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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP25N10F7

Name: STP25N10F7
Brand: STMicroelectronics
SKU: STP25N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP25N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP25N10F7.pdf

Description:: MOSFET N-CH 100V 25A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP25N10F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, designed for high-efficiency switching applications requiring 100 V drain-source voltage, 25 A continuous drain current at T_C = 25 °C, 0.035 Ω max R_DS(on) at V_GS = 10 V, and 50 W total power dissipation. It employs STripFET™ VII DeepGATE™ technology to achieve ultra-low on-resistance and is 100% avalanche tested for ruggedness.

For engineers reviewing the STP25N10F7 datasheet, STP25N10F7 pinout, STP25N10F7 application, or STP25N10F7 equivalent, key selection criteria include thermal resistance (R_thj-case = 3 °C/W), gate charge (Q_g = 14 nC), safe operating area (SOA) limits up to 100 A pulsed, reverse recovery performance (t_rr = 38 ns), and TO-220 mechanical compatibility with standard heatsinks.

Technical Context

This MOSFET uses a 7th-generation STripFET™ process with DeepGATE™ gate structure to minimize R_DS(on) while maintaining robust avalanche capability and fast switching. Its SOA is defined up to 10 ms single-pulse operation at T_C = 25 °C, with current limiting governed by R_DS(on) at high V_DS.

Dynamic behavior is characterized by low C_iss (920 pF), C_oss (215 pF), and Cr_ss (19 pF) at V_DS = 50 V, enabling efficient hard-switching in DC-DC converters and motor drives. The source-drain diode exhibits t_rr = 38 ns and Q_rr = 29 nC under specified conditions (I_SD = 25 A, di/dt = 100 A/μs, T_j = 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; supports 48 V and 60 V bus systems with margin.
R_DS(on) max	0.035 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 25 A, critical for thermal management in high-current switches.
I_D cont	25 A @ T_C = 25 °C - Continuous current rating achievable with adequate heatsinking; derates to 18 A at T_C = 100 °C.
P_TOT	50 W @ T_C = 25 °C - Total power dissipation limit; corresponds to R_thj-case = 3 °C/W and ΔT = 150 °C junction-to-case rise.
Q_g	14 nC - Total gate charge determines drive strength requirement; enables ~10 ns turn-on delay with 4.7 Ω gate resistor.
t_rr	38 ns - Reverse recovery time of integrated body diode; reduces switching losses and EMI in synchronous rectification.
V_ISO	2500 V RMS - Insulation withstand voltage from leads to heatsink; ensures safety compliance in isolated power stages.

Pinout & Package

STP25N10F7 is housed in a through-hole TO-220 package with three leads and an electrically connected metal tab (drain). The package features standardized mounting hole spacing (3.75 mm pitch), 3.85 mm diameter mounting screw hole, and 15.25–15.75 mm D dimension per JEDEC TO-220 Type A specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; threshold voltage 2.5–4.5 V enables TTL/CMOS drive compatibility.
2 (Drain)	High-side switch node	Connected to internal die backside and external metal tab; must be electrically isolated from heatsink unless referenced to same potential.
3 (Source)	Return path / reference node	Serves as common return for load current and gate drive reference; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.027 Ω typ. @ V_GS = 10 V - Reduces I²R losses by >30% vs. prior-generation 100 V MOSFETs in same package.
100% avalanche rated	Unclamped inductive switching validated per JEDEC JESD24-1 - Ensures reliability in flyback, boost, and motor phase-leg fault conditions.
STripFET™ VII DeepGATE™	Optimized gate trench geometry - Improves charge balance and reduces gate-drain capacitance (Cr_ss = 19 pF) for faster switching.
Low Q_gd/Q_g ratio	3/14 nC = 0.21 - Minimizes Miller effect, enabling stable operation with moderate gate resistance without oscillation risk.
Enhanced SOA	100 A pulsed current capability - Supports peak loads in UPS, e-fuse, and soft-start circuits without secondary protection.

Applications

DC-DC Converter Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 48 V input buck converter delivering 20 A to FPGA core rail.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer into output inductor; operates at 200–500 kHz.

Use Value: Low R_DS(on) (0.035 Ω) limits conduction loss to ≤17.5 W at full load, while fast t_rr (38 ns) minimizes dead-time losses in synchronous topology.

