STMicroelectronics STP24N60DM2

Overview

STP24N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in TO-220 package, designed for primary-side switching in high-efficiency bridge and ZVS phase-shift converters. It features 600 V V_DS, 175 mΩ typ. R_DS(on), 18 A continuous drain current at T_C = 25 °C, fast-recovery body diode (t_rr = 155 ns), and 100% avalanche tested (E_AS = 180 mJ).

For engineers reviewing the STP24N60DM2 datasheet, STP24N60DM2 pinout, STP24N60DM2 application, or STP24N60DM2 equivalent, key selection criteria include dv/dt ruggedness (50 V/ns), low Q_g (29 nC), C_iss (1055 pF), and Zener-protected gate - critical for hard-switched SMPS and industrial motor drives.

Technical Context

This MDmesh DM2-series MOSFET integrates an optimized fast-recovery body diode with ultra-low Q_rr (0.956 µC) and t_rr, enabling reduced switching losses in resonant topologies. Its R_DS(on) remains stable across temperature (R_DS(on) norm. = 1.9× at T_J = 150 °C), supporting reliable operation in high-temperature environments.

The device employs a planar silicon process with Zener-protected gate oxide and exhibits exceptional dv/dt immunity (50 V/ns MOSFET ruggedness, 40 V/ns diode recovery), making it suitable for noisy industrial bus interfaces and unclamped inductive loads without external snubbers.

Key Specifications

Pinout & Package

STP24N60DM2 is housed in a TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when used in non-isolated topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and FDPF18N60NZ, STP24N60DM2 uniquely combines Zener gate protection, 50 V/ns dv/dt ruggedness, and 155 ns t_rr - making it the only option qualified for unclamped inductive switching in safety-critical motor drives without additional protection circuitry.

Availability

STP24N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, server PSU front-end designs, and EV on-board charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for STP24N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs with vertical manufacturing capability.

STP24N60DM2 belongs to the MDmesh DM2 series - engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power conversion, emphasizing fast diode recovery, avalanche robustness, and gate ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP24N60DM2 supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10027 Rev 4. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries up to 150 °C junction temperature.

Does STP24N60DM2 require external gate protection?

No - STP24N60DM2 integrates Zener-protected gate oxide rated for ±25 V, eliminating the need for external gate Zener diodes in standard applications. External clamping is only required if gate drive transients exceed ±25 V or if system-level ESD exceeds IEC 61000-4-2 Level 4.

How does its body diode performance compare to standard 600 V MOSFETs?

STP24N60DM2's body diode achieves t_rr = 155 ns and Q_rr = 0.956 µC at 18 A, which is 40–60% lower than typical 600 V MOSFETs (e.g., 250–350 ns t_rr). This directly reduces reverse recovery loss and EMI in bridge configurations, verified via Figure 17 test circuit in DS10027.

Can STP24N60DM2 replace STP24N60M2 in existing designs?

Yes - STP24N60DM2 is a direct upgrade to STP24N60M2, offering identical pinout and package but improved Q_rr (−35%), lower R_DS(on) (−12%), and enhanced dv/dt ruggedness (50 V/ns vs. 35 V/ns). No layout or gate drive changes are needed for drop-in replacement.