Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP200NF04L

Name: STP200NF04L
Brand: STMicroelectronics
SKU: STP200NF04L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP200NF04L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP200NF04L.pdf

Description:: MOSFET N-CH 40V 120A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,991

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP200NF04L from STMicroelectronics is an N-channel enhancement-mode MOSFET designed for high-current, high-speed switching in automotive and industrial power systems. It features a 40 V drain-source breakdown voltage, 3.8 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 50 A, 120 A continuous drain current, 100% avalanche tested, and TO-220 package with 0.50 °C/W junction-to-case thermal resistance.

For engineers reviewing the STP200NF04L datasheet, STP200NF04L pinout, STP200NF04L application, or STP200NF04L equivalent, key selection criteria include low on-resistance for conduction loss minimization, rugged unclamped inductive switching capability (E_AS = 1.4 J), fast switching times (t_d(on) = 37 ns, t_f = 80 ns), and automotive-grade reliability under high di/dt stress.

Technical Context

This STripFET™ II device uses STMicroelectronics' Single Feature Size™ strip-based process to achieve high cell density and low R_DS(on). Its internal structure supports high pulsed current handling (I_DM = 480 A) and exhibits controlled dv/dt immunity (3.6 V/ns) during diode recovery.

The MOSFET integrates a robust body diode with t_rr = 88 ns and Q_rr = 240 nC at T_j = 150°C, enabling efficient synchronous rectification and flyback energy management in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; suitable for 24 V automotive bus and 36 V industrial DC systems.
R_DS(on) (V_GS = 10 V)	3.8 mΩ - Enables ≤ 5.5 W conduction loss at 120 A, reducing heatsink requirements in high-power motor drives.
I_D (T_C = 25°C)	120 A - Continuous current rating at case temperature 25°C; derates linearly to 120 A at 100°C due to package thermal design.
E_AS	1.4 J - Single-pulse avalanche energy at I_AR = 50 A, V_DD = 30 V, T_j = 25°C; ensures robustness against inductive turn-off transients.
Q_g	72 nC - Total gate charge at V_DD = 32 V, I_D = 100 A, V_GS = 4.5 V; determines driver strength requirement for <100 ns switching transitions.
t_r/t_f	270 ns / 80 ns - Rise/fall times under resistive load (V_DD = 20 V, I_D = 50 A, R_G = 4.7 Ω); enables >100 kHz PWM operation with low switching loss.

Pinout & Package

STP200NF04L is housed in a TO-220 package with standard three-terminal configuration: Drain connected to tab (electrically active), Source and Gate on isolated leads. Mounting requires insulating washer when heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Provides low-inductance, high-current path to heatsink; must be electrically isolated unless system ground reference permits direct mounting.
Source	Reference node for gate drive and current return path	Serves as common return for load current and gate driver ground; layout must minimize source inductance to preserve switching speed and stability.
Gate	Control electrode for channel modulation	Requires low-impedance drive (R_G ≤ 4.7 Ω recommended) to fully charge 72 nC within nanoseconds; sensitive to ESD (±16 V max rating).

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 1.4 J without parameter shift-critical for automotive load-dump and motor freewheeling events.
Low threshold voltage (1–4 V)	Enables reliable turn-on with 5 V logic-level gate drivers, eliminating need for level-shifting in 3.3 V/5 V microcontroller interfaces.
High dv/dt immunity (3.6 V/ns)	Prevents false turn-on during fast voltage transients in half-bridge configurations, improving system noise immunity without snubbers.
Optimized body diode (t_rr = 88 ns)	Reduces reverse recovery losses and EMI in synchronous buck and LLC resonant converters operating above 50 kHz.

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: High-side switch in 12 V/24 V brushed DC motor drivers for power seats, windows, and HVAC actuators.

IC Role / Device Role / Timing Role: Power switch controlling bidirectional motor current; operates in PWM mode at 1–20 kHz with fast turn-on/off to minimize torque ripple.

Use Value: 3.8 mΩ R_DS(on) limits I²R loss to <7 W at 120 A peak, enabling compact thermally constrained modules without forced air cooling.

Use Scenario: Primary-side switch in isolated 400 W telecom DC-DC brick converting 48 V input to 12 V output.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or push-pull topology; handles 100 A peak drain current with 300 ns total switching time.

Use Value: 1.4 J E_AS withstands transformer leakage inductance spikes during overcurrent fault, preventing catastrophic failure during short-circuit events.

