Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STP20NM50

Part No.:
STP20NM50
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP20NM50.pdf
Description:
MOSFET N-CH 500V 20A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:774

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STP20NM50 from STMicroelectronics is an N-channel 500 V, 20 A Power MOSFET in TO-220 package, built on MDmesh™ II technology with 250 mΩ max RDS(on), 40–56 nC total gate charge, and 100% avalanche tested. It delivers low conduction and switching losses for high-efficiency AC-DC and DC-DC converters operating at 50–100 kHz.

For engineers reviewing the STP20NM50 datasheet, STP20NM50 pinout, STP20NM50 application, or STP20NM50 equivalent, key selection criteria include its 500 V VDS, 192 W PTOT at TC = 25 °C, 0.65 °C/W RthJC, 15 V/ns dv/dt capability, and integrated source-drain diode with 350 ns trr and 4.6 µC Qrr.

Technical Context

This MOSFET uses ST's second-generation MDmesh vertical strip architecture to minimize both RDS(on) and gate charge-achieving 200 mΩ typ. at VGS = 10 V and 10 A, while maintaining robust 500 V breakdown voltage. Its low Ciss (1480 pF) and Crss (34 pF) support fast, low-loss hard-switching.

The device integrates a fast-recovery body diode rated for 20 A continuous and 80 A pulsed source-drain current, with trr = 350 ns and Qrr = 4.6 µC at TJ = 25 °C. Avalanche ruggedness is validated to 10 A repetitive IAR and 650 mJ EAS.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
RDS(on) max 250 mΩ - enables <1.25 W conduction loss at 20 A, reducing heatsink requirements
Qg 40–56 nC - determines gate drive power and switching speed in 50–100 kHz converters
tr/tf 16 ns / 12 ns - supports clean, low-EMI turn-on/turn-off with minimal cross-conduction risk
RthJC 0.65 °C/W - allows 192 W dissipation with ≤125 °C junction rise over case, enabling compact thermal design
EAS 650 mJ - sustains unclamped inductive switching events without failure in flyback or LLC resonant circuits
dv/dt 15 V/ns - ensures reliable operation under high-slew-rate conditions in high-frequency topologies

Pinout & Package

TO-220 package (Type A), 3-pin, through-hole, isolated tab (drain-connected). Case temperature measurement point located at mounting surface of tab.

Pin/Terminal Circuit Role Design Meaning
1 (Left) Gate (G) High-impedance control terminal; requires 10 V drive for full enhancement; Rg = 1.6 Ω limits ringing
2 (Center) Drain (D) High-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential
3 (Right) Source (S) Power return path and gate reference; ties to PCB ground plane; carries full load current and diode recovery current

Key Features

Feature Design Value
MDmesh™ II vertical structure Reduces RDS(on) × Qg figure-of-merit by >30% vs. planar MOSFETs, improving efficiency in high-frequency SMPS
100% avalanche tested Guarantees single-pulse EAS ≥ 650 mJ and repetitive IAR ≥ 10 A-critical for reliability in flyback snubberless designs
Low Ciss and Crss 1480 pF input capacitance and 34 pF reverse transfer capacitance minimize Miller effect and enable stable gate drive
Fast body diode 350 ns reverse recovery time and 4.6 µC Qrr reduce switching loss and voltage overshoot during synchronous rectification or freewheeling
ECOPACK® compliant Meets RoHS and halogen-free requirements without compromising thermal or electrical performance

Applications

Industrial Motor Drives Server PSU Primary Switch

Use Scenario: Half-bridge high-side switch in 1–3 kW industrial inverters driving BLDC motors at 8–16 kHz PWM.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC bus, delivering 20 A RMS output with forced-air cooling.

Use Value: Low RDS(on) and 192 W PTOT allow direct mounting on aluminum chassis without auxiliary heatsink; 15 V/ns dv/dt rating prevents false turn-on during commutation.

Use Scenario: Primary-side switch in 80+ Gold-rated 1.5 kW server power supply using active-clamp forward topology.

IC Role / Device Role / Timing Role: Hard-switched 100 kHz power transistor managing 500 V transient surges and 20 A peak drain current.

Use Value: 650 mJ EAS withstands clamping energy spikes; 40 nC Qg enables efficient gate driving with low-power ICs like UCC27324.

