STMicroelectronics STP240N10F7

Overview

STP240N10F7 from STMicroelectronics is an N-channel 100 V, 2.85 mΩ typ. R_DS(on), 110 A continuous drain current Power MOSFET in TO-220 package, utilizing STripFET™ F7 trench-gate technology for ultra-low conduction loss and fast switching. It is rated for 500 mJ single-pulse avalanche energy and operates up to 175 °C junction temperature, deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the STP240N10F7 datasheet, STP240N10F7 pinout, STP240N10F7 application, or STP240N10F7 equivalent, key selection criteria include its 3.2 mΩ max R_DS(on) at V_GS = 10 V, 160 nC total gate charge, 11550 pF input capacitance, and TO-220 thermal resistance of 0.5 °C/W junction-to-case - critical for high-efficiency, thermally constrained power stages.

Technical Context

This MOSFET employs STripFET™ F7's enhanced trench gate structure to simultaneously reduce R_DS(on), output capacitance (C_oss = 2950 pF), and reverse transfer capacitance (C_rss = 217 pF), enabling high-frequency hard-switching with low switching losses. Its 100% avalanche-tested construction ensures robustness under unclamped inductive load conditions.

The device supports gate drive voltages from ±20 V, with a gate threshold voltage range of 2.5–4.5 V and fast switching times (t_d(on) = 49 ns, t_f = 112 ns) under 4.7 Ω gate resistance. Its integrated source-drain diode exhibits 108 ns reverse recovery time and 315 nC Q_rr at T_j = 150 °C, making it suitable for synchronous rectification and freewheeling roles.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (pin 1: Gate, pin 2: Drain, pin 3: Source; metal tab electrically connected to Drain). Standard through-hole mounting with screw-down heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-current power MOSFET applications.

Compared with IXTH120N10L2 and IRFP4868PBF, STP240N10F7 delivers the lowest R_DS(on) in TO-220 form factor with guaranteed avalanche capability - ideal for cost-sensitive, space-constrained 100 A power stages where thermal performance and ruggedness are prioritized over gate drive simplicity.

Availability

STP240N10F7 is available at Aetrix Electronics and suitable for motor drives, high-current DC-DC converters, industrial UPS inverters, and automotive DC fast-charge modules requiring stable component supply across multi-year production cycles.

Supply support for STP240N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power conversion systems, delivering optimized R_DS(on)-Q_g trade-offs for 60–150 V MOSFETs used in switched-mode power supplies, motor controls, and renewable energy inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP240N10F7 maintains 110 A continuous drain current rating at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects its robust thermal design and low R_DS(on), enabling sustained high-current operation without derating in well-heatsinked applications.

Is the metal tab electrically isolated from the drain in the TO-220 package?

No - the metal tab is internally connected to the drain (pin 2) and must be electrically insulated from the heatsink unless the drain node is at chassis ground potential. This configuration enables direct thermal coupling while requiring appropriate isolation hardware (e.g., mica washers or silicone pads) in floating topologies.

Does STP240N10F7 support gate drive voltages below 10 V?

Yes - the gate threshold voltage ranges from 2.5 V to 4.5 V, allowing partial enhancement at 5 V. However, full conduction (R_DS(on) ≤ 3.2 mΩ) requires V_GS ≥ 10 V. Driving at 5 V yields significantly higher on-resistance and is unsuitable for high-efficiency applications.

How does the 500 mJ avalanche rating translate to real-world reliability?

The 500 mJ single-pulse avalanche energy rating is measured under standardized unclamped inductive switching (UIS) conditions (T_j = 25 °C, I_D = 45 A, V_DD = 50 V). It guarantees the device survives transient overvoltage events common in motor commutation and relay switching without parametric shift or catastrophic failure.