STMicroelectronics STP23N80K5

Overview

STP23N80K5 from STMicroelectronics is an 800 V, 16 A N-channel Power MOSFET in TO-220 package, fabricated with MDmesh K5 vertical structure technology. It delivers 230 mΩ typical R_DS(on), 33 nC total gate charge, and 400 mJ single-pulse avalanche energy, enabling high-efficiency switching in high-voltage AC-DC converters and industrial motor drives.

For engineers reviewing the STP23N80K5 datasheet, STP23N80K5 pinout, STP23N80K5 application, or STP23N80K5 equivalent, key selection criteria include its 800 V V_DS, ultra-low Q_g, Zener-protected gate, 100% avalanche tested ruggedness, and TO-220 thermal performance (R_thJC = 0.66 °C/W).

Technical Context

This device implements a proprietary MDmesh K5 vertical superjunction architecture that reduces specific on-resistance and gate charge simultaneously. Its optimized cell pitch and deep-trench doping profile yield 280 mΩ max R_DS(on) at V_GS = 10 V and ID = 8 A, while maintaining 800 V breakdown voltage and 50 V/ns MOSFET dv/dt ruggedness.

The integrated body diode supports fast recovery (t_rr = 410 ns at T_J = 25 °C) with low Q_rr (7 µC), and the Zener-protected gate withstands ±30 V V_GS. Safe operating area is validated up to 100 µs pulses at 150 °C junction temperature.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (drain-connected), 3-pin configuration, 1.3 mm lead thickness, and 15.5 mm body width per ECOPACK-compliant mechanical drawing DS11318 Rev 2 Figure 18.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N80K5, STP23N80K5 offers TO-220 compatibility and lower cost for ≤16 A designs; versus IPP60R190C7, it provides essential 800 V rating for universal-input or 1500 V PV systems, despite slightly higher R_DS(on).

Availability

STP23N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, photovoltaic inverters, and high-voltage DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STP23N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-voltage power conversion-specifically engineered for 800–1000 V applications where low R_DS(on) × Q_g FoM directly improves system power density and thermal performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP23N80K5 supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11318 Rev 2. This rating reflects real-world thermal limits under heatsink-mounted conditions and must be used-not the 16 A value at 25 °C-for thermal design validation.

Does this MOSFET include integrated gate protection?

Yes, the STP23N80K5 integrates a Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external gate protection components in most applications, as confirmed in the "Features" section and absolute maximum ratings table (V_GS = ±30 V).

Can STP23N80K5 replace older STP22N80 or STP20N90 in existing designs?

No direct drop-in replacement: STP22N80 has 800 V/22 A/320 mΩ rating and different gate charge profile; STP20N90 is 900 V/20 A/380 mΩ with higher R_DS(on). While pin-compatible, layout changes may be needed due to differences in Q_g (33 nC vs. 42 nC/58 nC) and SOA curves-design validation is required.

Is the body diode suitable for synchronous rectification?

No-the body diode is optimized for freewheeling, not synchronous rectification. Its 410 ns t_rr and 7 µC Q_rr are typical for high-voltage superjunction MOSFETs but exceed requirements for SR control. Dedicated synchronous rectifiers or GaN FETs are preferred for SR applications below 200 V.