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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP200N4F3

Name: STP200N4F3
Brand: STMicroelectronics
SKU: STP200N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP200N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP200N4F3.pdf

Description:: MOSFET N-CH 40V 120A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,428

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Product details

Overview

STP200N4F3 from STMicroelectronics is an N-channel 40 V, 120 A, 300 W planar STripFET™ III Power MOSFET in TO-220 package, featuring R_DS(on) < 0.0035 Ω at V_GS = 10 V and 100% avalanche tested for robustness in high-current switching. It serves as a main power switch in DC-DC converters, motor drivers, and automotive body control modules.

For engineers reviewing the STP200N4F3 datasheet, STP200N4F3 pinout, STP200N4F3 application, or STP200N4F3 equivalent, this page delivers verified electrical ratings, thermal performance data, gate charge behavior, diode recovery metrics, and real-world switching timing under defined test conditions (V_DD = 20 V, I_D = 60 A, R_G = 4.7 Ω).

Technical Context

This MOSFET employs STripFET™ III planar technology optimized for low on-resistance and fast switching, with gate threshold voltage (2–4 V) enabling standard logic-level drive compatibility. Its safe operating area supports pulsed drain currents up to 480 A and single-pulse avalanche energy of 862 mJ at T_j = 25 °C.

Thermal design is enabled by R_thJC = 0.50 °C/W (junction-to-case), while R_thJA = 62.5 °C/W (junction-to-ambient) reflects TO-220 mounting constraints. The integrated source-drain diode exhibits t_rr = 67 ns and Q_rr = 130 nC under I_SD = 120 A, dI/dt = 100 A/µs, and T_j = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in off-state; defines use in ≤40 V rail systems.
R_DS(on) max	<0.0035 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 60 A, critical for high-efficiency power stages.
I_D continuous	120 A @ T_C = 25 °C - Sustained current capability with heatsink; derates linearly above 25 °C.
Q_g	75 nC - Total gate charge determines driver strength requirement and switching loss trade-off.
t_r/t_f	180 ns / 65 ns - Rise/fall times define minimum PWM frequency limit and EMI profile in hard-switched topologies.
E_AS	862 mJ - Avalanche energy rating validates ruggedness during inductive turn-off transients without external snubbers.
V_GS(th)	2–4 V - Threshold range ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs.

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting requires mechanical isolation unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to system ground; carries full load current and influences PCB layout thermal relief.
2 (Gate)	Control input for channel conduction	High-impedance node requiring low-inductance routing and gate resistor (e.g., 4.7 Ω) to damp oscillation and control dV/dt.
3 (Drain)	Main power output terminal	Connected to internal die backside; electrically tied to metal tab-requires insulating washer if mounted to heatsink at non-drain potential.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees device survival under unclamped inductive switching stress without parameter shift or failure.
Standard threshold drive	V_GS(th) range (2–4 V) allows direct interface with 3.3 V/5 V logic without level-shifting circuitry.
Low R_DS(on) < 0.0035 Ω	Minimizes I²R conduction losses in high-current paths, reducing heatsink size and improving system efficiency.
Fast diode recovery (t_rr = 67 ns)	Reduces switching losses and voltage spikes in synchronous rectification and freewheeling applications.

Applications

Automotive Body Control Module

Industrial DC Motor Drive

Use Scenario: High-side switching of 12 V loads including headlights, fans, and solenoids in vehicle body electronics.

IC Role / Device Role / Timing Role: Main power switch controlling load activation/deactivation via MCU GPIO with PWM dimming capability.

Use Value: Avalanche rating ensures reliability during battery disconnect transients; low R_DS(on) limits temperature rise during sustained 100 A peak loads.

Use Scenario: H-bridge leg in 24–48 V brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current flow and regenerative braking energy.

Use Value: Fast t_f (65 ns) enables efficient 20 kHz PWM operation; integrated diode eliminates need for external freewheeling diodes.

Server PSU OR-ing Circuit

Telecom Hot-Swap Controller

Use Scenario: OR-ing FET in redundant 48 V intermediate bus architecture to prevent backfeed between parallel power supplies.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with controlled turn-on to minimize inrush and reverse current.

