STMicroelectronics STP24N60M6

Overview

STP24N60M6 from STMicroelectronics is an N-channel 600 V, 17 A MDmesh M6 superjunction power MOSFET in TO-220 package, featuring 162 mΩ typ. R_DS(on), 23 nC total gate charge, and 100% avalanche tested ruggedness. It delivers low conduction and switching losses for high-efficiency LLC and boost PFC converters operating at elevated frequencies and temperatures.

For engineers reviewing the STP24N60M6 datasheet, STP24N60M6 pinout, STP24N60M6 application, or STP24N60M6 equivalent, key selection criteria include its 15 V/ns diode recovery dv/dt capability, 225 ns reverse recovery time at 150 °C, Zener-protected gate, and 130 W power dissipation at T_C = 25 °C - all critical for reliable high-voltage hard-switching topologies.

Technical Context

This MOSFET implements ST's MDmesh M6 technology, combining optimized charge balancing with reduced cell pitch to achieve lower R_DS(on)/area versus prior MDmesh generations. Its 960 pF input capacitance and 4.5 pF reverse transfer capacitance support fast, controllable switching under 480 V bus conditions.

The device integrates a robust intrinsic body diode with 2.3 µC Q_rr (25 °C) and 3.85 µC Q_rr (150 °C), enabling stable operation in resonant and inductive-switching circuits without external snubbing. Gate threshold voltage remains stable across temperature (±15% variation from –75 to 150 °C), ensuring consistent turn-on behavior in wide-temperature industrial environments.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (DRAIN connected to metal tab); industry-standard through-hole mounting and heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPP60R190C7 and IXTH16N60L2, STP24N60M6 offers superior ZVS efficiency at 400 V bus due to lower C_oss eq. and tighter R_DS(on) distribution, while its 100% avalanche test and Zener gate provide verified fault tolerance missing in both alternatives.

Availability

STP24N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for STP24N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh M6 product line targets high-efficiency, high-reliability switched-mode power supplies - specifically engineered to reduce both conduction and switching losses in 600–650 V hard- and soft-switching topologies.

FAQ

Is STP24N60M6 suitable for zero-voltage switching (ZVS) operation?

Yes. With 181 pF equivalent output capacitance and 23 nC total gate charge, STP24N60M6 achieves reliable ZVS in LLC resonant converters operating at 100–300 kHz and 400 V DC bus. Its low C_oss/C_iss ratio enhances voltage-dependent capacitance linearity, extending the ZVS range across load and temperature.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 10.7 A at T_C = 100 °C, as specified in Table 1 of DS12716 Rev 2. This derating accounts for thermal resistance (R_thJC = 0.96 °C/W) and safe operating area limits - not ambient temperature alone.

Does STP24N60M6 require external gate protection?

No. The device integrates a Zener diode between gate and source, rated for ±25 V, eliminating the need for external gate clamping components in typical industrial switching applications. This simplifies layout and improves reliability in EMI-prone environments.

How does the body diode performance compare at elevated temperature?

At 150 °C junction temperature, reverse recovery time increases to 387 ns (from 225 ns at 25 °C) and Q_rr rises to 3.85 µC (from 2.3 µC). These values remain tightly controlled and fully characterized - enabling accurate loss modeling in high-temperature PFC and inverter designs.