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STMicroelectronics STP200NF04

Part No.:
STP200NF04
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP200NF04.pdf
Description:
MOSFET N-CH 40V 120A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,512

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Product details

Overview

STP200NF04 from STMicroelectronics is an N-channel 40 V, 120 A TO-220 power MOSFET with 3.7 mΩ RDS(on) at VGS = 10 V, 100% avalanche tested, and optimized for high-current switching in automotive and industrial DC-DC converters.

For engineers reviewing the STP200NF04 datasheet, STP200NF04 pinout, STP200NF04 application, or STP200NF04 equivalent, key selection criteria include its 310 W power dissipation, 1.5 V/ns dv/dt rating, 1.3 J single-pulse avalanche energy, and thermal resistance of 0.48 °C/W (junction-to-case), critical for high-reliability motor drive and battery protection designs.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling ultra-low on-resistance and high current density while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2–4 V) supports standard 10 V logic-level drive without requiring level-shifting circuitry.

The device integrates a fast-recovery body diode with trr = 85 ns and Qrr = 190 nC at Tj = 150 °C, making it suitable for synchronous rectification and freewheeling paths where reverse recovery losses must be minimized in high-frequency SMPS topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum drain-source blocking voltage compatible with 24 V/36 V automotive systems and 48 V industrial rails.
RDS(on)3.7 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 120 A continuous current, reducing heatsink requirements.
ID (cont.)120 A @ TC = 25 °C - Sustains full rated current with proper heatsinking, supporting high-power BLDC motor phase switches.
EAS1.3 J - Single-pulse avalanche energy rating ensures robustness against inductive kickback in relay drivers and solenoid controls.
Qg170 nC - Gate charge value determines driver strength requirement; compatible with common 1–2 A peak gate drivers.
tr/tf320 ns / 120 ns - Fast switching transitions minimize overlap losses in hard-switched 100–500 kHz converters.
Rthj-case0.48 °C/W - Low thermal resistance enables efficient heat transfer to heatsink, critical for sustained 310 W operation.

Pinout & Package

STP200NF04 uses the TO-220 package (3-pin, through-hole), with Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and must be isolated from chassis ground unless circuit topology requires common-drain configuration.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives 10 V logic-level signal; requires low-impedance drive path due to 170 nC total gate charge.
Pin 2 (Drain)High-side switch nodeConnected to metal tab; carries full load current and must be thermally coupled to heatsink with electrical isolation if needed.
Pin 3 (Source)Reference returnServes as local ground reference for gate drive; layout must minimize inductance to prevent ringing during switching.

Key Features

FeatureDesign Value
100% avalanche testedGuarantees robustness under unclamped inductive switching stress, eliminating need for external snubbers in motor control H-bridges.
StripFET™ II processDelivers 3.7 mΩ RDS(on) in TO-220, achieving >3× current density vs. conventional planar MOSFETs of same footprint.
Fast body diode85 ns reverse recovery time and 190 nC Qrr reduce switching losses in synchronous buck and flyback converters.
Standard thresholdVGS(th) = 2–4 V allows direct interface with microcontroller GPIOs or standard logic-level drivers without gate boosters.

Applications

Automotive Motor ControlIndustrial DC-DC Converters

Use Scenario: High-side switch in 12 V/24 V BLDC motor phase leg for power steering or HVAC actuators.

IC Role / Device Role / Timing Role: Power switch handling 120 A peak currents with fast turn-on/off to maintain precise PWM timing and torque resolution.

Use Value: 3.7 mΩ RDS(on) reduces conduction loss by >40% vs. legacy 5 mΩ devices, extending battery runtime and lowering thermal design burden.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with 320 ns rise time to minimize dead-time losses and improve efficiency.

Use Value: 1.3 J EAS withstands transformer leakage inductance spikes without failure, eliminating need for clamping circuits.