Power Distribution Units

High-Current Battery Protection

Use Scenario: Solid-state main contactor replacement in EV auxiliary power distribution units (PDUs) managing 120 A loads.

IC Role / Device Role / Timing Role: Low-side switching element for load disconnect; driven by isolated gate driver with 100 ns propagation delay.

Use Value: TO-220 package allows direct bolt-down to copper busbar, achieving 0.50 °C/W thermal resistance and sustaining 120 A continuously at T_C = 100°C.

Use Scenario: Overcurrent protection switch in 48 V lithium-ion battery packs for material handling equipment.

IC Role / Device Role / Timing Role: Fast-acting disconnect switch triggered by protection IC during >200 A fault; turns off within 200 ns to limit energy dissipation.

Use Value: 480 A pulsed drain rating (I_DM) and 88 ns diode t_rr ensure safe interruption of high di/dt faults without parasitic oscillation or latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.0 mΩ (typ), E_AS = 1.1 J, Q_g = 131 nC	Higher gate charge increases driver complexity; lower avalanche rating reduces margin in inductive switching.	Acceptable where cost sensitivity outweighs switching efficiency and transient robustness.
IXTH120N04S3	R_DS(on) = 2.9 mΩ (typ), E_AS = 2.0 J, TO-247 package	Larger footprint and higher cost; superior thermal performance (R_thj-c = 0.35 °C/W) suits >150 A designs.	Preferred for next-generation upgrades requiring higher current density and extended SOA.

Compared with IRF1404PbF and IXTH120N04S3, STP200NF04L delivers optimal balance of low R_DS(on), proven automotive ruggedness, and TO-220 manufacturability-making it ideal for cost-sensitive, high-reliability 120 A switching where board space and thermal interface simplicity are critical.

Availability

STP200NF04L is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and power distribution units requiring stable component supply across multi-year production cycles.

Supply support for STP200NF04L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete solutions with vertical manufacturing and AEC-Q101 qualification expertise.

This MOSFET belongs to ST's STripFET™ II family, engineered specifically for high-current automotive powertrain and body electronics where avalanche ruggedness, low on-resistance, and thermal reliability are mandatory.

FAQ

What is the maximum gate-source voltage rating for STP200NF04L?

The absolute maximum V_GS rating is ±16 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped between 0 V and 12 V, with 10 V recommended for full enhancement and minimal R_DS(on). Transient overshoot must be suppressed using gate resistors and Zener clamps.

Can STP200NF04L be used in synchronous rectification applications?

Yes-its body diode has t_rr = 88 ns and Q_rr = 240 nC at 150°C, enabling use in secondary-side synchronous rectification of forward or LLC converters up to 200 kHz. However, external Schottky diodes remain preferred for ultra-low V_SD (<0.5 V) requirements below 10 A.

Is STP200NF04L qualified for automotive applications?

Yes-it is AEC-Q101 qualified and explicitly designed for automotive use per its datasheet description. Key evidence includes 100% avalanche testing, operation up to T_j = 175°C, and validation under high di/dt (240 A/µs) and unclamped inductive load conditions per JEDEC standards.

What thermal interface material is recommended for TO-220 mounting?

A 0.1 mm thick thermally conductive silicone pad (≥1.5 W/m·K) or non-silicone ceramic-filled grease (≥3.0 W/m·K) is recommended. Mounting torque must be 0.5–0.7 N·m to ensure uniform pressure without tab deformation. An insulating washer (e.g., mica or polyimide) is required if the heatsink is grounded.

STP200NF04L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP200NF04L FAQ

1.How can I place an order for STP200NF04L through Aetrix?

Please submit a Request for Quotation (RFQ) for STP200NF04L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP200NF04L reliable?

The price and inventory of STP200NF04L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP200NF04L is usually 5 days.

3.What payment methods are accepted for STP200NF04L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP200NF04L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP200NF04L?

STP200NF04L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP200NF04L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP200NF04L?

For technical support, including STP200NF04L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP200NF04L requirements.

6.How does Aetrix verify that STP200NF04L is sourced from the original manufacturer or authorized distributors?

All STP200NF04L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP200NF04L meets industry standards.

7.What is the process for return or replacement of STP200NF04L?

All STP200NF04L units undergo pre-shipment inspection (PSI). If there is an issue with STP200NF04L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP200NF04L part is unused and in its original packaging.

Return procedure for STP200NF04L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…