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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP20N60M2-EP

Name: STP20N60M2-EP
Brand: STMicroelectronics
SKU: STP20N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP20N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP20N60M2-EP.pdf

Description:: MOSFET N-CHANNEL 600V 13A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:5,693

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Product details

Overview

STP20N60M2-EP from STMicroelectronics is an N-channel 600 V, 13 A Power MOSFET in TO-220 package, fabricated with MDmesh™ M2 EP technology. It delivers 0.230 Ω typ. R_DS(on), 22 nC total gate charge, and 7.2 µJ typ. turn-off energy at 2 A - optimized for >150 kHz high-frequency switching in SMPS and resonant converters.

For engineers reviewing the STP20N60M2-EP datasheet, STP20N60M2-EP pinout, STP20N60M2-EP application, or STP20N60M2-EP equivalent, key selection criteria include avalanche ruggedness (138 mJ E_AS), Zener-protected gate, low C_oss profile (50 pF), and 1.14 °C/W R_thj-case for thermal-limited high-power density designs.

Technical Context

This MOSFET employs a strip layout and enhanced vertical structure to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_gs ratio (10.5 nC / 3.5 nC) and 50 V/ns dv/dt ruggedness enable stable operation under fast transient conditions in hard-switched and ZVS topologies.

The device integrates a robust body diode with 230 ns trr at 25 °C and 287 ns at 150 °C, supporting synchronous rectification and LLC resonant applications. Its 100% avalanche-tested rating ensures reliability in unclamped inductive switching events up to 2.7 A repetitive I_AR.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V bus designs with 50% voltage margin for surge and ringing
R_DS(on) max	0.278 Ω - limits conduction loss to ≤9.4 W at 13 A continuous (T_C = 25 °C)
Q_g	22 nC - enables fast 10.5 ns t_d(on) and 41 ns t_d(off) with 4.7 Ω gate resistor
E_off	7.2 µJ @ 2 A - reduces switching loss by >40% vs legacy 600 V Superjunction MOSFETs
R_thj-case	1.14 °C/W - allows 110 W dissipation at T_C = 25 °C without derating
C_oss	50 pF - minimizes capacitive turn-on loss and improves light-load efficiency in resonant converters
dv/dt ruggedness	50 V/ns - sustains fast voltage transients without spurious turn-on in high-dV/dt environments

Pinout & Package

TO-220 package (Type A, ECOPACK® compliant) with isolated tab (Drain-connected). Mechanical outline per Figure 20 (DS11505 Rev 3), including mounting hole øP = 3.8 mm and creepage distance ≥4.0 mm.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to metal tab; requires insulating washer when mounted to heatsink
G (Pin 1)	Gate	High-impedance control terminal; ±25 V absolute max rating with integrated Zener protection
S (Pin 3)	Source	Power return path and gate reference; bonded to leadframe for low-inductance source loop

Key Features

Feature	Design Value
MDmesh™ M2 EP technology	Enables 0.230 Ω R_DS(on) at 600 V while maintaining <100 pF C_iss for high-frequency operation
Extremely low gate charge	22 nC total charge reduces driver power requirement and gate drive loss in 200–500 kHz converters
Optimized COSS profile	50 pF C_oss with flat voltage dependence improves ZVS soft-switching window in LLC and phase-shifted full-bridge
100% avalanche tested	Guarantees 138 mJ single-pulse E_AS and 2.7 A repetitive I_AR for robustness in flyback and PFC stages
Zener-protected gate	Integrated 25 V gate-body Zener clamps transients, eliminating need for external gate protection components

Applications

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW server power supply operating at 250 kHz using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus with 13 A peak current and 600 V blocking.

Use Value: Low E_off (7.2 µJ) and 50 V/ns dv/dt ruggedness prevent false triggering during fast voltage transitions across transformer leakage inductance.

Use Scenario: 10 kVA online UPS inverter stage requiring reliable 600 V/13 A switching with high thermal cycling endurance.

IC Role / Device Role / Timing Role: Output bridge switch in three-phase inverter driving motor loads with regenerative braking energy recovery.

Use Value: 100% avalanche-tested capability handles inductive kickback during fault shutdown; 1.14 °C/W R_thj-case supports forced-air cooling at 85 °C ambient.

