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STMicroelectronics STP20N95K5

Part No.:
STP20N95K5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP20N95K5.pdf
Description:
MOSFET N-CH 950V 17.5A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:886

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Product details

Overview

STP20N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, designed for switching applications requiring 950 V blocking capability, 275 mΩ typical RDS(on), and 17.5 A continuous drain current at TC = 25 °C. It features ultra-low gate charge (48 nC), Zener-protected gate, and 100% avalanche tested performance - deployed in industrial AC-DC converters and high-efficiency HV offline SMPS.

For engineers reviewing the STP20N95K5 datasheet, STP20N95K5 pinout, STP20N95K5 application, or STP20N95K5 equivalent, key selection criteria include its 950 V VDS, 275 mΩ RDS(on) at 10 V VGS, 48 nC total gate charge, 100% unclamped avalanche rating (EAS = 200 mJ), and TO-220 package thermal resistance (RthJC = 0.5 °C/W).

Technical Context

This device implements a proprietary vertical MDmesh K5 structure to minimize conduction and switching losses simultaneously. Its low FoM (RDS(on) × Qg = 13.2 Ω·nC) enables high power density in hard-switched topologies operating up to 100 kHz.

The integrated Zener-protected gate ensures robustness against transient overvoltage, while the 100% avalanche testing guarantees reliable operation under inductive load turn-off stress. Diode recovery characteristics (trr = 513 ns, Qrr = 12 µC at TJ = 25 °C) support snubberless flyback and resonant converter designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 950 V - supports 800 V DC bus designs with 150 V margin for voltage spikes in offline SMPS.
RDS(on) max 330 mΩ - limits conduction loss to ≤10.3 W at 17.5 A, enabling compact heatsink sizing.
Qg 48 nC - reduces gate drive power requirement and enables use with low-current drivers (e.g., 100 mA peak).
EAS 200 mJ - sustains single-pulse inductive energy without failure, critical for relay driving and motor control.
trr 513 ns - minimizes diode reverse recovery loss and EMI in discontinuous conduction mode (DCM) flyback.
RthJC 0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above case, supporting high-power TO-220 layouts.
VGS(th) 3–5 V - ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers without level shifting.

Pinout & Package

STP20N95K5 is housed in a through-hole TO-220 package with isolated tab (pin 2 connected to drain). The package provides mechanical robustness and direct heatsink mounting via the metal tab, with RthJC = 0.5 °C/W for efficient thermal transfer.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls channel conduction; requires ≤±30 V drive; Zener-protected to ±20 V.
2 (D / TAB) Drain / Heat Sink Interface Main high-voltage terminal; electrically connected to metal tab; must be insulated from chassis if floating.
3 (S) Source Power return path and gate reference; connects to PCB ground plane for low-inductance layout.

Key Features

Feature Design Value
Ultra-low gate charge 48 nC enables fast switching with minimal driver loss and reduced EMI generation.
Zener-protected gate Integrated ±20 V clamp prevents gate oxide rupture during layout transients or hot-plug events.
100% avalanche tested Every unit validated for 200 mJ single-pulse avalanche energy - no derating required in inductive turn-off.
MDmesh K5 vertical structure Reduces RDS(on) by ~35% vs prior K3 generation while maintaining 950 V rating and rugged dv/dt immunity.
Low Crss (1 pF) Minimizes Miller effect, improving noise immunity and enabling stable operation at high dv/dt (50 V/ns).

Applications

Industrial AC-DC Converters High-Voltage Flyback SMPS

Use Scenario: Primary-side switch in 300–500 W universal-input offline power supplies feeding PLC I/O modules.

IC Role / Device Role / Timing Role: High-side main switch operating in DCM/CCM with 65–100 kHz switching frequency.

Use Value: 950 V rating accommodates 400 V rectified line + 150 V surge; 275 mΩ RDS(on) keeps conduction loss below 8 W at full load.

Use Scenario: Primary switch in medical-grade isolated 24 V/5 A flyback supply with reinforced insulation.

IC Role / Device Role / Timing Role: Hard-switched power transistor with zero-voltage switching (ZVS) assist via leakage inductance.

Use Value: 513 ns trr and low Qrr reduce turn-off loss and enable clean ZVS transition without external snubbers.

