STMicroelectronics STP20NM50
- Part No.:
- STP20NM50
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP20NM50.pdf
- Description:
- MOSFET N-CH 500V 20A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:774
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Product details
Overview
STP20NM50 from STMicroelectronics is an N-channel 500 V, 20 A Power MOSFET in TO-220 package, built on MDmesh™ II technology with 250 mΩ max RDS(on), 40–56 nC total gate charge, and 100% avalanche tested. It delivers low conduction and switching losses for high-efficiency AC-DC and DC-DC converters operating at 50–100 kHz.
For engineers reviewing the STP20NM50 datasheet, STP20NM50 pinout, STP20NM50 application, or STP20NM50 equivalent, key selection criteria include its 500 V VDS, 192 W PTOT at TC = 25 °C, 0.65 °C/W RthJC, 15 V/ns dv/dt capability, and integrated source-drain diode with 350 ns trr and 4.6 µC Qrr.
Technical Context
This MOSFET uses ST's second-generation MDmesh vertical strip architecture to minimize both RDS(on) and gate charge-achieving 200 mΩ typ. at VGS = 10 V and 10 A, while maintaining robust 500 V breakdown voltage. Its low Ciss (1480 pF) and Crss (34 pF) support fast, low-loss hard-switching.
The device integrates a fast-recovery body diode rated for 20 A continuous and 80 A pulsed source-drain current, with trr = 350 ns and Qrr = 4.6 µC at TJ = 25 °C. Avalanche ruggedness is validated to 10 A repetitive IAR and 650 mJ EAS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin |
| RDS(on) max | 250 mΩ - enables <1.25 W conduction loss at 20 A, reducing heatsink requirements |
| Qg | 40–56 nC - determines gate drive power and switching speed in 50–100 kHz converters |
| tr/tf | 16 ns / 12 ns - supports clean, low-EMI turn-on/turn-off with minimal cross-conduction risk |
| RthJC | 0.65 °C/W - allows 192 W dissipation with ≤125 °C junction rise over case, enabling compact thermal design |
| EAS | 650 mJ - sustains unclamped inductive switching events without failure in flyback or LLC resonant circuits |
| dv/dt | 15 V/ns - ensures reliable operation under high-slew-rate conditions in high-frequency topologies |
Pinout & Package
TO-220 package (Type A), 3-pin, through-hole, isolated tab (drain-connected). Case temperature measurement point located at mounting surface of tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance control terminal; requires 10 V drive for full enhancement; Rg = 1.6 Ω limits ringing |
| 2 (Center) | Drain (D) | High-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential |
| 3 (Right) | Source (S) | Power return path and gate reference; ties to PCB ground plane; carries full load current and diode recovery current |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg figure-of-merit by >30% vs. planar MOSFETs, improving efficiency in high-frequency SMPS |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 650 mJ and repetitive IAR ≥ 10 A-critical for reliability in flyback snubberless designs |
| Low Ciss and Crss | 1480 pF input capacitance and 34 pF reverse transfer capacitance minimize Miller effect and enable stable gate drive |
| Fast body diode | 350 ns reverse recovery time and 4.6 µC Qrr reduce switching loss and voltage overshoot during synchronous rectification or freewheeling |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements without compromising thermal or electrical performance |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge high-side switch in 1–3 kW industrial inverters driving BLDC motors at 8–16 kHz PWM. IC Role / Device Role / Timing Role: Main power switch handling 400 V DC bus, delivering 20 A RMS output with forced-air cooling. Use Value: Low RDS(on) and 192 W PTOT allow direct mounting on aluminum chassis without auxiliary heatsink; 15 V/ns dv/dt rating prevents false turn-on during commutation. |
Use Scenario: Primary-side switch in 80+ Gold-rated 1.5 kW server power supply using active-clamp forward topology. IC Role / Device Role / Timing Role: Hard-switched 100 kHz power transistor managing 500 V transient surges and 20 A peak drain current. Use Value: 650 mJ EAS withstands clamping energy spikes; 40 nC Qg enables efficient gate driving with low-power ICs like UCC27324. |
| Telecom Rectifier Modules | EV Onboard Charger PFC Stage |
|
Use Scenario: Boost PFC switch in -48 V telecom rectifier modules operating continuously at 65 °C ambient. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch handling 380 V DC link and 12.6 A continuous current at TC = 100 °C. Use Value: RthJC = 0.65 °C/W enables thermal management with minimal heatsink volume; 10 µA IDSS at 125 °C ensures low standby leakage. |
