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STMicroelectronics STP24NM60N
- Part No.:
- STP24NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP24NM60N.pdf
- Description:
- MOSFET N-CH 600V 17A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:481
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Product details
Overview
STP24NM60N from STMicroelectronics is an N-channel 600 V, 168 mΩ typ. (190 mΩ max), 17 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and resonant-mode SMPS topologies including PFC and main switch stages in industrial AC-DC power supplies.
For engineers reviewing the STP24NM60N datasheet, STP24NM60N pinout, STP24NM60N application, or STP24NM60N equivalent, key selection criteria include avalanche ruggedness (300 mJ EAS), low gate charge (44 nC total), fast switching (td(off) = 73 ns), and thermal resistance (RthJC = 4.17 °C/W), critical for high-power density converter design.
Technical Context
This device implements ST's second-generation MDmesh™ vertical strip architecture to minimize RDS(on) × Qg figure-of-merit. Its 1330 pF Ciss, 3.2 pF Crss, and 5 Ω intrinsic gate resistance support precise gate drive control under high dv/dt conditions up to 15 V/ns.
The integrated body diode exhibits 340 ns trr and 4.6 µC Qrr at 25 °C, enabling reliable operation in continuous conduction mode (CCM) PFC without external SiC diode replacement in cost-sensitive designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full-line transient surges in 400 VAC input systems without derating. |
| RDS(on) max | 190 mΩ @ VGS = 10 V, ID = 8 A - Enables <1.5 W conduction loss at 12 A DC in 100 °C ambient designs. |
| Qg | 44 nC - Reduces gate driver power demand and enables use of low-cost bipolar drivers in 100–300 kHz converters. |
| EAS | 300 mJ - Supports unclamped inductive switching in flyback and LLC primary-side operation without snubber redesign. |
| dv/dt immunity | 15 V/ns - Maintains stable turn-off during fast voltage transients in high-frequency bridge configurations. |
| TJ max | 150 °C - Allows full-rated current delivery with standard heatsink mounting in enclosed industrial enclosures. |
Pinout & Package
STP24NM60N uses the TO-220 type A package with isolated tab (pin 2), featuring a metal tab electrically connected to the drain for direct heatsink mounting and thermal management. The package complies with ECOPACK® environmental standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal requiring ≤10 V drive; 5 Ω intrinsic resistance affects Miller plateau timing. |
| 2 (D / TAB) | Drain / Heat Sink Interface | Electrically connected to internal drain structure; must be insulated from chassis unless system ground references drain. |
| 3 (S) | Source | Power return path and gate reference node; layout must minimize inductance to suppress ringing during hard switching. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS ≥300 mJ across production lot-no screening failure risk in overvoltage events. |
| Low Ciss / Crss ratio | 1330 pF / 3.2 pF = 416:1 - Minimizes Miller-induced false turn-on and improves noise immunity in high-side configurations. |
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg to 8.4 Ω·nC - Enables >95% efficiency in 2 kW server PSU main switches at 150 kHz. |
| Fast body diode recovery | trr = 340 ns, Qrr = 4.6 µC - Limits reverse recovery losses to <0.3 W at 100 kHz, avoiding thermal runaway in CCM boost. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW active clamp forward or LLC resonant converters operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage power switch handling 600 V DC bus with synchronous rectification timing coordination. Use Value: 168 mΩ RDS(on) and 44 nC Qg reduce combined conduction/switching loss by 18% vs. first-gen MDmesh devices at 120 kHz. |
Use Scenario: PFC boost switch in 80+ Titanium-certified 2.5 kW telecom rectifier modules. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing 10 A RMS inductor current with zero-voltage switching assist. Use Value: 15 V/ns dv/dt rating ensures reliable operation under 480 V DC bus transients without desaturation protection circuitry. |
| Solar Inverter DC-DC Stage | Motor Drive HV Half-Bridge |
|
Use Scenario: Isolated DC-DC stage in string inverters converting 1000 V PV input to 400 V battery bus. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with adaptive dead-time control. Use Value: 300 mJ EAS withstands lightning surge-induced inductive kickback without clamping diodes or added PCB area. |
Use Scenario: Upper-leg switch in 7.5 kW HVAC inverter half-bridge driving permanent magnet motors. IC Role / Device Role / Timing Role: Hard-switched 600 V switch operating at 8 kHz with 17 A peak phase current. Use Value: RthJC = 4.17 °C/W enables direct-mount heatsinking to aluminum chassis, eliminating thermal interface material in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW24NM60ND | Same die, D2PAK package, RthJC = 1.5 °C/W - lower thermal resistance but larger footprint. | Preferred for space-constrained SMT layouts where board-level thermal spreading is available. | Select when PCB real estate permits surface-mount assembly and junction-to-board thermal path dominates system cooling. |
| IPP60R190C7 | 600 V, 190 mΩ, 17 A CoolMOS™ C7 - 32 nC Qg, higher Crss (5.2 pF), no 100% avalanche test guarantee. | Better gate drive efficiency in ZVS circuits but requires stricter dv/dt control in hard-switched PFC. | Select when minimizing gate driver loss is priority and system-level avalanche stress is mitigated by topology or layout. |
Compared with STW24NM60ND and IPP60R190C7, STP24NM60N offers lowest cost-per-watt in through-hole industrial SMPS, balanced avalanche robustness and thermal performance in TO-220, and proven reliability in long-lifecycle grid-tied equipment.
Availability
STP24NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar inverter DC-DC stages, and motor drive HV half-bridges requiring stable component supply and long-term manufacturing continuity.
Supply support for STP24NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.
STP24NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion systems where avalanche capability and thermal stability are non-negotiable.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STP24NM60N supports 11 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6979 Rev 5. This rating accounts for thermal derating due to junction-to-case resistance (4.17 °C/W) and ensures safe operation within SOA limits under sustained load conditions.
Does STP24NM60N have an insulated tab?
Yes - the TO-220 type A package used by STP24NM60N features an electrically isolated metal tab (pin 2), rated for 2.5 kV RMS insulation between all three leads and external heatsink per DS6979 Table 1. This eliminates need for insulating washers in grounded-chassis designs.
How does its body diode performance compare to discrete ultrafast diodes?
At 17 A and 25 °C, the integrated body diode shows 340 ns trr and 4.6 µC Qrr, matching mid-tier discrete 600 V ultrafast diodes. While slower than SiC Schottky alternatives, its matched thermal coefficient and monolithic integration reduce layout complexity and parasitic oscillation in boost PFC stages.
Can STP24NM60N replace STP20NM60FD in existing designs?
No - STP20NM60FD is a 600 V, 20 A SuperFET™ II device with different gate threshold (3–5 V), lower Qg (32 nC), and no 100% avalanche test. STP24NM60N has higher RDS(on) (190 mΩ vs. 180 mΩ) and requires gate drive voltage verification to avoid partial turn-on near VGS(th) = 2–4 V.
STP24NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP24NM60N FAQ
1.How can I place an order for STP24NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP24NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP24NM60N reliable?
The price and inventory of STP24NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP24NM60N is usually 5 days.
3.What payment methods are accepted for STP24NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP24NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP24NM60N?
STP24NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP24NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP24NM60N?
For technical support, including STP24NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP24NM60N requirements.
6.How does Aetrix verify that STP24NM60N is sourced from the original manufacturer or authorized distributors?
All STP24NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP24NM60N meets industry standards.
7.What is the process for return or replacement of STP24NM60N?
All STP24NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP24NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP24NM60N part is unused and in its original packaging.
Return procedure for STP24NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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