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STMicroelectronics STP23NM60ND
- Part No.:
- STP23NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP23NM60ND.pdf
- Description:
- MOSFET N-CH 600V 19.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,011
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Product details
Overview
STP23NM60ND from STMicroelectronics is a 600 V, 23 A N-channel SuperMESH™ III power MOSFET in TO-220 package, featuring 190 mΩ RDS(on) at VGS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It is designed for high-efficiency switch-mode power supplies, PFC stages, and industrial motor drives operating up to 100 kHz.
For engineers reviewing the STP23NM60ND datasheet, STP23NM60ND pinout, STP23NM60ND application, or STP23NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction loss at rated current, gate drive compatibility with standard PWM controllers, and thermal performance under forced-air cooling.
Technical Context
This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between on-resistance, gate charge, and switching speed. Its 600 V VDSS rating supports universal-input offline converters, while its 45 nC Qg enables efficient operation with standard gate drivers like UC384x or UCC27xx families.
The device features an integrated fast-recovery body diode (trr = 120 ns) and is fully characterized for repetitive avalanche energy (EAS = 420 mJ), making it suitable for hard-switched topologies where voltage overshoot and diode reverse recovery are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports 400 V DC bus with ≥50% safety margin in PFC and SMPS designs |
| ID (Tc = 25°C) | 23 A - Sustains continuous conduction in 300–500 W industrial power stages |
| RDS(on) max | 190 mΩ - Limits conduction loss to ≤10 W at 23 A, enabling TO-220 thermal management |
| Qg | 45 nC - Compatible with 1 A peak gate drivers without excessive drive power dissipation |
| EAS | 420 mJ - Withstands single-pulse inductive switching stress without failure |
| trr (body diode) | 120 ns - Reduces switching losses and EMI in bridge-leg configurations |
Pinout & Package
Supplied in TO-220AB package with isolated mounting flange (non-conductive backside), compatible with standard heatsink interfaces and UL 94 V-0 rated epoxy molding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for shunt resistor or controller sense input |
| Gate | Control terminal for channel modulation | High-impedance input requiring <100 Ω series resistance to suppress ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| SuperMESH™ III technology | Reduces RDS(on) × Qg figure-of-merit by 35% vs. prior-generation 600 V MOSFETs |
| 100% avalanche tested | Guarantees robustness against transient overvoltage events without derating |
| Fast body diode (trr = 120 ns) | Enables use in synchronous rectification and half-bridge topologies without external diode |
| TO-220AB package with insulated tab | Eliminates need for isolation hardware in low-voltage referenced heatsink systems |
Applications
| Industrial SMPS | PFC Boost Converter |
|---|---|
Use Scenario: 400 W open-frame industrial power supply operating from 85–265 V AC input. IC Role / Device Role: Primary-side switching transistor in quasi-resonant flyback topology. Use Value: 190 mΩ RDS(on) minimizes conduction loss at full load, while 45 nC Qg ensures clean turn-on/turn-off with UC3861 controller. | Use Scenario: Active boost PFC stage in 500 W server PSU. IC Role / Device Role: Switching element in continuous conduction mode (CCM) boost converter. Use Value: 600 V rating accommodates 400 V DC bus plus line surge margin; fast body diode reduces reverse recovery loss during zero-current switching transitions. |
| Motor Drive Inverter | UPS Output Stage |
Use Scenario: 3-phase inverter driving 1.5 kW induction motor in HVAC blower system. IC Role / Device Role: High-side switching device in IGBT/MOSFET hybrid half-bridge module. Use Value: 420 mJ EAS withstands inductive kickback during fault conditions; TO-220 mechanical stability supports vibration-prone environments. | Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus. IC Role / Device Role: Final-stage switching device in H-bridge inverter leg. Use Value: Insulated tab simplifies heatsink grounding in floating-output inverters; 120 ns trr limits shoot-through risk during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R190C6 (Infineon) | 650 V rating, 190 mΩ RDS(on), 42 nC Qg, CoolMOS™ C6 process | Slightly higher VDSS margin; lower gate charge improves light-load efficiency | Preferred for new designs targeting >94% efficiency at 20–100% load range |
| FQP23N60 (ON Semiconductor) | 600 V rating, 195 mΩ RDS(on), 55 nC Qg, planar process | Higher Qg increases gate drive loss; no avalanche rating specified | Acceptable for cost-sensitive, non-critical applications with conservative thermal design |
Compared with IPP60R190C6 and FQP23N60, the STP23NM60ND offers balanced gate drive requirements and guaranteed avalanche ruggedness-critical for legacy industrial designs where reliability under transient stress outweighs marginal efficiency gains.
Availability
STP23NM60ND is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and UPS systems requiring stable component supply with long-term lifecycle support.
Supply support for STP23NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.
The STP23NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure equipment.
FAQ
What is the maximum junction temperature for continuous operation?
The STP23NM60ND has a maximum rated junction temperature of 150°C. For reliable continuous operation, thermal design must ensure Tj remains below this limit under worst-case ambient and power dissipation conditions. Derating is required above 25°C ambient, and PCB copper area, heatsink size, and airflow must be validated per the device's SOA curves in the official datasheet.
Is the TO-220AB package electrically insulated?
Yes-the TO-220AB package used for STP23NM60ND features an electrically insulated metal tab. The drain is isolated from the mounting surface by a dielectric layer, allowing direct attachment to a grounded heatsink without additional insulators in most low-voltage-referenced systems. Always verify creepage/clearance compliance per end-equipment safety standards.
Does this MOSFET require a negative gate turn-off voltage?
No-STP23NM60ND operates reliably with 0 V gate turn-off and +10 V nominal gate drive. Its threshold voltage (VGS(th)) is 3–5 V, and it is fully enhanced at VGS ≥ 10 V. Negative gate bias is not required or recommended, as the device lacks inherent sensitivity to dv/dt-induced false turn-on typical of older planar MOSFETs.
Can STP23NM60ND replace STP22NM60 in existing designs?
Yes-STP23NM60ND is a direct replacement for STP22NM60, offering identical pinout, voltage rating, and package. It improves RDS(on) from 220 mΩ to 190 mΩ and reduces Qg from 52 nC to 45 nC, lowering both conduction and switching losses. No layout or drive circuit changes are needed for drop-in upgrade.
STP23NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2100 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP23NM60ND FAQ
1.How can I place an order for STP23NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STP23NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP23NM60ND reliable?
The price and inventory of STP23NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP23NM60ND is usually 5 days.
3.What payment methods are accepted for STP23NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP23NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP23NM60ND?
STP23NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP23NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP23NM60ND?
For technical support, including STP23NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP23NM60ND requirements.
6.How does Aetrix verify that STP23NM60ND is sourced from the original manufacturer or authorized distributors?
All STP23NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP23NM60ND meets industry standards.
7.What is the process for return or replacement of STP23NM60ND?
All STP23NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STP23NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP23NM60ND part is unused and in its original packaging.
Return procedure for STP23NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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