Telecom Rectifier Module

EV Onboard Charger PFC

Use Scenario: 3 kW telecom rectifier module operating at 180 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch in primary side, subjected to repeated 480 V V_DS transitions and 13 A pulsed drain current.

Use Value: Low Q_gd/Q_gs ratio (3.0) suppresses Miller-induced shoot-through; 230 ns diode trr enables efficient synchronous rectification control.

Use Scenario: 6.6 kW OBC boost PFC stage operating at 120–150 kHz with wide input range (90–264 VAC).

IC Role / Device Role / Timing Role: Boost switch handling 600 V blocking and 13 A RMS current with high duty-cycle variation.

Use Value: Stable R_DS(on) over temperature (±15% from −55 to 150 °C) maintains consistent conduction loss across ambient and junction temperature swings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N60M2-EP	TO-247 package, same die, R_thj-case = 0.85 °C/W, higher cost, larger footprint	Better thermal performance in high-power (>150 W) convection-cooled systems	Select when junction temperature must stay below 125 °C at >100 W dissipation without forced air
IPP60R099C7	Infineon CoolMOS™ C7, 600 V/12 A, R_DS(on) = 0.099 Ω, Q_g = 34 nC, no integrated Zener	Lower R_DS(on) but higher gate charge increases driver loss above 200 kHz	Prefer for lower conduction-loss priority in <150 kHz designs; requires external gate protection

Compared with STW20N60M2-EP and IPP60R099C7, STP20N60M2-EP offers optimal balance of low switching loss (22 nC Q_g, 7.2 µJ E_off), integrated gate protection, and TO-220 cost-effectiveness for 100–300 kHz industrial SMPS where board space and thermal budget are constrained.

Availability

STP20N60M2-EP is available at Aetrix Electronics and suitable for server power supplies, industrial UPS inverters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for STP20N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 EP high-voltage Power MOSFET product line, engineered specifically for ultra-high-frequency switching power conversion with minimized conduction and switching loss trade-offs.

FAQ

Is STP20N60M2-EP suitable for zero-voltage switching (ZVS) topologies?

Yes. Its 50 pF C_oss, low Q_gd/Q_gs ratio (3.0), and 50 V/ns dv/dt ruggedness make it well-suited for LLC resonant and phase-shifted full-bridge converters. The flat C_oss vs. V_DS curve (Figure 7) ensures predictable ZVS timing across the operating voltage range.

What is the maximum recommended gate resistor value for hard-switched 200 kHz operation?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6) for 200 kHz operation with 7.2 µJ E_off at 2 A. Increasing beyond 10 Ω raises t_d(off) and tf, risking overlap loss; values below 2.2 Ω require careful PCB layout to avoid gate oscillation due to 5.9 Ω intrinsic R_G.

Does the body diode support synchronous rectification in continuous conduction mode (CCM)?

Yes. With 230 ns trr at 25 °C and 2.3 µC Q_rr, the body diode supports CCM operation up to ~150 kHz in buck-derived topologies. At 150 °C, trr extends to 287 ns, requiring gate timing adjustment to avoid cross-conduction in synchronous FET control.

Can STP20N60M2-EP replace STP20NM60FD in existing designs?

No. STP20NM60FD is a Fast Diode variant with 35 ns trr and different R_DS(on) (0.30 Ω typ.). STP20N60M2-EP has slower diode recovery (230 ns) but lower R_DS(on) (0.230 Ω) and superior switching loss - suitable only where diode speed is not critical, e.g., in hard-switched PFC rather than synchronous rectification.

STP20N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP20N60M2-EP FAQ

1.How can I place an order for STP20N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP20N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP20N60M2-EP reliable?

The price and inventory of STP20N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20N60M2-EP is usually 5 days.

3.What payment methods are accepted for STP20N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP20N60M2-EP?

STP20N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP20N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP20N60M2-EP?

For technical support, including STP20N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20N60M2-EP requirements.

6.How does Aetrix verify that STP20N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STP20N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20N60M2-EP meets industry standards.

7.What is the process for return or replacement of STP20N60M2-EP?

All STP20N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STP20N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP20N60M2-EP part is unused and in its original packaging.

Return procedure for STP20N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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