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STMicroelectronics STP200NF03
- Part No.:
- STP200NF03
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP200NF03.pdf
- Description:
- MOSFET N-CH 30V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:981
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Product details
Overview
STP200NF03 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 30V VDSS, 0.0032Ω RDS(on) at VGS = 10V, and 120A continuous drain current at TC = 25°C. It features rugged unclamped inductive switching capability (EAS = 1.45J), 100% avalanche tested, and is optimized for high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the STP200NF03 datasheet, STP200NF03 pinout, STP200NF03 application, or STP200NF03 equivalent, key selection criteria include low on-resistance at standard gate drive (VGS = 10V), thermal resistance junction-to-case (0.5°C/W), safe operating area under unclamped inductive loads, and TO-220 mechanical compatibility with heatsink mounting.
Technical Context
This STripFET™ III device uses ST's "Single Feature Size™" strip-based process to achieve high cell density and low RDS(on) while maintaining robust avalanche performance. Its gate threshold voltage (2–4V) supports standard logic-level drive, and its dynamic parameters-Qg = 113nC, Qgd = 41nC, and Ciss = 4950pF-indicate suitability for high-frequency switching up to ~100kHz in hard-switched topologies.
The integrated source-drain diode exhibits trr = 70ns and Qrr = 170nC at ISD = 120A, di/dt = 100A/µs, and Tj = 150°C, enabling use in synchronous rectification and freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche; defines use in ≤24V nominal bus systems with margin. |
| RDS(on) | 0.0032Ω @ VGS = 10V - Enables <1.5W conduction loss at 60A, critical for high-efficiency power stages. |
| ID (cont) | 120A @ TC = 25°C - Package-limited current; requires heatsinking to sustain >60A continuously in real PCB layouts. |
| EAS | 1.45J - Single-pulse avalanche energy at Tj = 25°C; supports reliable operation during inductive turn-off transients. |
| Rthj-case | 0.5°C/W - Junction-to-case thermal resistance; enables direct heatsink mounting without thermal interface material degradation concerns. |
| Qg | 113nC - Total gate charge at VDD = 24V, ID = 120A; determines driver strength requirement (~2A peak for 100ns rise time). |
| tr/tf | 195ns/60ns - Rise/fall times under 15V VDD, 60A load, RG = 4.7Ω; sets practical switching frequency ceiling in hard-switched designs. |
Pinout & Package
STP200NF03 is housed in a through-hole TO-220 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to heatsink. Mounting requires isolation hardware unless drain is at system ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Gate (G) | Control input; requires low-impedance drive to minimize switching losses; sensitive to ESD (±20V absolute max). |
| Lead 2 (center) | Drain (D) | Main high-side current path; connected to metal tab; must be isolated from heatsink unless referenced to system ground. |
| Lead 3 (right) | Source (S) | Power return node; forms reference for gate drive; carries full load current and influences layout parasitics. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ III process | Enables 0.0032Ω RDS(on) in TO-220 without die size compromise, reducing conduction loss vs. legacy planar MOSFETs. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥1.45J across production lot, eliminating need for derating in inductive switching applications. |
| Standard threshold drive | VGS(th) = 2–4V allows direct interfacing with 3.3V/5V microcontrollers and gate drivers without level-shifting circuitry. |
| ECOPACK® compliance | Lead-free second-level interconnect meets RoHS and JEDEC JESD97; marked on package and inner box label. |
| Rugged SOA | Supports 120A pulsed drain current (IDM = 480A) and unclamped inductive switching per Figure 1, enabling robust motor control designs. |
Applications
| DC-DC Converter Primary Switch | Automotive Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: High-current buck converter in 12V automotive subsystems (e.g., ADAS camera power supply). IC Role / Device Role / Timing Role: Main high-side switching element handling 80–100A peak currents at 200–500kHz switching frequency. Use Value: Low RDS(on) (0.0032Ω) limits conduction loss to <26W at 100A, while 0.5°C/W Rthj-case enables compact heatsink integration. |
Use Scenario: H-bridge leg in 24V brushed DC motor controller for power seat actuation. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating bidirectional 60A stall current with fast turn-off. Use Value: Fast fall time (60ns) and low Qgd (41nC) reduce cross-conduction risk; avalanche rating protects against inductive kickback during PWM dead-time. |
| Industrial AC-DC PFC Switch | Server VRM High-Side FET |
|
