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STMicroelectronics STP20NM60
- Part No.:
- STP20NM60
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP20NM60.pdf
- Description:
- MOSFET N-CH 600V 20A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,736
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Product details
Overview
STP20NM60 from STMicroelectronics is an N-channel 600 V, 20 A Power MOSFET using MDmesh™ technology with 250 mΩ typical RDS(on), 15 V/ns dv/dt capability, and 100% avalanche tested. It serves as a high-efficiency main switch in offline SMPS, PFC stages, and industrial motor drives operating up to 100 °C case temperature.
For engineers reviewing the STP20NM60 datasheet, STP20NM60 pinout, STP20NM60 application, or STP20NM60 equivalent, this device is selected for high-voltage switching where low conduction loss, robust unclamped inductive switching, and thermal stability under repetitive avalanche stress are critical design requirements.
Technical Context
This MOSFET employs ST's MDmesh™ multi-drain process combined with PowerMESH™ horizontal layout to achieve ultra-low RDS(on) × area trade-off while maintaining high voltage blocking. Its gate threshold voltage (3–5 V) enables direct drive from standard 10 V logic-level controllers without level-shifting.
The device features low input capacitance (1500 pF), low gate charge (39–54 nC), and fast switching (td(on) = 25 ns, tf = 11 ns) optimized for hard-switched topologies. Its source-drain diode exhibits 390 ns reverse recovery time and 5 μC Qrr at 25 °C, supporting moderate-frequency ZVS-assisted designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC mains-derived DC bus with ≥20% safety margin for surge transients |
| RDS(on) typ. | 250 mΩ - delivers ≤0.5 W conduction loss at 20 A DC, enabling TO-220 package use without forced air |
| ID cont. @ TC=100°C | 12.6 A - defines maximum continuous current in thermally constrained PCB-mount applications |
| EAS | 650 mJ - enables reliable operation in unclamped inductive switching (e.g., relay driving, solenoid control) |
| dv/dt rating | 15 V/ns - prevents spurious turn-on during fast-rising drain transients in high-noise EMI environments |
| Qg | 39–54 nC - determines gate driver power requirement and switching loss contribution in 50–100 kHz SMPS |
| RthJC | 0.65 °C/W - allows junction-to-case thermal path modeling for heatsink sizing in TO-220 configuration |
Pinout & Package
STP20NM60 uses TO-220 package with isolated tab (non-conductive mounting). The plastic body provides creepage/clearance compliant with IEC 60950-1 for 600 V systems. Mounting requires insulating washer or thermal pad when heatsink is grounded.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance MOSFET control terminal; requires <100 nA leakage current handling and <1.6 Ω gate resistance for stable switching |
| 2 (Middle) | Drain (D) | Main high-voltage power terminal; electrically connected to metal tab - must be isolated from heatsink unless system ground referenced |
| 3 (Right) | Source (S) | Power return path and reference for gate drive; forms common node with driver IC ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ superjunction architecture | Reduces RDS(on) by 40% vs. planar 600 V MOSFETs of same die size, enabling smaller footprint in high-power density designs |
| 100% avalanche tested | Guarantees single-pulse energy handling up to 650 mJ without parameter shift - eliminates need for external snubbers in flyback/LLC primary switches |
| Low Ciss/Coss ratio | 1500 pF / 350 pF enables tighter control of Miller plateau timing and reduces risk of shoot-through in half-bridge layouts |
| Enhanced diode softness (Qrr = 5 μC) | Lowers EMI generation during diode commutation in bridge-leg freewheeling, reducing filter component count in motor inverters |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 750 W BLDC motor control in HVAC compressors. IC Role / Device Role / Timing Role: Low-side switching element handling 20 A peak phase current at 20 kHz PWM frequency. Use Value: 250 mΩ RDS(on) limits conduction loss to 100 W per device at full load, enabling natural convection cooling on aluminum chassis. |
Use Scenario: Active clamp forward converter primary switch in 1.5 kW telecom rectifier. IC Role / Device Role / Timing Role: Main power switch clamped by auxiliary MOSFET to limit VDS overshoot during turn-off. Use Value: 15 V/ns dv/dt rating ensures immunity to voltage spikes exceeding 400 V/ns during clamp transition, preventing false triggering. |
| AC-DC Adapter PFC Stage | Solenoid Driver Module |
|
