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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP20NE06L

Name: STP20NE06L
Brand: STMicroelectronics
SKU: STP20NE06L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP20NE06L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP20NE06L.pdf

Description:: MOSFET N-CH 60V 20A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,709

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Product details

Overview

STP20NE06L from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 60 V V_DS, 20 A continuous drain current at T_c = 25 °C, and typical R_DS(on) of 0.06 Ω at V_GS = 10 V. It features 100% avalanche tested ruggedness, low gate charge (14 nC), and exceptional dv/dt capability (7 V/ns), enabling robust operation in high-speed switching power stages such as synchronous rectifiers and DC-DC converters.

For engineers reviewing the STP20NE06L datasheet, STP20NE06L pinout, STP20NE06L application, or STP20NE06L equivalent, key selection criteria include its 60 V breakdown voltage, 0.06 Ω on-resistance at 10 V gate drive, 20 A thermal-limited continuous current, avalanche energy rating (E_AS = 100 mJ), and TO-220 mechanical compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, delivering high cell density for low R_DS(on) and improved manufacturing reproducibility. Its gate threshold voltage (V_GS(th)) is 1 V (min), enabling reliable turn-on with 5 V logic-level drive.

The device integrates a fast, low-loss body diode with t_rr = 65 ns (typ) and Q_rr = 130 nC (typ) at T_j = 150 °C, supporting efficient synchronous rectification and hard-switched inductive load control without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with margin.
R_DS(on)	0.06 Ω (typ) at V_GS = 10 V - Enables <1.2 W conduction loss at 20 A, reducing thermal stress.
I_D (cont)	20 A at T_c = 25 °C - Continuous current rating under ideal heatsink conditions.
Q_g	14 nC (typ) - Low total gate charge reduces driver power and switching transition time.
E_AS	100 mJ - Single-pulse avalanche energy rating confirms ruggedness in unclamped inductive switching.
dv/dt	7 V/ns - High immunity to false triggering during fast voltage transients in motor drives.
t_rr	65 ns (typ) - Fast body diode recovery minimizes switching losses in synchronous rectifier topologies.

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤±20 V drive; 14 nC total charge demands moderate-strength gate driver.
Pin 2	Drain (Tab)	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground.
Pin 3	Source	Return path for load current; serves as reference for gate drive; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees minimum 100 mJ single-pulse energy handling without parametric shift or failure.
Low R_DS(on) × Q_g Figure of Merit	0.84 Ω·nC - Balances conduction and switching losses for high-efficiency SMPS designs.
StripFET™ II Process	Enables uniform cell layout and tight R_DS(on) distribution (±15%), improving parallelability and yield.
High dv/dt Immunity	7 V/ns rating prevents spurious turn-on during fast transient events in motor control and inverters.

Applications

DC Motor Control

DC-DC Converters

Use Scenario: H-bridge driver for 24–48 V brushed DC motors in industrial actuators and robotics.

IC Role / Device Role / Timing Role: High-side/low-side switching element controlling bidirectional current flow and PWM speed regulation.

Use Value: 0.06 Ω R_DS(on) limits I²R loss to <2.4 W at 20 A, enabling compact thermal design without forced air.

Use Scenario: Primary-side switch in non-isolated buck converters powering FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with gate charge optimized for low driver loss.

Use Value: 14 nC Q_g allows use of low-cost SOT-23 gate drivers (e.g., STMicro VIPer series) without bootstrapping complexity.

Synchronous Rectification

Power Supply Protection

Use Scenario: Secondary-side switch replacing Schottky diode in 12 V output stage of telecom AC-DC front-end.

IC Role / Device Role / Timing Role: Active rectifier synchronized to primary-side switching to reduce forward voltage drop.

Use Value: Body diode t_rr = 65 ns enables clean commutation at 100–300 kHz, cutting conduction loss by >40% vs. 40 V Schottky.

Use Scenario: Electronic fuse or hot-swap controller in 48 V server backplane power distribution.

IC Role / Device Role / Timing Role: Current-controlled pass element with avalanche-rated fault tolerance during short-circuit events.

Use Value: 100 mJ E_AS withstands >10 ms overcurrent pulses without destruction, supporting Class 2 fault response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44N	R_DS(on) = 0.028 Ω (typ) at V_GS = 10 V; Q_g = 67 nC; no avalanche rating specified.	Lower conduction loss but higher switching loss; unsuitable for unclamped inductive loads without snubbers.	Prefer when gate drive strength is high and avalanche stress is absent; avoid in motor control without protection.
STP16NF06	R_DS(on) = 0.07 Ω (typ); I_D = 16 A; same TO-220 package; identical avalanche testing.	Near-identical ruggedness and thermal behavior; lower current rating suits space-constrained 12–24 V systems.	Select when 16 A suffices and board layout reuses STP20NE06L footprint; simplifies BOM consolidation.

Compared with IRFZ44N, STP20NE06L trades 2× higher R_DS(on) for 100% avalanche qualification and 4.8× lower Q_g, making it more suitable for reliability-critical 48 V motor and converter applications; versus STP16NF06, it delivers +25% current headroom while maintaining identical ruggedness and thermal interface.

Availability

STP20NE06L is available at Aetrix Electronics and suitable for DC motor control, DC-DC converters, and synchronous rectification applications requiring stable component supply and long-term industrial availability.

Supply support for STP20NE06L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STP20NE06L belongs to ST's Power MOSFET product line, engineered specifically for high-reliability, medium-power switching applications where avalanche ruggedness, thermal stability, and gate-drive simplicity are essential.

FAQ

Is STP20NE06L logic-level compatible?

No. STP20NE06L has a gate threshold voltage (V_GS(th)) of 1 V (min), but its R_DS(on) is fully specified only at V_GS = 10 V. At 5 V drive, R_DS(on) rises to ~0.085 Ω (max), increasing conduction loss significantly. It is not classified as a true logic-level MOSFET and requires a 10 V gate driver for optimal performance.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation should be limited to T_j ≤ 150 °C for long-term reliability. With R_thj-case = 2.14 °C/W and P_tot = 70 W at T_c = 25 °C, derating begins at 0.47 W/°C above 25 °C case temperature - requiring active heatsinking for sustained 20 A loads.

Can STP20NE06L be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed by normalized R_DS(on) vs. temperature curves) ensures inherent current sharing. However, matched gate drive impedance and symmetrical PCB layout (equal trace length/inductance per device) are mandatory to prevent dynamic imbalance during switching transitions.

Does STP20NE06L have built-in ESD protection?

No. The device lacks integrated gate protection diodes. External Zener clamping (e.g., 15 V TVS between gate and source) is strongly recommended to prevent gate oxide damage during handling or system-level ESD events, especially in automated assembly environments.

STP20NE06L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP20NE06L FAQ

1.How can I place an order for STP20NE06L through Aetrix?

Please submit a Request for Quotation (RFQ) for STP20NE06L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP20NE06L reliable?

The price and inventory of STP20NE06L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20NE06L is usually 5 days.

3.What payment methods are accepted for STP20NE06L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20NE06L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP20NE06L?

STP20NE06L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP20NE06L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP20NE06L?

For technical support, including STP20NE06L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20NE06L requirements.

6.How does Aetrix verify that STP20NE06L is sourced from the original manufacturer or authorized distributors?

All STP20NE06L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20NE06L meets industry standards.

7.What is the process for return or replacement of STP20NE06L?

All STP20NE06L units undergo pre-shipment inspection (PSI). If there is an issue with STP20NE06L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP20NE06L part is unused and in its original packaging.

Return procedure for STP20NE06L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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