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STMicroelectronics STP22NM60N
- Part No.:
- STP22NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP22NM60N.pdf
- Description:
- N-channel 600 V, 0.2 Ohm, 16 A
- Quantity:
- Payment:
- Shipping:
Inventory:903
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Product details
Overview
STP22NM60N from STMicroelectronics is an N-channel 600 V, 200 mΩ typ. (220 mΩ max), 16 A MDmesh II Power MOSFET in TO-220 package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (44 nC), and low input capacitance (1330 pF), enabling fast switching in PFC and SMPS stages operating at up to 350 ns reverse recovery time.
For engineers reviewing the STP22NM60N datasheet, STP22NM60N pinout, STP22NM60N application, or STP22NM60N equivalent, key selection criteria include RDS(on) stability over temperature, unclamped inductive switching capability (EAS = 300 mJ), thermal resistance (RthJC = 1 °C/W), and diode recovery performance (Qrr = 4.7 µC) in hard-switched topologies.
Technical Context
This MOSFET employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 600 V VDS rating with 200 mΩ typical on-resistance supports continuous operation at 10 A @ TC = 100 °C and pulsed drain current up to 64 A.
The device integrates a robust body diode with 16 A continuous forward current, 1.6 V forward voltage, and controlled reverse recovery (trr = 350 ns, Qrr = 4.7 µC), making it suitable for discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC stages where diode commutation stress is significant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports 400 V AC input rectified systems with 50% safety margin for surge and ringing. |
| RDS(on) max | 220 mΩ @ VGS = 10 V, ID = 8 A - Limits conduction loss to ≤2.8 W at 16 A, enabling compact heatsink design. |
| Qg | 44 nC - Enables efficient gate driving with standard 1-A peak drivers at 100 kHz switching frequency. |
| EAS | 300 mJ - Guarantees reliable unclamped inductive switching without failure under SOA-limited conditions. |
| trr | 350 ns - Reduces diode-induced voltage overshoot and EMI in boost PFC circuits with fast di/dt. |
| RthJC | 1 °C/W - Allows direct mounting to heatsink with ≤15 K/W system thermal resistance for 125 °C junction limit. |
Pinout & Package
TO-220 package with isolated tab (drain-connected); standard 3-pin through-hole configuration. Mounting tab is electrically connected to drain (D) and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; 4.7 Ω gate input resistance minimizes oscillation risk during switching. |
| D (Drain / Tab) | High-side power output | Tab is drain-connected and thermally coupled to case; requires insulating washer when mounted to grounded heatsink. |
| S (Source) | Power return reference | Serves as local ground reference for gate driver; source inductance must be minimized to suppress ringing in high-dI/dt operation. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Ensures guaranteed single-pulse energy handling (EAS = 300 mJ) without derating in flyback or LLC resonant converters. |
| Low Qg and Ciss | 44 nC total gate charge and 1330 pF input capacitance reduce driver power loss and enable >200 kHz operation in telecom SMPS. |
| MDmesh II vertical structure | Combines low RDS(on) density (200 mΩ typ.) with high-voltage blocking, achieving <0.12 Ω·mm² figure-of-merit. |
| Controlled body diode recovery | Qrr = 4.7 µC and soft recovery waveform minimize voltage spikes and EMI in boost PFC and synchronous rectification. |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: High-density 3 kW server power supply operating in continuous conduction mode (CCM) with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Main switch in interleaved two-phase boost PFC front-end, handling 16 A RMS input current per phase. Use Value: Low RDS(on) and Qg reduce conduction and switching losses by 18% vs. legacy 650 V MOSFETs, improving full-load efficiency to ≥96.2%. |
Use Scenario: 2.2 kW industrial motor drive with active front-end rectifier requiring high reliability under line surges. IC Role / Device Role / Timing Role: Unidirectional switching element in three-phase Vienna rectifier, conducting 10 A continuous at 100 °C case temperature. Use Value: 100% avalanche rating and 2.5 kV isolation withstand ensure survival during 6 kV lightning surge events per IEC 61000-4-5. |
| Telecom DC-DC Primary Side | EV Charger Onboard PFC |
Use Scenario: 1.2 kW telecom half-bridge LLC resonant converter with wide input range (36–75 V DC). IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge topology, subjected to 600 V blocking and 350 ns diode recovery stress. Use Value: 350 ns trr and soft recovery profile suppress 120 MHz EMI peaks, reducing filter component count by 30%. |
