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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP21NM60N

Name: STP21NM60N
Brand: STMicroelectronics
SKU: STP21NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP21NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP21NM60N.pdf

Description:: MOSFET N-CH 600V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,638

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Product details

Overview

STP21NM60N from STMicroelectronics is an N-channel 600 V, 17 A, 0.17 Ω R_DS(on) Power MOSFET in TO-220 package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It delivers low gate charge (66 nC), low input capacitance (1900 pF), and 100% avalanche tested ruggedness - deployed in industrial SMPS, PFC stages, and offline DC-DC converters.

For engineers reviewing the STP21NM60N datasheet, STP21NM60N pinout, STP21NM60N application, or STP21NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.17 Ω R_DS(on) at V_GS = 10 V, 66 nC total gate charge, 150 °C max junction temperature, and TO-220 thermal resistance of 0.89 °C/W (junction-to-case).

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V breakdown voltage and 8.5 A repetitive avalanche current support robust operation under inductive switching stress.

The MOSFET features a fast body diode with 372 ns reverse recovery time (T_j = 25 °C) and 4.6 µC reverse recovery charge, enabling efficient hard-switched topologies without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 80% of rated voltage during dv/dt-limited turn-off (48 V/ns) in 480 V bus applications
R_DS(on) max	0.22 Ω - Confirmed at V_GS = 10 V, I_D = 8.5 A; ensures <1.6 W conduction loss at 17 A continuous drain current
Q_g	66 nC - Enables efficient gate drive with standard 1–2 A peak drivers; reduces switching loss in 50–100 kHz converters
I_D (continuous)	17 A at T_C = 25 °C - Limited by thermal capability; derates to 10 A at T_C = 100 °C per safe operating area
E_AS	610 mJ - Single-pulse avalanche energy rating confirms ruggedness in unclamped inductive load conditions
R_thj-case	0.89 °C/W - Junction-to-case thermal resistance enables 140 W dissipation at 25 °C case temperature

Pinout & Package

STP21NM60N is housed in a through-hole TO-220 package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Source	Reference node for gate drive; connects to power ground or low-side return path
Pin 2 (center)	Gate	High-impedance control input requiring ≤20 mV AC test signal per R_g spec; driven by logic-level or dedicated gate driver
Pin 3 (right) / Metal Tab	Drain	Main high-voltage power terminal; tab must be electrically isolated unless used as heatsink connection with floating drain potential

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 8.5 A repetitive avalanche current and 610 mJ single-pulse energy without parameter shift
Low gate charge (66 nC)	Reduces driver power consumption and switching transition time in 50–100 kHz SMPS designs
Low input capacitance (1900 pF)	Minimizes Miller effect-induced shoot-through risk and improves EMI behavior in high dv/dt environments
MDmesh™ second-generation structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (≈11.2 Ω·nC) for high-frequency efficiency
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect meets JEDEC JESD97; supports automated reflow and wave soldering

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: Primary-side switching in 300–500 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller (e.g., UC384x) at 65–100 kHz.

Use Value: 0.17 Ω R_DS(on) and 66 nC Q_g reduce conduction + switching losses below 1.8 W at full load, improving efficiency to >88%.

Use Scenario: Boost switch in universal-input (90–264 VAC) active PFC circuits delivering 350–500 W.

IC Role / Device Role / Timing Role: Fast-switching boost transistor synchronized to line frequency and current-sense feedback loop.

Use Value: 372 ns t_rr and low Q_rr (4.6 µC) suppress diode-related losses and EMI, enabling stable zero-crossing detection.

Server & Telecom DC-DC Converters

Motor Drive Half-Bridge Stages

Use Scenario: Primary switch in isolated 48 V input → 12 V/24 V intermediate bus converters.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge or LLC resonant topologies.

Use Value: 600 V rating and 150 °C T_jmax allow reliable operation under 400 V DC bus transients and high ambient temperatures.

Use Scenario: Low-side switch in 3-phase inverter half-bridges for 1–3 kW BLDC motor drives.

IC Role / Device Role / Timing Role: Synchronous rectifier or freewheeling path switch commutated at ≤20 kHz.

Use Value: Avalanche-rated ruggedness (E_AS = 610 mJ) tolerates inductive kickback during fault conditions without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C6	650 V, 0.19 Ω, 65 nC - Infineon CoolMOS™ C6; slightly higher R_DS(on) but lower C_oss (120 pF vs 110 pF)	Better light-load efficiency in ZVS topologies due to lower output capacitance	Prefer when designing resonant converters where C_oss dominates switching loss
STW21NM60N	Same die, TO-247 package - identical electrical specs but 0.35 °C/W R_thj-case vs 0.89 °C/W	Higher power handling (30 W vs 140 W at T_C = 25 °C) and improved thermal margin in forced-air cooling	Choose when board space allows larger package and thermal design requires >100 W dissipation

Compared with IPP60R190C6 and STW21NM60N, STP21NM60N offers optimal cost–performance balance for TO-220-based 100–500 W converters, trading off some thermal headroom and ultra-low C_oss for compact footprint and proven field reliability in industrial SMPS.

Availability

STP21NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and telecom DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for STP21NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with over 40 years of industrial-grade device expertise.

STP21NM60N belongs to the MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and telecom power conversion systems where low R_DS(on) and low gate charge are critical.

FAQ

Is STP21NM60N suitable for 230 VAC input PFC applications?

Yes. With 600 V V_DSS, 17 A continuous current, and 610 mJ avalanche energy, it supports universal-input (90–264 VAC) active PFC boost stages up to 500 W. Its 372 ns reverse recovery time and low Q_rr ensure stable operation under high di/dt conditions typical in PFC inductors.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±25 V, but ST specifies V_GS = 10 V for R_DS(on) characterization. For reliable operation, use 12–15 V gate drive with series resistance (4.7 Ω typical) to limit peak current and prevent oscillation; avoid exceeding 20 V to prevent oxide stress.

Does STP21NM60N require a heatsink in 17 A continuous operation?

Yes. At 17 A and 0.17 Ω R_DS(on), conduction loss is ~49 W. With R_thj-case = 0.89 °C/W, junction temperature would exceed 150 °C even with ideal case cooling. A heatsink with ≤1.5 °C/W thermal resistance (including interface) is required to maintain T_j ≤ 135 °C at 25 °C ambient.

Can STP21NM60N replace STP20NM60 in existing designs?

Yes, with validation. Both are 600 V N-channel TO-220 MOSFETs, but STP21NM60N has lower R_DS(on) (0.17 Ω vs 0.22 Ω), lower Q_g (66 nC vs 72 nC), and improved avalanche rating (610 mJ vs 520 mJ). Layout and gate drive remain compatible, though reduced switching loss may require minor dead-time adjustment.

STP21NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP21NM60N FAQ

1.How can I place an order for STP21NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP21NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP21NM60N reliable?

The price and inventory of STP21NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP21NM60N is usually 5 days.

3.What payment methods are accepted for STP21NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP21NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP21NM60N?

STP21NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP21NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP21NM60N?

For technical support, including STP21NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP21NM60N requirements.

6.How does Aetrix verify that STP21NM60N is sourced from the original manufacturer or authorized distributors?

All STP21NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP21NM60N meets industry standards.

7.What is the process for return or replacement of STP21NM60N?

All STP21NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP21NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP21NM60N part is unused and in its original packaging.

Return procedure for STP21NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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