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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP24N65M2

Name: STP24N65M2
Brand: STMicroelectronics
SKU: STP24N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP24N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP24N65M2.pdf

Description:: MOSFET N-CH 650V 16A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:2,417

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Product details

Overview

STP24N65M2 from STMicroelectronics is an N-channel 650 V, 185 mΩ typ. (230 mΩ max.), 16 A MDmesh™ M2 Power MOSFET in TO-220FP package, optimized for high-efficiency flyback and PFC stages in industrial SMPS. It features 29 nC total gate charge, 47.5 pF output capacitance, and 100% avalanche tested ruggedness.

For engineers reviewing the STP24N65M2 datasheet, STP24N65M2 pinout, STP24N65M2 application, or STP24N65M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 150 W power dissipation at TC = 25 °C, Zener-protected gate, and low Coss profile for reduced switching loss in hard-switched converters.

Technical Context

This device uses ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low RDS(on) while maintaining high voltage blocking and fast switching. Its 1.65 pF Crss and 229 pF Coss_eq support efficient zero-voltage transition in resonant topologies.

The integrated source-drain diode delivers 16 A continuous current with 350 ns trr at TJ = 25 °C and 496 ns at 150 °C, enabling reliable operation in discontinuous conduction mode (DCM) PFC and synchronous rectification where body diode commutation occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in universal-input offline SMPS up to 400 V DC bus with margin.
R_DS(on) max	230 mΩ @ V_GS = 10 V, I_D = 8 A - Limits conduction loss to ≤2.9 W at 16 A, critical for thermal management in enclosed enclosures.
Q_g	29 nC - Reduces gate drive power requirement and enables use with low-current drivers like UC384x derivatives.
C_oss	47.5 pF - Low stored energy (E_oss ≈ 6.4 µJ at 520 V) minimizes turn-on loss in hard-switched applications.
E_AS	650 mJ - Supports unclamped inductive switching in PFC boost stages without external snubbers.
T_J max	150 °C - Allows operation in high-ambient environments (e.g., industrial motor drives) with appropriate heatsinking.
R_thJC	4.2 °C/W - Enables direct thermal coupling to heatsink; 150 W dissipation yields ≤630 °C junction rise above case at full load.

Pinout & Package

TO-220FP package: insulated tab, 3-pin through-hole outline with internal isolation between drain (tab), gate (pin 1), and source (pin 3). Mounting requires no insulating washer due to 2.5 kV RMS insulation rating from leads to heat sink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control input; 7 Ω intrinsic gate resistance limits ringing and simplifies RC damping design.
Pin 2 (D / TAB)	Drain (exposed metal tab)	Primary high-voltage node; electrically isolated from mounting surface-enables direct heatsink attachment without isolation hardware.
Pin 3 (S)	Source	Power return path and gate reference; ties to PCB ground plane for low-inductance source loop in high-di/dt switching.

Key Features

Feature	Design Value
Extremely low gate charge	29 nC total charge enables <5 W gate driver power at 100 kHz, reducing driver IC cost and footprint.
Optimized C_oss profile	47.5 pF C_oss with 229 pF C_{oss_eq} ensures predictable turn-on timing and low E_oss across operating voltage range.
Zener-protected gate	±25 V V_GS rating with integrated Zener clamp prevents gate oxide failure during transient overvoltage events.
100% avalanche tested	Each unit validated for 2.2 A repetitive avalanche current and 650 mJ single-pulse energy-guarantees robustness in overload conditions.

Applications

Industrial SMPS

Server PSU

Use Scenario: 1–3 kW open-frame AC/DC power supplies with active PFC and LLC resonant secondary stage.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) PFC boost converter; operates at 65–100 kHz with 50 V/ns dv/dt stress.

Use Value: Low Q_g and C_oss reduce switching losses by ≥12% vs. legacy 600 V Superjunction MOSFETs, improving full-load efficiency to >96%.

Use Scenario: Hot-swap capable 48 V intermediate bus converters in multi-rail server power architectures.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck regulator delivering 100 A at 12 V; handles 16 A peak per phase in multiphase configuration.

