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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP20NM50FP

Name: STP20NM50FP
Brand: STMicroelectronics
SKU: STP20NM50FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP20NM50FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP20NM50FP.pdf

Description:: MOSFET N-CH 550V 20A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:2,833

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Product details

Overview

STP20NM50FP from STMicroelectronics is an N-channel 500 V, 20 A Power MOSFET in TO-220 package, built on MDmesh™ II technology with 200 mΩ typical R_DS(on), 40 nC total gate charge, and 100% avalanche tested. It delivers high efficiency in high-voltage switching converters for industrial power supplies and motor drives.

For engineers reviewing the STP20NM50FP datasheet, STP20NM50FP pinout, STP20NM50FP application, or STP20NM50FP equivalent, key selection criteria include its 500 V V_DS, low 0.65 °C/W R_thJC, 15 V/ns dv/dt capability, and integrated body diode with 350 ns t_rr at 20 A.

Technical Context

This MOSFET employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its low C_iss (1480 pF) and C_rss (34 pF) enable fast, controllable switching under hard-switching conditions up to 500 V.

The device integrates a robust intrinsic body diode rated for 20 A continuous source-drain current and 80 A pulsed, with reverse recovery charge Q_rr of 4.6 µC at 25 °C - critical for ZVS and resonant topologies where diode behavior directly impacts EMI and loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin.
R_DS(on) max	250 mΩ at V_GS = 10 V, I_D = 10 A - determines conduction loss in high-current, medium-frequency applications.
Q_g	40–56 nC - defines gate drive energy requirement and influences switching speed with standard 4.7 Ω gate resistor.
t_r/t_f	16 ns / 12 ns - enables <100 kHz hard-switched operation with minimal overlap loss in bridge configurations.
R_thJC	0.65 °C/W - allows 192 W dissipation at T_C = 25 °C; thermal design must maintain case temperature ≤100 °C for 12.6 A continuous rating.
E_AS	650 mJ - ensures reliable unclamped inductive switching in PFC and flyback snubberless designs without external clamping.

Pinout & Package

STP20NM50FP uses a TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires 10 V drive for full enhancement; sensitive to ESD.
2 (Middle)	Drain (D)	High-voltage power output node; internally bonded to metal tab - electrically active and thermally critical.
3 (Right)	Source (S)	Power return path and gate reference; forms common node with driver ground in low-side configurations.

Key Features

Feature	Design Value
MDmesh™ II silicon architecture	Combines vertical conduction with optimized strip layout to achieve industry-leading R_DS(on) × Q_g figure-of-merit for 500 V class.
100% avalanche tested	Guarantees single-pulse ruggedness to 10 A I_AR and 650 mJ E_AS - eliminates need for external overvoltage clamping in many PFC stages.
Low gate input resistance	1.6 Ω - reduces gate oscillation risk and simplifies RC damping network design in high-dI/dt environments.
Fast body diode recovery	t_rr = 350 ns, Q_rr = 4.6 µC - minimizes commutation loss and voltage overshoot during synchronous rectification or half-bridge freewheeling.

Applications

Industrial Switch-Mode Power Supplies

AC-DC Front-End Converters

Use Scenario: Primary-side switch in 300–500 W universal-input offline flyback or forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with zero-voltage switching assistance.

Use Value: 250 mΩ R_DS(on) and 40 nC Q_g reduce both conduction and gate drive losses, enabling >90% efficiency at full load.

Use Scenario: Boost switch in active PFC stage for 1–2 kW server or telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch handling 500 V DC link and 20 A peak inductor current.

Use Value: 15 V/ns dv/dt rating and 650 mJ E_AS ensure reliable operation during line surges and soft-start transients without snubber circuits.

Motor Drive Inverter Stages

UPS and Battery Backup Systems

Use Scenario: Low-side switch in 3-phase IGBT/MOSFET inverter modules for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Synchronous freewheeling element with controlled body diode recovery during PWM dead-time.