Use Scenario: Boost switch in active PFC stage of 1kW industrial power supply. IC Role / Device Role / Timing Role: Carries 30–40A RMS current at 65–100kHz, subjected to repetitive unclamped inductive stress. Use Value: 1.45J EAS and SOA curve (Figure 1) ensure reliability under line-voltage transients without snubber circuits. |
Use Scenario: High-side synchronous rectifier in 48V-to-12V intermediate bus converter for AI server racks. IC Role / Device Role / Timing Role: Conducts 120A continuous current with minimal voltage drop to maximize conversion efficiency. Use Value: RDS(on) = 0.0032Ω yields only 46mV drop at 120A, reducing conduction loss by >30% versus comparable 4mΩ devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 0.004Ω @ 10V, VDSS = 40V, TO-220, Qg = 131nC | Higher voltage rating but higher on-resistance and gate charge; less efficient at 12–24V buses | Prefer when 40V blocking margin is required and thermal headroom exists for +28% conduction loss. |
| IXTP120N04T | RDS(on) = 0.0031Ω @ 10V, VDSS = 40V, TO-220, EAS not specified | Marginally lower RDS(on) but no guaranteed avalanche rating; different gate charge profile (Qg = 92nC) | Select only if avalanche robustness is not required and gate driver can accommodate lower Qg with faster dV/dt control. |
Compared with IRF1404PBF and IXTP120N04T, STP200NF03 delivers superior conduction efficiency at 30V-class systems, guaranteed avalanche ruggedness for inductive loads, and optimized gate charge for standard 10V drive-making it preferred for thermally constrained, high-reliability motor and converter designs.
Availability
STP200NF03 is available at Aetrix Electronics and suitable for high-current DC-DC converters, automotive motor drives, and industrial power factor correction circuits requiring stable component supply and long-term manufacturability.
Supply support for STP200NF03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.
This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding ultra-low RDS(on), rugged avalanche performance, and TO-220 mechanical compatibility.
FAQ
What is the maximum continuous drain current for STP200NF03 at 100°C case temperature?
The datasheet specifies ID = 120A at TC = 100°C (Table 1), confirming that the 120A rating is not derated with temperature up to 100°C-this reflects package-limited current rather than silicon-limited current, enabled by the 0.5°C/W Rthj-case and robust bond wire construction.
Does STP200NF03 require a gate resistor for safe operation?
Yes-a gate resistor (typically 4.7Ω as used in datasheet switching tests) is required to control dv/dt and di/dt during turn-on/turn-off, prevent oscillation, and limit peak gate current; omitting it risks shoot-through in bridge configurations and excessive EMI due to ringing.
Can STP200NF03 be used in synchronous rectification topologies?
Yes-the integrated body diode has trr = 70ns and Qrr = 170nC at 120A, enabling use in synchronous buck converters where controlled turn-off minimizes reverse recovery loss; however, external Schottky diodes may still be preferred for <50ns recovery requirements.
Is STP200NF03 qualified for automotive applications?
No-it is not specified as automotive-grade per ST's qualification standards (AEC-Q101); while widely used in 12V automotive subsystems, ST explicitly states non-automotive-grade parts are used at user's own risk, and no PPAP documentation or extended temperature validation is provided.
STP200NF03 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4950 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP200NF03 FAQ
1.How can I place an order for STP200NF03 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP200NF03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP200NF03 reliable?
The price and inventory of STP200NF03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP200NF03 is usually 5 days.
3.What payment methods are accepted for STP200NF03?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP200NF03 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP200NF03?
STP200NF03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP200NF03 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP200NF03?
For technical support, including STP200NF03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP200NF03 requirements.
6.How does Aetrix verify that STP200NF03 is sourced from the original manufacturer or authorized distributors?
All STP200NF03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP200NF03 meets industry standards.
7.What is the process for return or replacement of STP200NF03?
All STP200NF03 units undergo pre-shipment inspection (PSI). If there is an issue with STP200NF03, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP200NF03 part is unused and in its original packaging.
Return procedure for STP200NF03:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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