STMicroelectronics STP200N6F3

Overview

STP200N6F3 from STMicroelectronics is an N-channel 60 V, 3.8 mΩ, 120 A TO-220 Power MOSFET based on STripFET™ III technology, designed for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers ultra-low R_DS(on), 100% avalanche-rated ruggedness, and 330 W total dissipation at T_C = 25°C.

For engineers reviewing the STP200N6F3 datasheet, STP200N6F3 pinout, STP200N6F3 application, or STP200N6F3 equivalent, key selection criteria include continuous drain current (120 A), thermal resistance (0.45 °C/W junction-to-case), gate charge (101 nC), safe operating area (SOA) at 100 µs–10 ms, and source-drain diode recovery performance (t_rr = 67 ns, Q_rr = 177.6 nC).

Technical Context

This MOSFET employs STripFET™ III planar trench-gate architecture optimized for minimizing conduction loss while maintaining robust switching behavior. Its 60 V V_DS rating supports 48 V industrial bus systems, and its 120 A continuous current capability is package-limited-not silicon-limited-enabling reliable operation under sustained high-load conditions.

The device features a fully characterized body diode with 120 A forward current and fast reverse recovery (t_rr = 67 ns at T_j = 150°C), making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Avalanche energy rating of 918 mJ ensures survivability during unclamped inductive switching events.

Key Specifications

Pinout & Package

STP200N6F3 uses the standard TO-220AB package (3-lead, straight lead form) with isolated tab. The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless system grounding scheme permits direct connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IRFB4115PBF and IXTH120N60L2, STP200N6F3 offers the optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness in the cost- and space-constrained TO-220 form factor-making it ideal for industrial motor control and high-reliability DC-DC designs where both efficiency and fault tolerance are mandatory.

Availability

STP200N6F3 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and solenoid/relay drivers requiring stable component supply and long-term production continuity.

Supply support for STP200N6F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and discrete devices with vertical manufacturing capability.

STP200N6F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial automation, renewable energy inverters, and server power supplies.

FAQ

What is the maximum continuous drain current for STP200N6F3 at 100°C case temperature?

The STP200N6F3 maintains 120 A continuous drain current rating at T_C = 100°C, as confirmed in Table 2 of the official datasheet (Doc ID 15606 Rev 2). This value is limited by package wire bonding integrity-not silicon thermal limits-and remains constant from 25°C to 100°C case temperature.

Is STP200N6F3 suitable for synchronous rectification in a 200 kHz LLC resonant converter?

Yes. With t_rr = 67 ns and Q_rr = 177.6 nC at T_j = 150°C, STP200N6F3's body diode meets timing and charge requirements for synchronous rectification up to 250 kHz. Its low R_DS(on) further reduces conduction loss versus Schottky alternatives in 48 V output stages.

Does STP200N6F3 have a thermally isolated package variant?

No. The TO-220AB package used by STP200N6F3 has an electrically connected drain tab. Thermal isolation requires mechanical insulation (e.g., mica washer + thermal grease) or alternative packages like D²PAK with isolated tab option-STB200N6F3 is the D²PAK variant with identical electrical specs but different mounting interface.

What is the gate threshold voltage range for STP200N6F3, and how does it affect drive compatibility?

V_GS(th) is specified from 2 V to 4 V (Table 4), meaning the device begins conducting significantly at ~2.5 V and achieves full enhancement near 10 V. This range ensures compatibility with 3.3 V logic-level drivers when used with gate boosters, but standard 5 V microcontrollers require external level-shifting or dedicated gate drivers for reliable saturation.