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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP24N60M2

Name: STP24N60M2
Brand: STMicroelectronics
SKU: STP24N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP24N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP24N60M2.pdf

Description:: MOSFET N-CH 600V 18A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,003

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Product details

Overview

STP24N60M2 from STMicroelectronics is an N-channel 600 V, 168 mΩ typ. (190 mΩ max), 18 A Power MOSFET in TO-220 package, built on MDmesh M2 technology. It delivers low gate charge (29 nC), optimized Coss profile (55 pF), and 100% avalanche-tested ruggedness for high-efficiency AC-DC and DC-DC converters.

For engineers reviewing the STP24N60M2 datasheet, STP24N60M2 pinout, STP24N60M2 application, or STP24N60M2 equivalent, key selection criteria include its 600 V blocking voltage, 150 W power dissipation at TC = 25 °C, 15 V/ns diode recovery dv/dt rating, and Zener-protected gate structure for robust gate drive resilience.

Technical Context

This device uses ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low RDS(on) and minimized switching losses. Its 29 nC total gate charge and 12 nC Qgd enable fast, controllable turn-on/turn-off transitions under hard-switching conditions.

The integrated body diode exhibits 332 ns reverse recovery time (TJ = 25 °C) and 4 µC Qrr, with Zener protection between gate and source ensuring ±25 V VGS tolerance and immunity to transient overvoltage during layout parasitic coupling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Sustains full mains-derived bus voltages in offline SMPS without derating
R_DS(on)	168 mΩ typ. - Enables <1.5 W conduction loss at 9 A continuous drain current
Q_g	29 nC - Reduces gate driver power demand and enables higher PWM frequencies
C_oss	55 pF - Minimizes capacitive turn-off energy loss in resonant and quasi-resonant topologies
E_AS	180 mJ - Supports unclamped inductive switching stress without failure
T_J max	150 °C - Allows operation in thermally constrained industrial enclosures with margin
dV/dt ruggedness	50 V/ns - Withstands rapid voltage transients during commutation in PFC and LLC stages

Pinout & Package

STP24N60M2 is housed in a TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in non-isolated configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires ≤±25 V drive and low-inductance routing to suppress ringing
2 (Center)	Drain (D)	Main high-voltage power path; electrically tied to metal tab - must be isolated from heatsink unless referenced to same potential
3 (Right)	Source (S)	Return path for load current; serves as local ground reference for gate drive loop

Key Features

Feature	Design Value
MDmesh M2 silicon process	Delivers 168 mΩ RDS(on) at 600 V - 25% lower on-resistance than prior-generation 600 V MOSFETs
Zener-protected gate	Integrated gate-source clamp ensures reliable operation under ±25 V transients without external TVS
100% avalanche rated	Guarantees single-pulse EAS = 180 mJ - eliminates need for external snubbers in flyback and forward converters
Low Coss eq. (258 pF)	Reduces turn-off switching loss by >30% vs. standard superjunction devices at 400 V bus
Optimized diode recovery	Qrr = 4 µC and trr = 332 ns enable clean zero-current switching in critical conduction mode (CRM) PFC

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3.3 kW server power supply operating in continuous conduction mode (CCM) with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switching transistor in LLC resonant half-bridge, switching at 250–500 kHz.

Use Value: 29 nC Qg and 55 pF Coss reduce gate drive loss and capacitive turn-off energy, enabling >96% efficiency at full load.

Use Scenario: 7.5 kW variable-frequency drive controlling 3-phase induction motor in HVAC system.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6-pack inverter module, driven by isolated gate driver.

Use Value: 150 W power dissipation and 150 °C T_J max support sustained 12 A RMS output with forced-air cooling.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: -48 V telecom rectifier with active clamp forward topology and 380 V DC output.

IC Role / Device Role / Timing Role: Main switch in active clamp circuit, handling 18 A peak current at 100 kHz.

Use Value: 190 mΩ max RDS(on) limits conduction loss to <2.5 W, reducing thermal footprint on PCB-mounted heatsink.

Use Scenario: 6.6 kW bidirectional OBC using interleaved boost PFC with 650 V bus.

IC Role / Device Role / Timing Role: Boost switch in high-side position, subjected to 600 V blocking and 18 A average current.

Use Value: 100% avalanche testing and 50 V/ns dv/dt ruggedness prevent failure during line surge events and phase imbalance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N60M2	Same die, TO-247 package - lower R_thJC (0.83 °C/W vs. 0.83 °C/W identical) but larger footprint and higher cost	Better thermal performance in high-power (>200 W) open-frame designs with direct heatsink mounting	Select when junction-to-case thermal resistance must be maintained under >100 W continuous dissipation
IPP60R190C7	Infineon CoolMOS C7 - 190 mΩ @ 600 V, 22 nC Qg, but no integrated Zener protection and lower EAS (120 mJ)	Suitable for cost-sensitive consumer PSUs where gate protection is implemented externally	Choose only if external gate clamping is acceptable and avalanche margin is verified in system-level testing

Compared with STW24N60M2, STP24N60M2 offers identical electrical specs in a smaller, lower-cost TO-220 package ideal for space-constrained industrial PSUs; versus IPP60R190C7, it provides superior gate ruggedness and avalanche reliability without added BOM components.

Availability

STP24N60M2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STP24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh M2 product line targets high-efficiency switched-mode power supplies, delivering best-in-class RDS(on) × Qg figure-of-merit for 500–650 V applications in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for STP24N60M2 at 100 °C case temperature?

The maximum continuous drain current ID is 12 A at TC = 100 °C, as specified in Table 1 of DS9377 Rev 6. This derating from 18 A (at TC = 25 °C) reflects thermal limitations of the TO-220 package under elevated ambient conditions and must be applied in thermal design calculations.

Does STP24N60M2 require an external gate resistor for safe operation?

Yes - a gate resistor (typically 4.7 Ω to 22 Ω) is required to control dV/dt and di/dt during switching. The datasheet specifies switching times with RG = 4.7 Ω (Table 6), and omitting this resistor risks oscillation, shoot-through, and gate oxide damage due to uncontrolled ringing.

Can STP24N60M2 replace older STP24NM60 in existing designs?

Yes - STP24N60M2 is a direct drop-in upgrade to STP24NM60, offering lower RDS(on) (168 mΩ vs. 220 mΩ), reduced Qg (29 nC vs. 45 nC), and improved dv/dt ruggedness (50 V/ns vs. 35 V/ns), with identical TO-220 pinout and voltage ratings.

Is the TO-220 tab of STP24N60M2 electrically isolated from the leads?

No - the metal tab is internally connected to the drain terminal (Pin 2). Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the drain potential; ST recommends using insulating pads or shoulder washers compliant with IEC 60950-1 creepage requirements.

STP24N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP24N60M2 FAQ

1.How can I place an order for STP24N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP24N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP24N60M2 reliable?

The price and inventory of STP24N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP24N60M2 is usually 5 days.

3.What payment methods are accepted for STP24N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP24N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP24N60M2?

STP24N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP24N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP24N60M2?

For technical support, including STP24N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP24N60M2 requirements.

6.How does Aetrix verify that STP24N60M2 is sourced from the original manufacturer or authorized distributors?

All STP24N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP24N60M2 meets industry standards.

7.What is the process for return or replacement of STP24N60M2?

All STP24N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP24N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP24N60M2 part is unused and in its original packaging.

Return procedure for STP24N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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