Telecom Rectifier Modules EV Onboard Charger PFC Stage

Use Scenario: Boost PFC switch in -48 V telecom rectifier modules operating continuously at 65 °C ambient.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch handling 380 V DC link and 12.6 A continuous current at TC = 100 °C.

Use Value: RthJC = 0.65 °C/W enables thermal management with minimal heatsink volume; 10 µA IDSS at 125 °C ensures low standby leakage.

Use Scenario: Interleaved boost switch in 6.6 kW OBC PFC stage, switching at 70 kHz with 400 V nominal input.

IC Role / Device Role / Timing Role: High-reliability main switch subjected to repeated unclamped inductive stress during grid transients.

Use Value: 100% avalanche testing and 650 mJ EAS eliminate need for external snubbers; low Qgd/Qgs ratio improves ZVS transition margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STB20NM50T4 D²PAK (TO-263) package; identical RDS(on), Qg, and avalanche rating; lower RthJC (0.55 °C/W) Better suited for automated SMT assembly and higher power density layouts; requires reflow-compatible PCB footprint Select when board space is constrained and thermal interface to heatsink is optimized via soldered tab
IPP60R280P7XKSA1 (Infineon) 600 V rating; 280 mΩ RDS(on); 39 nC Qg; CoolMOS™ P7 technology; no 100% avalanche test guarantee Higher voltage margin but higher conduction loss; optimized for >100 kHz operation with lower Coss Prefer for designs requiring >500 V derating headroom or targeting >120 kHz switching, accepting trade-off in RDS(on)

Compared with STB20NM50T4, STP20NM50 offers through-hole assembly flexibility and identical electrical specs but higher RthJC; versus IPP60R280P7XKSA1, it provides superior avalanche ruggedness and lower RDS(on) at 500 V, making it more suitable for cost-sensitive, thermally demanding 50–100 kHz industrial supplies.

Availability

STP20NM50 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP20NM50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP20NM50 belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications-including server PSUs, industrial SMPS, and telecom infrastructure-where low RDS(on) × Qg and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP20NM50 supports 12.6 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS2216 Rev 14. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within SOA boundaries when heatsinked appropriately.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 350 ns reverse recovery time and 4.6 µC Qrr, making it unsuitable for synchronous rectification above ~50 kHz. It is designed for freewheeling and clamping, not high-frequency bidirectional conduction; external Schottky or SiC diodes are recommended for SR.

Does STP20NM50 require gate resistors for stability?

Yes-a series gate resistor (typically 4.7–10 Ω) is required to dampen ringing caused by Lg–Ciss resonance and prevent spurious turn-on due to dv/dt coupling. The 1.6 Ω intrinsic gate resistance is insufficient alone; layout parasitics necessitate external damping per Figure 12 and 17 in DS2216.

Can STP20NM50 replace STP16NF50 in existing designs?

Only with validation: STP20NM50 has lower RDS(on) (250 mΩ vs. 320 mΩ), higher Qg (40–56 nC vs. 34 nC), and improved avalanche rating (650 mJ vs. 420 mJ). Gate drive strength and SOA margins must be rechecked; layout changes may be needed to manage increased switching energy.

STP20NM50 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
192W (Tc)
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP20NM50 FAQ

1.How can I place an order for STP20NM50 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP20NM50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP20NM50 reliable?

The price and inventory of STP20NM50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20NM50 is usually 5 days.

3.What payment methods are accepted for STP20NM50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20NM50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP20NM50?

STP20NM50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP20NM50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP20NM50?

For technical support, including STP20NM50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20NM50 requirements.

6.How does Aetrix verify that STP20NM50 is sourced from the original manufacturer or authorized distributors?

All STP20NM50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20NM50 meets industry standards.

7.What is the process for return or replacement of STP20NM50?

All STP20NM50 units undergo pre-shipment inspection (PSI). If there is an issue with STP20NM50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP20NM50 part is unused and in its original packaging.

Return procedure for STP20NM50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STP20NM50 Tags

  • STP20NM50
  • STP20NM50 PDF
  • STP20NM50 Datasheet
  • STP20NM50 Specifications
  • STP20NM50 Images
  • STMicroelectronics
  • STMicroelectronics STP20NM50
  • Buy STP20NM50
  • STP20NM50 Price
  • STP20NM50 Distributor
  • STP20NM50 Supplier
  • STP20NM50 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER