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STMicroelectronics STP23NM50N
- Part No.:
- STP23NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP23NM50N.pdf
- Description:
- MOSFET N-CH 500V 17A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,911
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Product details
Overview
STP23NM50N from STMicroelectronics is an N-channel 500 V, 162 mΩ typ. (190 mΩ max), 17 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters requiring low gate charge (45 nC) and robust avalanche capability (254 mJ). It serves as a primary high-voltage power switch in offline SMPS and PFC stages.
For engineers reviewing the STP23NM50N datasheet, STP23NM50N pinout, STP23NM50N application, or STP23NM50N equivalent, key selection criteria include RDS(on) stability over temperature, unclamped inductive switching ruggedness, gate drive compatibility with 10 V logic, and thermal resistance (RthJC = 4.17 °C/W) in TO-220 mounting configurations.
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 1330 pF input capacitance (Ciss) and 4.8 pF reverse transfer capacitance (Crss) enable fast, controllable turn-on/turn-off with low EMI generation under hard-switching conditions.
The integrated source-drain diode exhibits 286 ns reverse recovery time (Trr) at 17 A and 100 A/µs di/dt, supporting quasi-resonant and transition-mode topologies. Avalanche rating of 6 A repetitive current and 254 mJ single-pulse energy confirms suitability for unclamped inductive load handling without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full mains rectified voltage (e.g., 375 V DC bus + margin) in universal-input AC-DC converters |
| RDS(on) | 162 mΩ typ. - Enables ≤2.8 W conduction loss at 17 A continuous drain current (TC = 25 °C) |
| Qg | 45 nC - Reduces gate driver power demand and enables efficient operation with standard 1-A peak drivers |
| EAS | 254 mJ - Supports reliable unclamped inductive switching up to 6 A avalanche current without failure |
| TJ(max) | 150 °C - Allows sustained operation in thermally constrained industrial enclosures with derated current |
| Crss | 4.8 pF - Minimizes Miller-induced shoot-through risk during high dv/dt switching (15 V/ns rated) |
| RthJC | 4.17 °C/W - Delivers 125 W total power dissipation capability when mounted on heatsink (TC = 25 °C) |
Pinout & Package
STP23NM50N uses TO-220 package with isolated tab (pin 2 = Drain, pin 1 = Gate, pin 3 = Source). The metal tab is electrically connected to the Drain terminal and must be insulated from chassis ground unless circuit topology requires common-Drain configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | High-impedance control input; requires 10 V drive for full enhancement; gate resistance 4.6 Ω limits ringing |
| Pin 2 (D / Tab) | Drain | Main high-voltage power terminal; tab is electrically active and thermally conductive - must be insulated if not referenced to HV rail |
| Pin 3 (S) | Source | Power return path and reference for gate drive; forms low-inductance loop with gate driver ground |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 254 mJ and repetitive IAR = 6 A performance per unit - no screening waivers |
| Low gate charge (Qg = 45 nC) | Reduces switching losses by >30% vs. legacy 500 V MOSFETs and enables higher-frequency operation (≥100 kHz) |
| MDmesh™ II vertical structure | Delivers 162 mΩ RDS(on) at 500 V - 40% lower on-resistance than first-gen MDmesh devices at same voltage rating |
| Low Crss (4.8 pF) | Suppresses Miller plateau duration and improves dV/dt immunity - critical for bridge-leg reliability in half-bridge PFC |
| 150 °C maximum junction temperature | Supports extended thermal headroom in sealed industrial power supplies without forced air cooling |
Applications
| Industrial AC-DC SMPS | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 1–3 kW open-frame power supply for factory automation controllers with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Main switch in LLC resonant converter primary side, operating at 200–500 kHz with zero-voltage switching. Use Value: Low Qg and Crss reduce gate drive loss and improve ZVS margin; 500 V rating covers 400 V DC bus with safety margin. |
Use Scenario: High-density 2 kW server power supply with active clamp forward or asymmetric half-bridge topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier control switch in high-side configuration with isolated gate driver. Use Value: 150 °C TJ(max) and 4.17 °C/W RthJC sustain full-load operation in compact heatsink envelopes; avalanche ruggedness handles clamp energy transients. |
| Telecom Rectifier Module | PFC Boost Stage |
|
