STMicroelectronics STP210N75F6

Overview

STP210N75F6 from STMicroelectronics is a 75 V, 120 A N-channel Power MOSFET in TO-220 package, featuring 3.0–3.7 mΩ R_DS(on) at V_GS = 10 V, 171 nC total gate charge, and 300 W power dissipation at T_C = 25 °C. It delivers high-current switching for DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the STP210N75F6 datasheet, STP210N75F6 pinout, STP210N75F6 application, or STP210N75F6 equivalent, key selection criteria include its low on-resistance, high avalanche ruggedness, TO-220 thermal performance (R_thj-case = 0.5 °C/W), and verified 480 A pulsed drain current capability.

Technical Context

This STripFET™ VI DeepGATE™ MOSFET uses an optimized gate structure to minimize gate charge and output capacitance while maximizing conduction efficiency. Its 11800 pF C_iss, 394 pF C_rss, and 34 ns t_r/154 ns t_d(off) support fast, low-loss hard-switching up to 100 kHz in high-power topologies.

The device integrates a robust body diode with 120 A continuous/480 A pulsed source-drain current and 60–144 ns reverse recovery time at 150 °C junction temperature, enabling reliable synchronous rectification and unclamped inductive load handling without external freewheeling diodes.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Thermal pad electrically tied to drain for direct heatsink coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IRFP260N and IXTH120N25T, STP210N75F6 provides optimal balance of 75 V rating, ultra-low 3.7 mΩ on-resistance, and TO-220 thermal efficiency-making it the preferred choice for space-constrained, high-current 48 V industrial power stages where conduction loss and gate drive simplicity are critical.

Availability

STP210N75F6 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, UPS output stages, and solar charge controllers requiring stable component supply and long-term manufacturability.

Supply support for STP210N75F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ VI series targets high-efficiency power conversion, emphasizing low R_DS(on), fast switching, and ruggedness in industrial motor control, renewable energy, and uninterruptible power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP210N75F6 maintains 120 A continuous drain current rating even at T_C = 100 °C, as confirmed in Table 2 of the official datasheet (Doc ID 018507 Rev 1). This reflects its robust thermal design and low R_DS(on) temperature coefficient, enabling full-rated current operation without derating in well-heatsinked industrial environments.

Does this MOSFET require a gate resistor for safe switching?

Yes - a gate resistor (typically 4.7 Ω, per Figure 13 test circuit) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The 171 nC gate charge and 394 pF Crss make it susceptible to Miller-induced shoot-through without proper gate drive impedance matching and layout optimization.

Is the TO-220 package lead-free and RoHS compliant?

Yes - the STP210N75F6 is offered in ECOPACK®-compliant TO-220 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full environmental compliance data, including Pb-free plating and halogen-free molding compound, is documented in ST's ECOPACK® database at www.st.com.

Can this device replace older STPxxNxxF3 or STPxxNxxF5 MOSFETs?

Yes - STP210N75F6 is a direct upgrade from STP200N75F3/F5, offering 25% lower R_DS(on) (3.7 mΩ vs 4.9 mΩ), 18% lower Q_g, and improved avalanche ruggedness. Pin-compatible in TO-220, it enables immediate efficiency gains in existing designs without layout changes.