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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP21N65M5

Name: STP21N65M5
Brand: STMicroelectronics
SKU: STP21N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP21N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP21N65M5.pdf

Description:: MOSFET N-CH 650V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,110

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Product details

Overview

STP21N65M5 from STMicroelectronics is an N-channel 650 V, 17 A Power MOSFET based on MDmesh M5 vertical process technology, featuring 150 mΩ typ. R_DS(on) at V_GS = 10 V, 100% avalanche tested, and optimized for high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STP21N65M5 datasheet, STP21N65M5 pinout, STP21N65M5 application, or STP21N65M5 equivalent, this device delivers verified dv/dt capability (15 V/ns), low gate charge (50 nC), and robust source-drain diode recovery (Q_rr = 4–5 µC) critical for hard-switched converters.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture to achieve ultra-low R_DS(on) while maintaining high V_DSS rating and fast switching performance. Its design integrates a low-charge, low-C_oss structure with enhanced avalanche ruggedness.

The device supports high-voltage, high-current operation up to T_J = 150 °C, with thermal resistance R_thJC = 1 °C/W (TO-220 package), and features a well-characterized body diode (V_SD = 1.5 V at I_SD = 17 A, t_rr = 294–340 ns) suitable for synchronous rectification and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands full mains-referenced DC bus voltages in 400 V AC input systems without derating.
R_DS(on) max	179 mΩ - Enables <1.5 W conduction loss at 11 A continuous drain current in TO-220 package.
I_D (T_C = 25 °C)	17 A - Supports high-power output stages in industrial and telecom power supplies.
Q_g	50 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers.
E_AS	400 mJ - Guarantees reliable unclamped inductive switching in flyback and LLC circuits.
t_r, t_f	10 ns / 12 ns - Minimizes switching transition losses in >100 kHz hard-switched applications.
V_GS(th)	3–5 V - Ensures clean turn-on with standard 5 V or 10 V logic-level gate drive.

Pinout & Package

STP21N65M5 uses the TO-220 package (type A), with three leads: Gate (pin 1), Drain (pin 2, tab-connected), Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤±25 V gate-source voltage; low input capacitance (C_iss = 1950 pF) eases driver selection.
Pin 2 (D / TAB)	Drain	Main high-side power terminal; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; connects to power ground or low-side switch node.

Key Features

Feature	Design Value
MDmesh M5 silicon technology	Delivers 150 mΩ typ. R_DS(on) at 650 V - 25% lower than prior-generation 650 V MOSFETs in same package.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 400 mJ - eliminates need for external snubbers in inductive load switching.
High dv/dt immunity	Rated 15 V/ns - suppresses false turn-on during fast voltage transients in bridge configurations.
Low Q_gd/Q_g ratio	23/50 nC = 0.46 - improves Miller immunity and enables stable operation with minimal gate resistor.
Optimized body diode	t_rr = 294 ns (T_J = 25 °C), soft recovery - reduces EMI and voltage overshoot in freewheeling paths.

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switch in 500–1000 W open-frame server power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 400 V DC bus and delivering 17 A peak current per phase.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >95% efficiency at full load without forced air cooling.

Use Scenario: Active clamp forward or LLC resonant converter in redundant 2 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch with precise timing control of ZVS transitions.

Use Value: Tight t_rr and Q_rr tolerance (4–5 µC) ensures predictable dead-time margin and minimizes circulating current loss.

PFC Boost Stage

Motor Drive Inverter

Use Scenario: Switching element in continuous conduction mode (CCM) boost PFC stage for 3 kW industrial motor drives.

IC Role / Device Role / Timing Role: Fast-turning, high-voltage switch controlling input current waveform alignment with AC line voltage.

Use Value: High dv/dt rating prevents spurious turn-on during zero-crossing commutation, improving THD and reliability.

Use Scenario: Half-bridge leg in 7.5 kW HVAC inverter driving permanent magnet motors.

IC Role / Device Role / Timing Role: Low-loss, avalanche-rugged switch managing 650 V DC link and 17 A motor phase current.

Use Value: 100% avalanche testing ensures survival during short-circuit events and regenerative braking overvoltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW21N65M5	Discontinued (removed from ordering info Rev 5); identical electrical specs but offered in TO-247 package with lower R_thJC (0.5 °C/W).	Preferred for higher-power designs (>1.5 kW) requiring superior thermal performance and no tab isolation constraints.	Select only if TO-247 mechanical fit and enhanced heatsinking are required; not drop-in compatible with TO-220 footprint.
IPW65R090CFD7	Infineon CoolMOS CFD7: 90 mΩ R_DS(on), 650 V, Q_g = 45 nC, but higher V_GS(th) (3.5–5.5 V) and no 100% avalanche test guarantee.	Better suited for ultra-high-frequency ZVS/ZCS topologies where lower R_DS(on) outweighs ruggedness needs.	Choose when optimizing for peak efficiency above 300 kHz; verify avalanche margin via system-level testing.

Compared with STP21N65M5, STW21N65M5 offers better thermal dissipation in TO-247 but lacks current availability, while IPW65R090CFD7 trades guaranteed avalanche robustness for lower on-resistance - making STP21N65M5 the optimal balance of ruggedness, cost, and TO-220 compatibility for mainstream industrial SMPS.

Availability

STP21N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and PFC boost stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP21N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP21N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V offline power conversion systems.

FAQ

Is STP21N65M5 suitable for use in hard-switched flyback converters?

Yes. With its 650 V V_DSS, 400 mJ E_AS, and 15 V/ns dv/dt rating, STP21N65M5 withstands reflected output voltage spikes and leakage inductance energy in flyback topologies up to 150 W. Its low Q_g and fast switching times minimize losses at 65–130 kHz operation.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 10.7 A at T_C = 100 °C. This value accounts for thermal derating due to junction-to-case resistance (R_thJC = 1 °C/W) and ensures safe operation within the SOA limits shown in Figure 3, provided adequate heatsinking is applied.

Does STP21N65M5 require a negative gate voltage for reliable turn-off?

No. STP21N65M5 has a V_GS(th) range of 3–5 V and is fully specified for 0 V turn-off. While applying –5 V enhances noise immunity in noisy environments, it is not required for functional operation - standard 0 V to 10 V gate drive suffices for all rated conditions.

Can STP21N65M5 replace older STP20NM60FD in existing designs?

Yes, with qualification. STP21N65M5 offers lower R_DS(on) (179 mΩ vs. 220 mΩ), improved dv/dt immunity (15 V/ns vs. 10 V/ns), and tighter Q_rr distribution. However, gate charge differs (50 nC vs. 42 nC), so gate driver strength and layout parasitics must be revalidated for optimal switching behavior.

STP21N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP21N65M5 FAQ

1.How can I place an order for STP21N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP21N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP21N65M5 reliable?

The price and inventory of STP21N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP21N65M5 is usually 5 days.

3.What payment methods are accepted for STP21N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP21N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP21N65M5?

STP21N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP21N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP21N65M5?

For technical support, including STP21N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP21N65M5 requirements.

6.How does Aetrix verify that STP21N65M5 is sourced from the original manufacturer or authorized distributors?

All STP21N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP21N65M5 meets industry standards.

7.What is the process for return or replacement of STP21N65M5?

All STP21N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP21N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP21N65M5 part is unused and in its original packaging.

Return procedure for STP21N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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