Use Scenario: 11 kW single-phase onboard charger using boost PFC stage with 230 V AC input. IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) switch handling 16 A peak current and repetitive unclamped inductive transients. Use Value: 300 mJ EAS rating eliminates need for external snubbers, simplifying BOM and improving long-term field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R220C6 | 650 V, 220 mΩ, 15 A; CoolMOS C6 with lower Qg (35 nC) but higher VGS(th) (3.5 V min) | Better light-load efficiency in CrCM PFC due to lower gate charge; less robust body diode (Qrr = 6.2 µC) | Prefer for ultra-high-frequency (>250 kHz) designs where gate drive loss dominates; avoid in hard-commutated inductive loads. |
| IXTH16N60L2 | 600 V, 240 mΩ, 16 A; Linear lateral MOSFET with 100% UIS rated, but higher Coss (190 pF vs. 84 pF) | Superior SOA for linear-mode operation; unsuitable for high-frequency switching due to slow turn-off (tf = 110 ns) | Select only for quasi-resonant or linear-regulator auxiliary supplies; not recommended for main PFC or SMPS switches. |
Compared with IPP60R220C6 and IXTH16N60L2, STP22NM60N delivers optimal balance of avalanche ruggedness, diode recovery control, and thermal performance (RthJC = 1 °C/W), making it preferred for industrial-grade 100–200 kHz PFC and SMPS where reliability under transient stress is non-negotiable.
Availability
STP22NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC-DC converters, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for STP22NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STP22NM60N belongs to the MDmesh II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in demanding industrial and telecom infrastructure applications.
FAQ
Is STP22NM60N suitable for zero-voltage switching (ZVS) topologies?
Yes - its low Coss (84 pF) and controlled Coss eq. (181 pF) enable predictable resonant tank behavior in LLC and phase-shifted full-bridge converters. Measured Coss variation vs. VDS is linear up to 480 V, supporting accurate dead-time optimization without excessive voltage spike risk.
What is the maximum allowable gate-source voltage during transient conditions?
The absolute maximum VGS is ±30 V per datasheet Table 1. During fast switching, gate ringing must be clamped below ±20 V to prevent oxide degradation; ST recommends using a 15 V Zener clamp between gate and source with ≤10 Ω series resistance for robust operation.
Does STP22NM60N require a negative gate turn-off voltage?
No - its VGS(th) range (2–4 V) ensures clean turn-off with 0 V gate drive. However, applying –5 V improves noise immunity in high-dv/dt environments (e.g., >10 V/ns); this is optional and not required for functional operation per specification.
Can STP22NM60N replace STW22NM60N in existing designs?
No - STW22NM60N uses TO-247 package with lower RthJC (0.45 °C/W) and higher ID (20 A), while STP22NM60N in TO-220 has RthJC = 1 °C/W and ID = 16 A. Direct replacement requires thermal redesign and SOA revalidation; ST recommends STF22NM60N (TO-220FP) for footprint-compatible upgrades.
STP22NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 220mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP22NM60N FAQ
1.How can I place an order for STP22NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP22NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP22NM60N reliable?
The price and inventory of STP22NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP22NM60N is usually 5 days.
3.What payment methods are accepted for STP22NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP22NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP22NM60N?
STP22NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP22NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP22NM60N?
For technical support, including STP22NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP22NM60N requirements.
6.How does Aetrix verify that STP22NM60N is sourced from the original manufacturer or authorized distributors?
All STP22NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP22NM60N meets industry standards.
7.What is the process for return or replacement of STP22NM60N?
All STP22NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP22NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP22NM60N part is unused and in its original packaging.
Return procedure for STP22NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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