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STMicroelectronics STP20N65M5
- Part No.:
- STP20N65M5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP20N65M5.pdf
- Description:
- MOSFET N-CH 650V 18A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:939
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Product details
Overview
STP20N65M5 from STMicroelectronics is an N-channel 650 V, 18 A Power MOSFET in TO-220 package, based on MDmesh M5 vertical process technology. It delivers 160 mΩ typical RDS(on), 15 V/ns dv/dt capability, 100% avalanche tested performance, and supports high-efficiency switching in offline SMPS and PFC stages.
For engineers reviewing the STP20N65M5 datasheet, STP20N65M5 pinout, STP20N65M5 application, or STP20N65M5 equivalent, key selection criteria include its 650 V VDSS, 160 mΩ RDS(on) at 10 VGS, 72 A pulsed drain current, 130 W power dissipation, and robust 270 mJ single-pulse avalanche energy rating.
Technical Context
This device uses ST's MDmesh M5 silicon process to achieve ultra-low on-resistance while maintaining high voltage blocking. Its optimized charge characteristics-36 nC total gate charge, 18 nC Qgd, and 7.5 nC Qgs-enable fast, low-loss switching with minimal Miller effect.
The integrated body diode exhibits 288 ns reverse recovery time (TJ = 25 °C), 4 µC Qrr, and 1.5 V forward voltage at 18 A, supporting hard-switched and resonant topologies where diode performance impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Enables use in universal-input 85–265 V AC offline converters without derating. |
| RDS(on) typ. | 160 mΩ at VGS = 10 V, ID = 9 A - Reduces conduction loss in 15–20 A continuous power stages. |
| ID (TC = 25 °C) | 18 A - Supports high-current DC-DC and PFC designs with standard heatsinking. |
| EAS | 270 mJ - Withstands unclamped inductive switching events in motor drives and UPS systems. |
| dv/dt rating | 15 V/ns - Resists false turn-on in high-noise industrial environments and fast-switching converters. |
| Qg | 36 nC - Enables efficient gate drive with <1 W average power at 100 kHz switching. |
| tr, tf | 7.5 ns each - Minimizes switching transition losses in >100 kHz hard-switched topologies. |
Pinout & Package
STP20N65M5 is housed in a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when referenced to non-drain potentials.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance control input; requires ≤±25 V drive; sensitive to ESD and ringing. |
| 2 (Middle) | Drain (D) | Main high-voltage power path; connected to tab; must be isolated from heatsink unless system ground referenced. |
| 3 (Right) | Source (S) | Power return and gate reference node; carries full load current and di/dt-induced noise. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh M5 process | Enables 650 V rating with 160 mΩ RDS(on), reducing die size and thermal resistance vs. prior generations. |
| 100% avalanche rated | Guarantees ruggedness under unclamped inductive switching-no derating needed for flyback or LLC primary side. |
| Low Qgd/Qg ratio | 0.5 (18/36 nC) - Improves immunity to Miller-induced shoot-through in half-bridge configurations. |
| Optimized body diode | 288 ns trr and soft recovery profile - Lowers EMI and reduces snubber losses in bridge-leg operation. |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements without compromising thermal or electrical performance. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 3 kW three-phase inverter stage operating at 16 kHz PWM frequency with active cooling. IC Role / Device Role / Timing Role: High-side N-channel switch in IGBT gate-drive compatible topology; handles 18 A RMS phase current. Use Value: 160 mΩ RDS(on) cuts conduction loss by ~22% versus legacy 600 V MOSFETs, improving system efficiency from 96.1% to 96.7%. |
Use Scenario: Active clamp forward or LLC resonant converter in 1U server power supply (1+1 redundancy). IC Role / Device Role / Timing Role: Primary-side main switch handling 400 V DC bus and 12 A peak current at 300 kHz. Use Value: 36 nC Qg and 7.5 ns rise/fall times enable ZVS-assisted switching with <1.2 W gate drive loss per device. |
| Telecom Rectifier Modules | EV Onboard Charger PFC |
|
Use Scenario: 3 kW telecom rectifier with boost PFC front-end operating at 100 kHz and 230 V AC input. IC Role / Device Role / Timing Role: Boost switch managing 15 A average inductor current and 650 V blocking duty. Use Value: 270 mJ EAS withstands line surges and transient overloads without failure, eliminating need for external clamping. |
Use Scenario: Two-phase interleaved boost PFC stage in 6.6 kW OBC, operating at 65 kHz with 18 A per phase. IC Role / Device Role / Timing Role: High-voltage switching element in critical conduction mode (CrCM) boost circuit. Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions across transformer leakage inductance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20N65M5 | Same silicon, D²PAK package; lower RthJC (0.96 °C/W vs. 1.2 °C/W), no isolation tab. | Better thermal performance in PCB-mounted, space-constrained designs; unsuitable where mechanical isolation required. | Select when board-level thermal management dominates over mechanical mounting constraints. |
| IPW65R041CFD7 | 650 V, 41 mΩ, TO-247; higher cost, superior RDS(on), but 62 nC Qg and larger footprint. | Preferred in high-efficiency, low-frequency (<65 kHz) industrial PSUs where conduction loss dominates. | Choose only if system efficiency gain justifies 2.3× gate drive power increase and layout rework. |
Compared with STW20N65M5 and IPW65R041CFD7, STP20N65M5 offers optimal balance of cost, thermal interface simplicity (TO-220 with isolating washer), and mid-frequency switching capability-making it ideal for volume telecom and industrial SMPS where BOM and assembly cost are prioritized.
Availability
STP20N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, server PSUs, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturability.
Supply support for STP20N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STP20N65M5 belongs to the MDmesh™ M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V offline power conversion systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STP20N65M5 supports 11.3 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS8921 Rev 3. This rating accounts for thermal derating due to junction-to-case resistance (1.2 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load.
Is the TO-220 tab electrically isolated from the leads?
No-the metal tab of the STP20N65M5 TO-220 package is internally connected to the drain terminal (Pin 2). It must be electrically isolated from the heatsink using a mica or polymer insulator and shoulder washer to prevent short circuits in grounded-heatsink configurations.
Does STP20N65M5 require negative gate turn-off voltage?
No-STP20N65M5 is fully characterized for 0 V to +10 V gate drive and does not require negative turn-off bias. Its gate threshold voltage (3–5 V) and low Qgd ensure clean turn-off with zero-volt gate drive; negative voltage adds no reliability benefit and risks exceeding ±25 V absolute maximum rating.
How is avalanche ruggedness validated for this part?
Each STP20N65M5 unit undergoes 100% production avalanche testing per JEDEC JESD22-A116, applying repetitive unclamped inductive switching at IAR = 4 A and EAS = 270 mJ. Test conditions replicate worst-case energy stress in real-world PFC and flyback circuits, ensuring guaranteed single-pulse survival without parameter shift.
STP20N65M5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ V
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1345 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP20N65M5 FAQ
1.How can I place an order for STP20N65M5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP20N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP20N65M5 reliable?
The price and inventory of STP20N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20N65M5 is usually 5 days.
3.What payment methods are accepted for STP20N65M5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20N65M5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP20N65M5?
STP20N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP20N65M5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP20N65M5?
For technical support, including STP20N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20N65M5 requirements.
6.How does Aetrix verify that STP20N65M5 is sourced from the original manufacturer or authorized distributors?
All STP20N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20N65M5 meets industry standards.
7.What is the process for return or replacement of STP20N65M5?
All STP20N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP20N65M5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP20N65M5 part is unused and in its original packaging.
Return procedure for STP20N65M5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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