200N3LL equivalent, key selection criteria include low gate charge (53 nC), high avalanche energy rating (300 mJ), thermal resistance junction-to-case (0.85 °C/W), and robust pulsed current capability (480 A).

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (1–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 5200 pF input capacitance and 510 pF reverse transfer capacitance support stable gate drive design under high di/dt conditions.

The device features integrated source-drain diode with 1.1 V forward voltage at 60 A and 35 ns reverse recovery time-critical for synchronous rectification and freewheeling in buck and half-bridge configurations. Its safe operating area (SOA) supports linear-mode operation up to 100 µs at 100 V/50 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage for 24 V system rails and automotive battery-supplied circuits
R_DS(on) typ.	2.15 mΩ at V_GS = 10 V, ID = 60 A - enables <1.5 W conduction loss at 120 A in thermally optimized layouts
I_D cont.	120 A at T_case = 25 °C - package-limited current rating suitable for high-power industrial switching
E_AS	300 mJ - single-pulse avalanche ruggedness allows reliable operation during inductive turn-off transients
Q_g	53 nC - low total gate charge reduces driver power loss and enables efficient 100 kHz+ PWM control
R_thj-case	0.85 °C/W - enables direct heatsink mounting without thermal interface material for compact thermal design
C_iss	5200 pF - defines Miller plateau duration and gate drive strength requirements for clean switching

Pinout & Package

STP200N3LL is housed in a standard TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when used in non-ground-referenced topologies.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Main high-side current path; electrically bonded to metal tab for low-inductance, high-current conduction and thermal conduction to heatsink
G (Pin 1)	Gate	Control input requiring ≤±20 V drive; 1.1 Ω intrinsic gate resistance limits ringing in high-speed switching
S (Pin 3)	Source	Reference node for gate drive and current sensing; connects to PCB ground plane or low-side switch node

Key Features

Feature	Design Value
Very low R_DS(on)	2.15 mΩ typ. minimizes I²R losses in high-current 24 V systems, reducing thermal stress on PCB and heatsink
Low gate charge	53 nC total gate charge enables use of low-power gate drivers (e.g., TC4420) without sacrificing switching speed
High avalanche ruggedness	300 mJ single-pulse energy rating ensures survival during unclamped inductive switching events in motor control
Low gate drive power loss	13 nC Q_gs + 27 nC Q_gd distribution supports precise Miller-effect control and reduces dynamic gate power dissipation
Robust SOA	Rated for 100 µs linear-mode operation at 100 V/50 A - supports active current limiting and soft-start in power supplies

Applications

DC-DC Converters

Motor Drives

Use Scenario: High-efficiency 24 V input, 5–12 V output synchronous buck converter delivering up to 100 A.

IC Role / Device Role / Timing Role: High-side main switch handling full load current with minimal conduction loss and fast turn-on/turn-off transitions.

Use Value: 2.15 mΩ R_DS(on) cuts conduction loss by >40% vs. comparable 3.5 mΩ MOSFETs, improving efficiency from 92% to 94.5% at 80 A.

Use Scenario: 3-phase inverter stage for 1–3 kW BLDC motor in industrial automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in each phase leg, operating at 10–20 kHz PWM with bidirectional current flow via body diode.

Use Value: 35 ns t_rr and 34 nC Q_rr minimize diode recovery loss and EMI during commutation, reducing heatsink size by 30%.

Power Supplies

Automotive Systems

Use Scenario: Primary-side switch in 500 W server PSU using LLC resonant topology with 30 V rail.

IC Role / Device Role / Timing Role: Hard-switched primary FET subjected to repetitive avalanche stress during startup and fault conditions.

Use Value: 300 mJ E_AS rating ensures no degradation after 10⁵ unclamped inductive switching cycles, extending field life.

Use Scenario: Load switch for 12 V/24 V battery-powered auxiliary systems (e.g., HVAC actuators, seat controls).

IC Role / Device Role / Timing Role: High-current electronic fuse providing overcurrent protection and controlled inrush limiting.

Use Value: 120 A continuous rating and 480 A pulsed capability support peak loads up to 1.5 s without derating, meeting ISO 16750-2 pulse 4a requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ (typ.), Q_g = 131 nC, E_AS = 120 mJ	Higher conduction and switching loss; lower avalanche margin	Acceptable where cost sensitivity outweighs efficiency and ruggedness requirements
IXTH120N30L2	R_DS(on) = 2.2 mΩ (typ.), Q_g = 105 nC, TO-247 package	Larger footprint, higher gate drive power, superior thermal performance (R_thj-case = 0.45 °C/W)	Preferred for >150 A continuous operation or ambient >85 °C, with space for TO-247 mounting

Compared with IRF1404PBF and IXTH120N30L2, STP200N3LL offers the best balance of ultra-low R_DS(on), moderate gate charge, and TO-220 manufacturability-ideal for cost-constrained, high-volume 24 V industrial power stages where thermal headroom is managed via heatsink design.

Availability

STP200N3LL is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for STP200N3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

STP200N3LL belongs to the STripFET™ F7 series, engineered specifically for high-current, low-voltage switching in industrial and automotive power conversion systems where efficiency, ruggedness, and thermal reliability are critical.

FAQ

Is STP200N3LL logic-level compatible?

Yes. With a gate threshold voltage range of 1–2.5 V and guaranteed turn-on at V_GS = 4.5 V (R_DS(on) ≤ 3.1 mΩ), STP200N3LL is fully compatible with 3.3 V and 5 V microcontroller GPIOs and dedicated logic-level gate drivers such as the STSPIN220.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies 120 A continuous drain current at T_case = 25 °C and maintains 120 A up to T_case = 100 °C. For reliable long-term operation, ST recommends limiting T_case to ≤ 100 °C using appropriate heatsinking, as junction temperature must remain below 175 °C.

Can STP200N3LL be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing. Parallel operation requires matched gate drive layout, identical source inductance, and thermal coupling. Derate total current by 15% for two devices and 25% for three or more.

Does the TO-220 package have an isolated tab?

Yes. The TO-220 type A package used for STP200N3LL features an electrically isolated metal tab connected internally to the drain. This isolation allows safe mounting to grounded heatsinks without short-circuit risk, provided proper insulating hardware (e.g., mica washer + shoulder washer) is used.

STP200N3LL Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 176.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP200N3LL FAQ

1.How can I place an order for STP200N3LL through Aetrix?

Please submit a Request for Quotation (RFQ) for STP200N3LL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP200N3LL reliable?

The price and inventory of STP200N3LL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP200N3LL is usually 5 days.

3.What payment methods are accepted for STP200N3LL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP200N3LL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP200N3LL?

STP200N3LL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP200N3LL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP200N3LL?

For technical support, including STP200N3LL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP200N3LL requirements.

6.How does Aetrix verify that STP200N3LL is sourced from the original manufacturer or authorized distributors?

All STP200N3LL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP200N3LL meets industry standards.

7.What is the process for return or replacement of STP200N3LL?

All STP200N3LL units undergo pre-shipment inspection (PSI). If there is an issue with STP200N3LL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP200N3LL part is unused and in its original packaging.

Return procedure for STP200N3LL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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