Use Scenario: Interleaved boost switch in 6.6 kW OBC PFC stage, switching at 70 kHz with 400 V nominal input. IC Role / Device Role / Timing Role: High-reliability main switch subjected to repeated unclamped inductive stress during grid transients. Use Value: 100% avalanche testing and 650 mJ EAS eliminate need for external snubbers; low Qgd/Qgs ratio improves ZVS transition margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STB20NM50T4 | D²PAK (TO-263) package; identical RDS(on), Qg, and avalanche rating; lower RthJC (0.55 °C/W) | Better suited for automated SMT assembly and higher power density layouts; requires reflow-compatible PCB footprint | Select when board space is constrained and thermal interface to heatsink is optimized via soldered tab |
| IPP60R280P7XKSA1 (Infineon) | 600 V rating; 280 mΩ RDS(on); 39 nC Qg; CoolMOS™ P7 technology; no 100% avalanche test guarantee | Higher voltage margin but higher conduction loss; optimized for >100 kHz operation with lower Coss | Prefer for designs requiring >500 V derating headroom or targeting >120 kHz switching, accepting trade-off in RDS(on) |
Compared with STB20NM50T4, STP20NM50 offers through-hole assembly flexibility and identical electrical specs but higher RthJC; versus IPP60R280P7XKSA1, it provides superior avalanche ruggedness and lower RDS(on) at 500 V, making it more suitable for cost-sensitive, thermally demanding 50–100 kHz industrial supplies.
Availability
STP20NM50 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STP20NM50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STP20NM50 belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications-including server PSUs, industrial SMPS, and telecom infrastructure-where low RDS(on) × Qg and avalanche robustness are critical.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STP20NM50 supports 12.6 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS2216 Rev 14. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within SOA boundaries when heatsinked appropriately.
Is the body diode suitable for synchronous rectification?
No-the integrated body diode has 350 ns reverse recovery time and 4.6 µC Qrr, making it unsuitable for synchronous rectification above ~50 kHz. It is designed for freewheeling and clamping, not high-frequency bidirectional conduction; external Schottky or SiC diodes are recommended for SR.
Does STP20NM50 require gate resistors for stability?
Yes-a series gate resistor (typically 4.7–10 Ω) is required to dampen ringing caused by Lg–Ciss resonance and prevent spurious turn-on due to dv/dt coupling. The 1.6 Ω intrinsic gate resistance is insufficient alone; layout parasitics necessitate external damping per Figure 12 and 17 in DS2216.
Can STP20NM50 replace STP16NF50 in existing designs?
Only with validation: STP20NM50 has lower RDS(on) (250 mΩ vs. 320 mΩ), higher Qg (40–56 nC vs. 34 nC), and improved avalanche rating (650 mJ vs. 420 mJ). Gate drive strength and SOA margins must be rechecked; layout changes may be needed to manage increased switching energy.
STP20NM50 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 192W (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP20NM50 FAQ
1.How can I place an order for STP20NM50 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP20NM50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP20NM50 reliable?
The price and inventory of STP20NM50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20NM50 is usually 5 days.
3.What payment methods are accepted for STP20NM50?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20NM50 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP20NM50?
STP20NM50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP20NM50 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP20NM50?
For technical support, including STP20NM50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20NM50 requirements.
6.How does Aetrix verify that STP20NM50 is sourced from the original manufacturer or authorized distributors?
All STP20NM50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20NM50 meets industry standards.
7.What is the process for return or replacement of STP20NM50?
All STP20NM50 units undergo pre-shipment inspection (PSI). If there is an issue with STP20NM50, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP20NM50 part is unused and in its original packaging.
Return procedure for STP20NM50:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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