Use Value: Low Q_g (75 nC) enables fast, precise gate control using dedicated OR-ing controllers; R_DS(on) contributes directly to insertion loss budget.

Use Scenario: Inrush limiting and fault protection in hot-pluggable line cards operating from -48 V telecom distribution rails.

IC Role / Device Role / Timing Role: Series pass element controlled by analog current-limit amplifier to manage startup surge and short-circuit response.

Use Value: Robust SOA supports 480 A pulsed current during fault clearing; V_GS = ±20 V rating accommodates gate drive headroom in noisy environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 0.004 Ω @ 10 V; higher Q_g = 130 nC; same TO-220 package	Higher switching loss due to larger gate charge; less suitable for >100 kHz operation	Prefer STP200N4F3 where gate drive strength is limited or efficiency at high frequency is critical.
IXTH120N04S	R_DS(on) = 0.0028 Ω @ 10 V; higher V_GS(th) = 2.5–4.5 V; TO-247 package	Larger footprint and higher cost; better thermal R_thJC (0.35 °C/W) for ultra-high-power density designs	Choose IXTH120N04S only when junction temperature must stay below 125 °C under 120 A continuous without forced air.

Compared with IRF1404PBF and IXTH120N04S, STP200N4F3 offers the best balance of low gate charge, industry-standard TO-220 footprint, and proven avalanche ruggedness-making it optimal for cost-sensitive, thermally constrained 40 V automotive and industrial switching applications.

Availability

STP200N4F3 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drives, server OR-ing circuits, and telecom hot-swap controllers requiring stable component supply across extended production lifecycles.

Supply support for STP200N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP200N4F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding low conduction loss, fast switching, and field-proven ruggedness in harsh environments.

FAQ

Is STP200N4F3 suitable for 12 V automotive battery applications?

Yes. With V_DS = 40 V and avalanche-rated operation, STP200N4F3 safely handles load-dump transients up to 35 V and cold-crank dips down to 6 V. Its 120 A continuous rating supports high-power lighting and actuator loads when properly heatsinked per R_thJC = 0.50 °C/W.

What is the maximum recommended gate resistor value for PWM switching at 50 kHz?

For 50 kHz PWM with minimal overshoot and acceptable switching loss, a gate resistor of 4.7 Ω is validated per Figure 13 test circuit. Increasing beyond 10 Ω significantly extends t_r/t_f, raising total switching loss; values below 2.2 Ω risk ringing and gate driver overstress.

Does STP200N4F3 have a built-in ESD protection diode on the gate?

No. STP200N4F3 lacks integrated gate ESD protection. Gate-source voltage must be clamped externally to ±20 V, and handling requires standard MOSFET ESD precautions-including grounded wrist straps and ionized air workstations-to avoid latent damage from static discharge.

Can STP200N4F3 replace STB200N4F3 in a D²PAK-based PCB layout?

No. STP200N4F3 uses TO-220, while STB200N4F3 uses D²PAK (TO-263). Their footprints, thermal vias, and solder pad patterns are incompatible. Electrical substitution is possible only after redesigning the PCB layout, adjusting gate drive impedance, and verifying thermal performance with R_thJC = 0.50 °C/W (TO-220) vs. 0.40 °C/W (D²PAK).

STP200N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP200N4F3 FAQ

1.How can I place an order for STP200N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP200N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP200N4F3 reliable?

The price and inventory of STP200N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP200N4F3 is usually 5 days.

3.What payment methods are accepted for STP200N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP200N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP200N4F3?

STP200N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP200N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP200N4F3?

For technical support, including STP200N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP200N4F3 requirements.

6.How does Aetrix verify that STP200N4F3 is sourced from the original manufacturer or authorized distributors?

All STP200N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP200N4F3 meets industry standards.

7.What is the process for return or replacement of STP200N4F3?

All STP200N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STP200N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP200N4F3 part is unused and in its original packaging.

Return procedure for STP200N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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