Use Value: 350 ns t_rr and low Q_rr suppress voltage spikes and reduce EMI generation during commutation.

Use Scenario: DC-DC isolation switch in bidirectional battery charger/inverter for 48 V Li-ion systems.

IC Role / Device Role / Timing Role: High-reliability main switch supporting frequent turn-on/off cycles and reverse-current blocking.

Use Value: 12.6 A continuous current at 100 °C case temperature ensures stable operation under sustained thermal stress in enclosed UPS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V V_DS, 280 mΩ R_DS(on), same TO-220 package and 20 A rating	Higher voltage margin for 480 VAC industrial inputs; higher conduction loss at 400 V bus	Select when system requires >500 V breakdown headroom and can tolerate +40% R_DS(on).
IPP60R099C6	600 V, 99 mΩ, Superjunction CoolMOS™ in TO-220FP (isolated tab), 47 nC Q_g	Lower R_DS(on) but higher gate charge; different thermal pad isolation scheme	Prefer for ultra-high-efficiency 65–135 kHz designs where conduction loss dominates and gate drive capability permits.

Compared with STP20NM50FP, STP20NM60FD trades off conduction loss for higher voltage safety margin, while IPP60R099C6 improves efficiency at the cost of increased gate drive demand and different thermal mounting requirements.

Availability

STP20NM50FP is available at Aetrix Electronics and suitable for industrial power supplies, AC-DC front-end converters, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP20NM50FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP20NM50FP belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including PFC, SMPS, and motor control where low R_DS(on) × Q_g is critical.

FAQ

Is STP20NM50FP pin-compatible with STP20NM50?

Yes - STP20NM50FP and STP20NM50 share identical TO-220 package outline, pin assignment (G-D-S), and mechanical footprint. The "FP" suffix denotes ST's ECOPACK®2 lead-free, halogen-free variant with enhanced environmental compliance; electrical specifications are identical per DS2216 Rev 14.

What is the maximum recommended gate resistor for reliable switching?

A 4.7 Ω gate resistor is specified in the datasheet test circuit for resistive and inductive switching characterization. For hard-switched 100 kHz operation, 4.7–10 Ω balances switching speed and gate ringing suppression; values below 2.2 Ω require careful PCB layout to avoid oscillation due to low R_g and 1.6 Ω intrinsic gate resistance.

Does STP20NM50FP require a heatsink in 20 A continuous operation?

Yes - at 20 A continuous and T_C = 25 °C, power dissipation reaches ~100 W (I²R = 20² × 0.25), exceeding the 192 W rating only if junction-to-case thermal path is maintained. With R_thJC = 0.65 °C/W, even modest heatsinking (e.g., 1.5 °C/W sink + interface) is mandatory to hold T_J < 150 °C.

Can STP20NM50FP be used in synchronous rectification?

No - it is not optimized for synchronous rectification. Its body diode has 350 ns t_rr and 1.5 V V_SD, which is too slow and lossy versus dedicated SR MOSFETs. Use only as a controlled switch; for SR, select devices with <100 ns t_rr, <0.5 V V_SD, and logic-level gate drive.

STP20NM50FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP20NM50FP FAQ

1.How can I place an order for STP20NM50FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP20NM50FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP20NM50FP reliable?

The price and inventory of STP20NM50FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20NM50FP is usually 5 days.

3.What payment methods are accepted for STP20NM50FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20NM50FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP20NM50FP?

STP20NM50FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP20NM50FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP20NM50FP?

For technical support, including STP20NM50FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20NM50FP requirements.

6.How does Aetrix verify that STP20NM50FP is sourced from the original manufacturer or authorized distributors?

All STP20NM50FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20NM50FP meets industry standards.

7.What is the process for return or replacement of STP20NM50FP?

All STP20NM50FP units undergo pre-shipment inspection (PSI). If there is an issue with STP20NM50FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP20NM50FP part is unused and in its original packaging.

Return procedure for STP20NM50FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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