STMicroelectronics STP22N60DM6

Overview

STP22N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 240 mΩ R_DS(on) max at 10 V V_GS, and 15 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with 88 ns t_rr and 0.299 µC Q_rr, optimized for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STP22N60DM6 datasheet, STP22N60DM6 pinout, STP22N60DM6 application, or STP22N60DM6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 20.6 nC total gate charge, 1.6 V forward diode voltage at 15 A, and TO-220 package thermal resistance of 0.96 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology to simultaneously reduce R_DS(on) per die area and reverse recovery charge (Q_rr) while maintaining high dv/dt immunity. Its intrinsic gate resistance is 5.8 Ω, and C_iss/C_oss/C_rss are 800 pF/75 pF/4.7 pF at V_DS = 100 V, enabling precise switching control in hard- and soft-switching topologies.

The device is 100% avalanche tested to 3.5 A repetitive I_AR and 320 mJ E_AS, with Zener-protected gate oxide and guaranteed operation up to 150 °C junction temperature. Its safe operating area supports 10 ms pulses at 15 A and 300 V, limited by R_DS(on) conduction loss.

Key Specifications

Pinout & Package

Supplied in TO-220 type A package with isolated tab (D), gate (G), and source (S) terminals. The metal tab is electrically connected to the drain and must be insulated from heatsink unless drain-referenced mounting is intended.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPP60R190C7 and IXFH30N60X3, STP22N60DM6 offers the best balance of low Q_rr, moderate Q_g, and proven dv/dt ruggedness-making it optimal for phase-shifted full-bridge and resonant converters where diode recovery behavior critically impacts efficiency and EMI.

Availability

STP22N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, server power supplies, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STP22N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh DM6 product line targets high-efficiency, high-frequency power conversion systems-specifically engineered to reduce switching and conduction losses in resonant, phase-shifted, and soft-switching topologies above 50 kHz.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP22N60DM6 supports 9.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12920 Rev 2. This derating reflects thermal limitations of the TO-220 package and must be applied when heatsink temperature exceeds 25 °C ambient. Designers should verify junction temperature using R_thj-case = 0.96 °C/W and actual power dissipation.

Is the body diode suitable for synchronous rectification in a 100 kHz LLC converter?

Yes-the body diode exhibits 88 ns reverse recovery time and 0.299 µC Q_rr at 25 °C, making it viable for synchronous rectification up to ~150 kHz in well-controlled layouts. However, its 1.6 V forward voltage at 15 A is higher than discrete Schottky diodes, so efficiency gain depends on duty cycle and thermal management.

Does STP22N60DM6 require a negative gate turn-off voltage to ensure robustness?

No-STP22N60DM6 is fully compatible with 0 V to +10 V or +12 V gate drive. Its ±25 V V_GS rating and integrated Zener protection eliminate the need for negative turn-off bias. A gate resistor of 4.7 Ω achieves balanced switching speed and EMI performance per Figure 18 in the datasheet.

How does the 100 V/ns dv/dt rating impact PCB layout requirements?

The 100 V/ns rating allows relaxed gate loop inductance design-layout can tolerate up to ~15 nH stray inductance without risk of false turn-on during V_DS transients. Still, minimizing source inductance remains critical; a Kelvin source connection and tight gate-source loop are recommended for >50 kHz operation.