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STMicroelectronics STP23NM60N

Part No.:
STP23NM60N
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP23NM60N.pdf
Description:
MOSFET N-CH 600V 19A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,366

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Product details

Overview

STP23NM60N from STMicroelectronics is an N-channel 600 V, 0.150 Ω RDS(on), 19 A TO-220 packaged MDmesh™ II Power MOSFET designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, low gate charge (60 nC), and optimized capacitance profile for fast, low-loss hard-switching.

For engineers reviewing the STP23NM60N datasheet, STP23NM60N pinout, STP23NM60N application, or STP23NM60N equivalent, key selection criteria include its 600 V VDSS, 0.150 Ω max RDS(on) at 10 VGS, 60 nC total gate charge, 150 °C Tj rating, and TO-220 thermal resistance of 0.83 °C/W (junction-to-case).

Technical Context

This second-generation MDmesh™ device uses a proprietary vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 2050 pF Ciss, 140 pF Coss, and 8 pF Crss enable stable high-frequency operation up to 100 kHz in continuous conduction mode PFC.

The MOSFET integrates a robust body diode with 470 ns reverse recovery time and 7 µC Qrr at 25 °C, supporting ZVS-capable topologies. Its 15 V/ns dv/dt immunity and 9 A IAS repetitive avalanche rating ensure reliability under transient overvoltage and inductive turn-off stress.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 600 V - Withstands full mains rectified voltage in 230 VAC systems with margin
RDS(on) max 0.150 Ω @ VGS = 10 V - Enables <1.4 W conduction loss at 19 A DC
Qg 60 nC - Reduces gate drive power and enables use with standard 1-A peak drivers
Ciss 2050 pF - Supports stable 100 kHz switching with minimal Miller-induced oscillation risk
Tj max 150 °C - Allows operation in sealed enclosures without forced air cooling
Rthj-case 0.83 °C/W - Delivers 150 W dissipation capability with standard TO-220 heatsink
EAS 700 mJ - Sustains single-pulse inductive energy without failure in unclamped tests

Pinout & Package

STP23NM60N is housed in a through-hole TO-220 package with isolated tab (pin 2), compliant with JEDEC TO-220AB mechanical standard and ECOPACK® lead-free finish.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Power return path for load current Low-inductance connection point; ties directly to PCB ground plane for EMI control
2 (Drain) Main high-side power terminal Internally connected to metal tab - electrically active and thermally critical
3 (Gate) Control input for channel modulation High-impedance node requiring <100 Ω series resistance to suppress ringing during fast transitions

Key Features

Feature Design Value
100% avalanche tested Guarantees 9 A IAS and 700 mJ EAS performance across production lot - eliminates need for external snubbers in flyback clamp circuits
Low Qg/RDS(on) ratio 60 nC / 0.150 Ω = 400 nC·Ω - superior figure-of-merit vs. first-gen 600 V MOSFETs, enabling higher efficiency at 65–100 kHz
Optimized Coss linearity Coss eq. = 260 pF from 0–480 V - ensures predictable turn-off timing and reduced voltage overshoot in LLC resonant converters
Fast body diode recovery trr = 470 ns, Qrr = 7 µC - minimizes commutation loss in synchronous rectification and half-bridge freewheeling

Applications

Server PSU Primary Switch Industrial AC-DC Front-End

Use Scenario: High-density 1 kW server power supply operating in continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: Main switching element in boost PFC converter, switching at 65 kHz with 19 A peak inductor current.

Use Value: 0.150 Ω RDS(on) limits conduction loss to ≤1.4 W; 60 nC Qg allows direct drive from UCC28070 controller without buffer.

Use Scenario: 3 kW industrial AC-DC converter with dual interleaved PFC modules.

IC Role / Device Role / Timing Role: High-side switch in each 1.5 kW interleaved boost leg, operating at 50 kHz with thermal cycling.

Use Value: 150 °C Tj rating and 0.83 °C/W Rthj-case support >125 °C ambient operation with passive heatsinking.

Motor Drive Inverter Stage UPS Inverter Output Stage

Use Scenario: 5 HP variable frequency drive using six-pack TO-220-based inverter module.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge, handling 19 A RMS output current with 10 kHz PWM.

Use Value: 470 ns trr and low Qrr reduce shoot-through risk and diode conduction loss during dead-time commutation.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from battery-backed DC bus.

IC Role / Device Role / Timing Role: Output H-bridge switch in 10 kHz SPWM inverter stage, managing reactive loads.

Use Value: 600 V VDSS withstands 400 V DC bus transients; 700 mJ EAS absorbs inductive kickback from transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP60R190C6 650 V, 0.190 Ω RDS(on), 65 nC Qg, TO-220 - higher RDS(on) but lower Coss (1250 pF) Better suited for >150 kHz resonant topologies where capacitance dominates loss Select when prioritizing switching loss over conduction loss in high-frequency designs
STW23NM60N Same die, TO-247 package - 0.35 °C/W Rthj-case, 35 W PTOT vs. 150 W for STP23NM60N Required for >150 W continuous dissipation or forced-air-cooled systems Choose when thermal budget exceeds TO-220 capability or heatsink space permits larger footprint

Compared with IPP60R190C6, STP23NM60N delivers 21% lower conduction loss at 19 A but trades 64% higher Ciss; versus STW23NM60N, it offers identical electrical specs in a lower-cost, smaller-footprint package with 4.7× higher thermal resistance - ideal for cost-sensitive 100–150 W applications.

Availability

STP23NM60N is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC front-ends, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP23NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

STP23NM60N belongs to the MDmesh™ II family - engineered specifically for high-efficiency, high-voltage switching in offline power conversion, emphasizing low RDS(on)/Qg trade-off optimization.

FAQ

Is STP23NM60N pin-compatible with other ST 23NM60x devices?

Yes - STP23NM60N shares identical TO-220 pinout (Drain-Source-Gate) with STF23NM60N (TO-220FP) and STI23NM60N (I²PAK), though thermal and mounting constraints differ. Mechanical compatibility does not imply identical SOA or thermal derating curves; always verify safe operating area per package type.

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω to 22 Ω gate resistor is recommended to balance switching speed and ringing suppression. At 10 VGS, 60 nC Qg, and 10 Ω RG, turn-on delay is ~25 ns and rise time ~15 ns - matching typical 65 kHz PFC timing requirements while limiting dV/dt-induced false triggering.

Does STP23NM60N require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. Its ±25 V VGS rating supports optional –5 V turn-off for enhanced noise immunity in noisy industrial environments, but is not required for normal operation or avalanche robustness.

Can STP23NM60N be used in synchronous rectification configurations?

No - it is an N-channel high-side/main switch, not optimized as a synchronous rectifier. Its body diode trr (470 ns) and Qrr (7 µC) are suitable for freewheeling but lack the ultra-low VSD (<0.5 V) and sub-100 ns trr needed for efficient SR replacement in LLC or forward converters.

STP23NM60N Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
2050 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP23NM60N FAQ

1.How can I place an order for STP23NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP23NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP23NM60N reliable?

The price and inventory of STP23NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP23NM60N is usually 5 days.

3.What payment methods are accepted for STP23NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP23NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP23NM60N?

STP23NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP23NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP23NM60N?

For technical support, including STP23NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP23NM60N requirements.

6.How does Aetrix verify that STP23NM60N is sourced from the original manufacturer or authorized distributors?

All STP23NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP23NM60N meets industry standards.

7.What is the process for return or replacement of STP23NM60N?

All STP23NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP23NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP23NM60N part is unused and in its original packaging.

Return procedure for STP23NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STP23NM60N Tags

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