Battery Protection CircuitsHigh-Current Relay Replacement

Use Scenario: Solid-state main disconnect switch in Li-ion battery packs for EV auxiliary systems or energy storage.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch (via body diode) with overcurrent and short-circuit protection response.

Use Value: 480 A pulsed drain current rating supports 10× surge tolerance during pack hot-plug events, improving system safety margin.

Use Scenario: Electromechanical relay replacement in industrial PLC output modules controlling 100 A resistive loads.

IC Role / Device Role / Timing Role: Zero-crossing–capable solid-state switch with low RDS(on) to eliminate contact arcing and wear.

Use Value: 0.48 °C/W Rthj-case enables stable 120 A operation without forced air, reducing system size and acoustic noise vs. relay-based solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404RDS(on) = 4.0 mΩ, EAS = 0.9 J, Qg = 131 nCLower avalanche robustness; less suitable for unclamped inductive loadsPrefer when gate drive current is limited and avalanche stress is minimal.
IXTH120N04SRDS(on) = 3.2 mΩ, TO-247 package, Rthj-case = 0.35 °C/WHigher cost and larger footprint; better thermal performance but over-specified for TO-220-limited spaceChoose only when >310 W dissipation or >120 A continuous current at elevated ambient is required.

Compared with IRF1404 and IXTH120N04S, STP200NF04 delivers optimal balance of low RDS(on), proven avalanche ruggedness, and TO-220 manufacturability-making it ideal for cost-sensitive, high-volume automotive and industrial power stages where reliability and thermal constraints intersect.

Availability

STP200NF04 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, battery protection circuits, and high-current relay replacement requiring stable component supply and long-term production continuity.

Supply support for STP200NF04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The STP200NF04 belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-current, high-reliability switching in automotive and industrial power conversion where avalanche robustness and thermal efficiency are non-negotiable.

FAQ

What is the maximum continuous drain current for STP200NF04 at 100°C case temperature?

The STP200NF04 maintains 120 A continuous drain current rating up to TC = 100 °C, per its Absolute Maximum Ratings table. This is enabled by its low RDS(on) and 0.48 °C/W junction-to-case thermal resistance, allowing stable operation without derating in well-heatsinked applications.

Does STP200NF04 require a gate resistor for safe switching?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. With 170 nC total gate charge and typical gate driver rise/fall times, a 4.7 Ω resistor (as used in the datasheet test circuit) limits peak gate current to ~2.1 A and ensures stable 320 ns rise time, avoiding shoot-through in half-bridge configurations.

Can STP200NF04 be used in synchronous rectification applications?

Yes-the integrated body diode has trr = 85 ns and Qrr = 190 nC at 150 °C, enabling use in secondary-side synchronous rectification of forward or LLC converters up to 300 kHz. However, external Schottky diodes may still be preferred for <100 ns recovery or <100 °C operation due to lower Qrr.

Is the TO-220 package of STP200NF04 lead (Pb)-free and RoHS compliant?

Yes-STP200NF04 is manufactured in accordance with STMicroelectronics' ECOPACK®2 standard, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The TO-220 package uses matte tin plating on leads and Pb-free solder-compatible terminations.

STP200NF04 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
210 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
310W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP200NF04 FAQ

1.How can I place an order for STP200NF04 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP200NF04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP200NF04 reliable?

The price and inventory of STP200NF04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP200NF04 is usually 5 days.

3.What payment methods are accepted for STP200NF04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP200NF04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP200NF04?

STP200NF04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP200NF04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP200NF04?

For technical support, including STP200NF04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP200NF04 requirements.

6.How does Aetrix verify that STP200NF04 is sourced from the original manufacturer or authorized distributors?

All STP200NF04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP200NF04 meets industry standards.

7.What is the process for return or replacement of STP200NF04?

All STP200NF04 units undergo pre-shipment inspection (PSI). If there is an issue with STP200NF04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP200NF04 part is unused and in its original packaging.

Return procedure for STP200NF04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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