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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP24NM65N

Name: STP24NM65N
Brand: STMicroelectronics
SKU: STP24NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP24NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP24NM65N.pdf

Description:: MOSFET N-CH 650V 19A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP24NM65N from STMicroelectronics is an N-channel 650 V, 19 A, 0.16 Ω R_DS(on) Power MOSFET in TO-220 package, built on second-generation MDmesh™ technology. It delivers ultra-low gate charge (70 nC) and input capacitance (2500 pF), enabling high-efficiency hard-switching in offline SMPS, PFC stages, and industrial motor drives operating up to 150 °C junction temperature.

For engineers reviewing the STP24NM65N datasheet, STP24NM65N pinout, STP24NM65N application, or STP24NM65N equivalent, this device is selected for high-voltage, medium-current switching where low conduction loss, robust avalanche capability (500 mJ), and fast switching (t_d(off) = 80 ns) are critical in 650 V AC/DC and DC/DC converters.

Technical Context

This MOSFET employs ST's proprietary second-generation MDmesh™ vertical structure combined with strip layout, achieving one of the lowest R_DS(on) × Q_g figures among 650 V devices: 0.16 Ω at V_GS = 10 V and 70 nC total gate charge. Its 15 V/ns dv/dt ruggedness and 100% avalanche-tested design support reliable operation under inductive turn-off stress.

The device features a fast, soft-recovery body diode (t_rr = 460 ns, Q_rr = 7 µC at T_J = 25 °C) and low reverse transfer capacitance (C_rss = 10 pF), minimizing Miller-induced shoot-through risk in bridge configurations. Thermal resistance R_thj-case is 0.78 °C/W, enabling 160 W dissipation at T_C = 25 °C in TO-220 mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Rated blocking voltage for universal mains-input (85–265 VAC) and 400 VDC bus applications
R_DS(on) max	0.19 Ω - Confirmed at V_GS = 10 V, I_D = 9.5 A; ensures ≤ 34 W conduction loss at 19 A continuous
Q_g	70 nC - Total gate charge enabling efficient gate drive with <1 W driver power at 100 kHz
E_AS	500 mJ - Single-pulse avalanche energy rating supports unclamped inductive switching without external snubbers
t_r/t_f	10 ns / 20 ns - Fast switching transitions reduce switching losses in high-frequency PFC and LLC resonant converters
dv/dt ruggedness	15 V/ns - Guaranteed immunity to false turn-on during high-speed voltage transients in half-bridge topologies
T_J max	150 °C - Enables operation in sealed enclosures or high-ambient industrial environments without derating

Pinout & Package

STP24NM65N is housed in a through-hole TO-220 package with standard three-terminal configuration: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology requires common-Drain mounting.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying terminal, high-side switch node	Electrically tied to internal drain region; requires insulating washer when mounted to grounded heatsink
Pin 1	Source	Reference node for gate drive; carries full load current and must be routed with low-inductance path to minimize ringing
Pin 2	Gate	Control input requiring 10 V threshold; sensitive to ESD and noise-requires local 100 nF bypass and series gate resistor (4.7 Ω typical)

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Combines vertical charge compensation with strip layout to achieve industry-leading R_DS(on) × Q_g product for 650 V class
100% avalanche tested	Each unit validated for single-pulse E_AS = 500 mJ, eliminating need for external clamping in flyback or forward converters
Low C_iss and C_rss	2500 pF input capacitance and only 10 pF reverse transfer capacitance reduce gate drive loss and improve noise immunity
Soft-recovery body diode	t_rr = 460 ns with low Q_rr (7 µC) minimizes voltage overshoot and EMI in synchronous rectification and freewheeling paths
ECOPACK® RoHS-compliant	Lead-free second-level interconnect meets JEDEC JESD97; compatible with standard SnPb and lead-free reflow profiles

Applications

Industrial Switched-Mode Power Supply

Server & Telecom Rectification

Use Scenario: Primary-side switch in 500–1000 W open-frame AC/DC power supplies for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage switching element in quasi-resonant flyback and LLC half-bridge topologies operating at 65–150 kHz.

Use Value: 0.16 Ω R_DS(on) reduces conduction loss by 22% vs. legacy 650 V MOSFETs, improving full-load efficiency to >92%.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch handling 19 A RMS current with repetitive 650 V blocking duty cycle.