Use Scenario: -48 V telecom rectifier with 3 kW output, operating in harsh ambient (60 °C baseplate temperature). IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge topology with synchronous rectification. Use Value: RDS(on) drift <1.7× from 25 °C to 125 °C ensures stable efficiency across temperature; 100% avalanche test assures field reliability under lightning surge events. |
Use Scenario: Two-phase interleaved boost PFC stage in 1.5 kW medical imaging power system. IC Role / Device Role / Timing Role: High-side boost switch operating in continuous conduction mode (CCM) at 65 kHz. Use Value: 286 ns Trr and 3.7 µC Qrr minimize diode recovery loss and EMI; low Ciss enables precise gate timing control across wide line/load range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW23NM50N | Same die, but in TO-247 package; RthJC = 0.85 °C/W; higher ID (23 A) due to improved thermal path | Preferred for >2 kW designs where PCB space allows TO-247 and heatsinking supports >200 W dissipation | Select when thermal budget is tighter and board layout permits larger footprint; not drop-in compatible with TO-220 socket |
| FDPF18N50 | 500 V, 180 mΩ max, 18 A; Qg = 52 nC; no 100% avalanche test; RthJC = 3.0 °C/W (TO-220FP) | Suitable for cost-sensitive consumer PSUs where avalanche stress is mitigated by design | Choose for non-critical industrial applications with controlled inductive loads and lower reliability requirements |
Compared with STW23NM50N, STP23NM50N trades thermal performance for mechanical compatibility and lower cost; versus FDPF18N50, it delivers verified avalanche ruggedness and lower gate charge - critical for high-reliability PFC and SMPS primary switches.
Availability
STP23NM50N is available at Aetrix Electronics and suitable for industrial AC-DC SMPS, telecom rectifier modules, and PFC boost stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STP23NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STP23NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including server PSUs, industrial SMPS, and telecom infrastructure where low RDS(on), low Qg, and guaranteed avalanche capability are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STP23NM50N supports 11 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6645 Rev 5. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.
Does STP23NM50N have an integrated body diode, and what are its recovery characteristics?
Yes, STP23NM50N includes a monolithic source-drain body diode with typical reverse recovery time (trr) of 286 ns at ISD = 17 A, di/dt = 100 A/µs, and VDD = 60 V (TJ = 25 °C). Qrr is 3.7 µC, enabling use in transition-mode and quasi-resonant converters without external diode replacement.
Can STP23NM50N be used in avalanche mode, and what is its rated single-pulse energy?
Yes - STP23NM50N is 100% avalanche tested with a rated single-pulse avalanche energy (EAS) of 254 mJ at VDD = 50 V, IAR = 6 A, and starting TJ = 25 °C. This rating is validated per JEDEC JESD24-11 and supports unclamped inductive switching in flyback and forward converters.
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(th) is specified from 2 V to 4 V at TC = 25 °C (Table 4), with typical value 3 V. Figure 11 shows normalized VGS(th) decreases to ~0.8× at TJ = 150 °C, meaning threshold drops to ~2.4 V - critical for ensuring turn-on margin across full temperature range with 10 V gate drive.
STP23NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1330 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP23NM50N FAQ
1.How can I place an order for STP23NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP23NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP23NM50N reliable?
The price and inventory of STP23NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP23NM50N is usually 5 days.
3.What payment methods are accepted for STP23NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP23NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP23NM50N?
STP23NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP23NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP23NM50N?
For technical support, including STP23NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP23NM50N requirements.
6.How does Aetrix verify that STP23NM50N is sourced from the original manufacturer or authorized distributors?
All STP23NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP23NM50N meets industry standards.
7.What is the process for return or replacement of STP23NM50N?
All STP23NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP23NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP23NM50N part is unused and in its original packaging.
Return procedure for STP23NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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