Use Scenario: 24–48 V BLDC motor driver for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutated at 10–20 kHz with PWM modulation.

Use Value: 100% avalanche rating protects against inductive kickback during abrupt current interruption; TO-220 package allows direct bolt-down heatsinking for 25 A continuous operation.

UPS Inverter Output Stage

Programmable Load Switch

Use Scenario: 1 kVA online UPS converting 360 V DC bus to 230 V AC via full-bridge inverter.

IC Role / Device Role / Timing Role: One quadrant switch in H-bridge leg; subjected to repetitive unclamped inductive stress during grid sync transitions.

Use Value: Validated 2500 V isolation withstand and 100 A pulsed SOA ensure long-term reliability under worst-case line faults and zero-crossing switching events.

Use Scenario: Hot-swap controller for 12 V/20 A server board power domain with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Main pass element controlled by external current-sense amplifier and comparator; duty-cycled during fault limiting.

Use Value: Low gate charge (14 nC) enables fast turn-off (<1 μs) during overcurrent events; R_DS(on) tolerance ensures predictable trip point across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPbF	R_DS(on) = 0.044 Ω max @ V_GS = 10 V; Q_g = 71 nC; no avalanche rating specified	Higher conduction loss (+26%) and slower switching due to 5× higher Q_g; not qualified for repetitive avalanche stress	Acceptable only in non-critical, low-frequency linear or switching applications where ruggedness is not required.
IXTP25N10P	R_DS(on) = 0.032 Ω max; Q_g = 22 nC; avalanche rated to 100% of rated ID	Lower R_DS(on) but higher gate charge increases drive loss; TO-220 package identical, pinout compatible	Preferred when lowest possible conduction loss is prioritized and gate drive capability supports higher Q_g.

Compared with IRF540NPbF and IXTP25N10P, STP25N10F7 delivers optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness-making it superior for industrial switching where reliability under transient overload is mandatory.

Availability

STP25N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, and programmable DC load switches requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STP25N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

STP25N10F7 belongs to the STripFET™ VII DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and consumer power conversion systems.

FAQ

Is STP25N10F7 suitable for 12 V automotive applications?

No. STP25N10F7 is not qualified for automotive use per ST's official documentation. It lacks AEC-Q101 qualification, has no specified operation down to –40 °C ambient (only –55 °C storage), and is explicitly excluded from automotive, safety-critical, and aerospace applications in its datasheet disclaimer.

What is the maximum gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per Table 2. Operation beyond ±20 V risks permanent gate oxide damage. For robust design, gate drive should be limited to +12 V to +15 V with clamping, and negative bias (e.g., –5 V) is recommended during turn-off to prevent spurious turn-on in high-dV/dt environments.

Can STP25N10F7 replace STP20N10F7 in existing designs?

Yes, with verification. STP25N10F7 offers lower R_DS(on) (0.035 Ω vs. 0.042 Ω) and higher I_D (25 A vs. 20 A), but identical TO-220 package, pinout, and gate threshold. Thermal design must confirm heatsink adequacy for increased power density, and gate drive must handle slightly higher Q_g (14 nC vs. 12 nC).

Does the TO-220 tab require electrical isolation from the heatsink?

Yes. The metal tab is internally connected to the drain terminal. Unless the heatsink is at the same potential as the drain node (e.g., floating or high-side configuration), an insulating washer and shoulder washer must be used to maintain creepage/clearance and prevent short circuits. V_ISO = 2500 V RMS applies only with proper isolation.

STP25N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 920 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP25N10F7 FAQ

1.How can I place an order for STP25N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP25N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP25N10F7 reliable?

The price and inventory of STP25N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP25N10F7 is usually 5 days.

3.What payment methods are accepted for STP25N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP25N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP25N10F7?

STP25N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP25N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP25N10F7?

For technical support, including STP25N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP25N10F7 requirements.

6.How does Aetrix verify that STP25N10F7 is sourced from the original manufacturer or authorized distributors?

All STP25N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP25N10F7 meets industry standards.

7.What is the process for return or replacement of STP25N10F7?

All STP25N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STP25N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP25N10F7 part is unused and in its original packaging.

Return procedure for STP25N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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