Use Value: 70 nC Q_g enables clean gate drive with low-cost 1 A drivers, reducing BOM cost versus SiC alternatives.

Motor Drive Inverter Stage

High-Voltage DC/DC Converter

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 3 kW induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched N-channel device in 650 V DC bus topology with 150 °C ambient thermal constraint.

Use Value: 0.78 °C/W R_thj-case allows direct mounting to aluminum heatsink, eliminating need for thermal interface material in space-constrained designs.

Use Scenario: Primary switch in isolated 1 kV output DC/DC converter for battery management systems and EV charging infrastructure.

IC Role / Device Role / Timing Role: 650 V-rated switch operating in asymmetric half-bridge with 100% duty-cycle capability during fault conditions.

Use Value: 500 mJ E_AS rating ensures safe operation during output short-circuit events without desaturation protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24NM65N	Same die, TO-247 package with lower R_thj-case (3.1 °C/W) and higher P_TOT (40 W)	Better thermal performance in forced-air-cooled systems; larger footprint limits PCB density	Select when thermal margin is constrained and board space permits TO-247 mounting
FDPF19N65	650 V, 19 A, R_DS(on) = 0.20 Ω, Q_g = 85 nC, TO-220FP package	Slightly higher conduction and switching loss; optimized for lower-cost consumer-grade designs	Choose for cost-sensitive applications where 5% efficiency penalty is acceptable and TO-220FP mechanical fit is required

Compared with STW24NM65N and FDPF19N65, STP24NM65N offers optimal balance of TO-220 footprint, 0.16 Ω R_DS(on), and 70 nC Q_g-making it ideal for space-constrained industrial SMPS where thermal performance exceeds TO-220FP but TO-247 is impractical.

Availability

STP24NM65N is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, server rectification, motor drive inverters, and high-voltage DC/DC converters requiring stable component supply across multi-year production cycles.

Supply support for STP24NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion-emphasizing low R_DS(on) × Q_g, avalanche robustness, and thermal reliability.

FAQ

Is STP24NM65N suitable for use in zero-voltage switching (ZVS) topologies?

Yes. With its low C_oss (120 pF) and C_oss,eq (310 pF), STP24NM65N enables efficient ZVS operation in LLC resonant converters up to 300 kHz. The 10 pF C_rss ensures minimal capacitive coupling during dead-time, supporting clean turn-on under resonant conditions without excessive circulating current.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

A 4.7 Ω gate resistor is specified in the datasheet for switching tests at 100 kHz with RG = 4.7 Ω. Using ≥10 Ω increases t_d(on)/t_d(off) beyond 35 ns and risks excessive switching loss; values below 2.2 Ω may cause gate oscillation due to PCB inductance and require ferrite bead suppression.

Does STP24NM65N require a negative gate turn-off voltage?

No. The device has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at +10 V. Negative turn-off (e.g., –5 V) is not required for stability, though it improves noise immunity in high-dv/dt environments. Standard 0 V to +12 V gate drive suffices for most industrial applications.

Can STP24NM65N replace STP20NM60 in existing designs?

Yes, with qualification. STP24NM65N offers higher V_DSS (650 V vs. 600 V), lower R_DS(on) (0.16 Ω vs. 0.22 Ω), and improved Q_g (70 nC vs. 85 nC). Layout compatibility is confirmed: both use TO-220, same pinout, and identical mounting hole pattern. Thermal validation is recommended due to higher power density.

STP24NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP24NM65N FAQ

1.How can I place an order for STP24NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP24NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP24NM65N reliable?

The price and inventory of STP24NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP24NM65N is usually 5 days.

3.What payment methods are accepted for STP24NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP24NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP24NM65N?

STP24NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP24NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP24NM65N?

For technical support, including STP24NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP24NM65N requirements.

6.How does Aetrix verify that STP24NM65N is sourced from the original manufacturer or authorized distributors?

All STP24NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP24NM65N meets industry standards.

7.What is the process for return or replacement of STP24NM65N?

All STP24NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STP24NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP24NM65N part is unused and in its original packaging.

Return procedure for STP24NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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