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC for 300 W laptop adapter. IC Role / Device Role / Timing Role: High-side switch operating at 65 kHz with 10 A average inductor current. Use Value: 39 nC total gate charge minimizes driver losses and allows use of low-cost bipolar gate drivers instead of dedicated MOSFET drivers. |
Use Scenario: Unclamped inductive load switch for 24 V DC solenoid valve in factory automation PLC output module. IC Role / Device Role / Timing Role: Single-ended switch absorbing stored inductor energy via intrinsic avalanche capability. Use Value: 650 mJ single-pulse avalanche energy rating eliminates need for external TVS or RCD snubber, reducing BOM cost by $0.32/unit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NM60 | Same silicon but TO-247 package; RthJC = 2.8 °C/W vs. 0.65 °C/W for STP20NM60 | Supports higher continuous current (20 A @ TC = 25 °C) due to superior thermal dissipation | Select when >15 A continuous current or >100 W power dissipation requires bolt-down heatsinking |
| IPP60R099C7 | Infineon CoolMOS™ C7; 99 mΩ RDS(on) at 650 V but higher Qg (63 nC) and lower avalanche rating (EAS = 320 mJ) | Better efficiency at light loads due to lower RDS(on), but unsuitable for unclamped inductive switching | Select only if system uses active clamping or synchronous rectification and operates below 50 kHz |
Compared with STW20NM60 and IPP60R099C7, STP20NM60 offers optimal balance of thermal performance in low-cost TO-220 packaging, rugged avalanche behavior for industrial reliability, and gate drive simplicity - making it preferred for cost-sensitive, medium-power SMPS where board space and heatsink mass are constrained.
Availability
STP20NM60 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and AC-DC adapters requiring stable component supply across multi-year production cycles.
Supply support for STP20NM60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–800 V DC-link applications including PFC, SMPS, and motor control inverters.
FAQ
What is the maximum safe operating temperature for STP20NM60 in TO-220 package?
The junction temperature must not exceed 150 °C. With RthJC = 0.65 °C/W and maximum PTOT = 192 W at TC = 25 °C, derating begins at TC > 25 °C. At TC = 100 °C, continuous current drops to 12.6 A to maintain TJ ≤ 150 °C under worst-case thermal interface conditions.
Does STP20NM60 require a gate resistor for EMI suppression?
Yes - a 4.7 Ω gate resistor is recommended per Figure 14 test circuit to limit di/dt during turn-on and reduce high-frequency ringing. This value balances switching speed (td(on) = 25 ns) and EMI emissions, especially when driving inductive loads with fast dv/dt edges.
Can STP20NM60 replace STP16NF60 in existing designs?
No - STP16NF60 has 16 A rating and 350 mΩ RDS(on). STP20NM60 offers 25% higher current and 29% lower on-resistance, but its gate threshold (3–5 V) is identical. Layout changes may be needed due to higher peak current (80 A pulsed) and increased avalanche energy handling.
Is the TO-220 tab electrically connected to the drain?
Yes - Pin 2 (center lead) and the metal tab are internally connected to the drain. When mounted to a heatsink, electrical isolation (e.g., mica washer + thermal paste or insulated mounting kit) is mandatory unless the heatsink is floating or drain-referenced in the system topology.
STP20NM60 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 290mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 192W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP20NM60 FAQ
1.How can I place an order for STP20NM60 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP20NM60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP20NM60 reliable?
The price and inventory of STP20NM60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP20NM60 is usually 5 days.
3.What payment methods are accepted for STP20NM60?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP20NM60 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP20NM60?
STP20NM60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP20NM60 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP20NM60?
For technical support, including STP20NM60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP20NM60 requirements.
6.How does Aetrix verify that STP20NM60 is sourced from the original manufacturer or authorized distributors?
All STP20NM60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP20NM60 meets industry standards.
7.What is the process for return or replacement of STP20NM60?
All STP20NM60 units undergo pre-shipment inspection (PSI). If there is an issue with STP20NM60, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP20NM60 part is unused and in its original packaging.
Return procedure for STP20NM60:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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