Use Value: 150 W power rating and 4.2 °C/W R_thJC allow direct heatsink mounting without thermal interface material, simplifying assembly and improving long-term reliability.

Telecom Rectifiers

EV Charger Auxiliary Supply

Use Scenario: -48 V telecom rectifier modules with hold-up time extension using boost-derived auxiliary converters.

IC Role / Device Role / Timing Role: Main switch in flyback-derived auxiliary supply powering control logic and gate drivers; operates in DCM with 350 ns diode recovery.

Use Value: Integrated 1.6 V V_SD body diode enables self-driven synchronous rectification in auxiliary windings, eliminating discrete Schottky diodes and saving board space.

Use Scenario: Onboard charger (OBC) auxiliary power supply providing isolated 15 V/2 A for MCU, CAN transceivers, and gate drivers.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback operating up to 130 kHz; withstands 650 V DC link with 15 V/ns diode recovery dv/dt.

Use Value: 650 mJ E_AS rating eliminates need for external RCD snubber in QR flyback designs, reducing BOM count and improving power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB24N65M2	D²PAK package (R_thJC = 0.83 °C/W); 185 mΩ typ. R_DS(on); same die, higher thermal performance.	Better suited for SMT-based high-power designs requiring lower thermal resistance and automated assembly.	Select when PCB layout supports surface-mount heatsinking and volume production justifies D²PAK reflow process.
IPW65R090CFD7	Infineon CoolMOS™ CFD7; 90 mΩ R_DS(on), 43 nC Q_g, 650 V; higher conduction efficiency but slower switching.	Preferred in high-current, low-frequency (<65 kHz) PFC where conduction loss dominates over switching loss.	Choose when optimizing for peak efficiency at 50–60 Hz line frequency harmonics rather than light-load efficiency or compact size.

Compared with STB24N65M2, STP24N65M2 trades 3.6× higher R_thJC for through-hole mechanical robustness and simplified prototyping; versus IPW65R090CFD7, it offers 33% lower gate charge and 20% smaller C_oss, favoring high-frequency QR and LLC topologies.

Availability

STP24N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, server PSUs, and EV charger auxiliary supplies requiring stable component supply and long-lifecycle support.

Supply support for STP24N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP24N65M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current for STP24N65M2 at 100 °C case temperature?

The maximum continuous drain current is 10 A at TC = 100 °C, as specified in Table 1 of DS10381 Rev 3. This derating reflects thermal limitations of the TO-220FP package's 4.2 °C/W junction-to-case resistance under sustained high ambient conditions.

Does STP24N65M2 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic source-drain diode rated for 16 A continuous and 64 A pulsed current. Key recovery specs include 350 ns trr and 4.5 µC Qrr at TJ = 25 °C, rising to 496 ns and 6.5 µC at 150 °C-critical for evaluating commutation loss in DCM PFC.

Is STP24N65M2 suitable for use in ZVS or LLC resonant converters?

Yes-its low 47.5 pF Coss and 229 pF Coss_eq provide predictable soft-switching behavior, and its 50 V/ns MOSFET dv/dt ruggedness ensures reliability during zero-voltage turn-on transitions in LLC half-bridge primary switches.

What is the insulation withstand voltage rating between leads and heatsink for STP24N65M2?

The TO-220FP variant has a 2.5 kV RMS insulation withstand voltage rating from all three leads to external heatsink (t = 1 s, TC = 25 °C), enabling safe direct mounting without insulating pads in Class I safety-compliant designs.

STP24N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP24N65M2 FAQ

1.How can I place an order for STP24N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP24N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP24N65M2 reliable?

The price and inventory of STP24N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP24N65M2 is usually 5 days.

3.What payment methods are accepted for STP24N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP24N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP24N65M2?

STP24N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP24N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP24N65M2?

For technical support, including STP24N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP24N65M2 requirements.

6.How does Aetrix verify that STP24N65M2 is sourced from the original manufacturer or authorized distributors?

All STP24N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP24N65M2 meets industry standards.

7.What is the process for return or replacement of STP24N65M2?

All STP24N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP24N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP24N65M2 part is unused and in its original packaging.

Return procedure for STP24N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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