Motor Drive Protection Stage High-Power Relay & Solenoid Driver

Use Scenario: DC bus protection switch in 3-phase inverter drives for HVAC compressors (400–690 V AC input).

IC Role / Device Role / Timing Role: Fast-acting crowbar or pre-charge/disconnect switch handling 17.5 A continuous fault current.

Use Value: 200 mJ EAS rating absorbs inductive kickback from contactor coils without failure during emergency shutdown.

Use Scenario: Solid-state replacement for electromechanical relays controlling 240 VAC resistive loads (e.g., heating elements).

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switching element with <10 ms on-time per actuation.

Use Value: 950 V VDS exceeds 2× peak AC line voltage (≈340 V), eliminating need for series stacking or voltage clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STW20N95K5 Same die, TO-247 package with lower RthJC (0.3 °C/W vs 0.5 °C/W) and higher PTOT (250 W vs 40 W). Suitable for >100 W continuous conduction where forced-air cooling or large heatsinks are available. Select when thermal headroom is constrained and board space permits larger TO-247 footprint.
IXTH20N90L2 900 V rating, 320 mΩ RDS(on), 42 nC Qg, no integrated Zener protection. Requires external gate protection circuitry; better suited for resonant LLC where dv/dt stress is lower. Choose only if gate drive design includes discrete Zener clamping and system operates below 760 V DC bus.

Compared with STP20N95K5, STW20N95K5 offers superior thermal performance but larger footprint, while IXTH20N90L2 trades 50 V voltage margin and gate protection for slightly lower Qg - making STP20N95K5 optimal for cost-sensitive, space-constrained 950 V hard-switched designs needing built-in robustness.

Availability

STP20N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC converters, high-voltage flyback SMPS, and motor drive protection stages requiring stable component supply across multi-year production cycles.

Supply support for STP20N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STP20N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion systems operating up to 950 V.

FAQ

What is the maximum safe operating temperature for STP20N95K5?

The STP20N95K5 has an operating junction temperature range of –55 °C to +150 °C. For reliable long-term operation, keep TJ ≤ 130 °C under continuous load. With RthJC = 0.5 °C/W and 40 W PTOT, this requires case temperature ≤ 65 °C - achievable using a 15 cm² aluminum heatsink with thermal interface material and natural convection.

Does STP20N95K5 require external gate protection?

No - STP20N95K5 integrates a bidirectional Zener diode between gate and source, rated for ±20 V clamping. This eliminates the need for external gate protection components in most applications, provided gate drive voltage stays within ±30 V absolute maximum ratings and layout avoids excessive inductance in gate loop.

Can STP20N95K5 replace STP16NF90 in existing designs?

Yes, with caveats: STP20N95K5 offers higher VDS (950 V vs 900 V), lower RDS(on) (275 mΩ vs 350 mΩ typ.), and lower Qg (48 nC vs 55 nC), but uses the same TO-220 package and pinout. Verify that gate drive strength and PCB thermal relief accommodate the higher peak current (70 A IDM) and improved efficiency.

How is avalanche ruggedness verified for STP20N95K5?

Each STP20N95K5 unit undergoes 100% production avalanche testing per JEDEC JESD22-A116. Testing applies 6 A repetitive avalanche current at VDD = 50 V, measuring EAS = 200 mJ at TJ = 25 °C - confirming robustness under unclamped inductive switching stress without parameter shift or parametric failure.

STP20N95K5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH5™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
950 V
Current - Continuous Drain (Id) @ 25°C:
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP20N95K5 FAQ

1.How can I place an order for STP20N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP20N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP20N95K5 reliable?

The price and inventory of STP20N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20N95K5 is usually 5 days.

3.What payment methods are accepted for STP20N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP20N95K5?

STP20N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP20N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP20N95K5?

For technical support, including STP20N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20N95K5 requirements.

6.How does Aetrix verify that STP20N95K5 is sourced from the original manufacturer or authorized distributors?

All STP20N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20N95K5 meets industry standards.

7.What is the process for return or replacement of STP20N95K5?

All STP20N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP20N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP20N95K5 part is unused and in its original packaging.

Return procedure for STP20N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STP20N95K5 Tags

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