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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP25N60M2-EP

Name: STP25N60M2-EP
Brand: STMicroelectronics
SKU: STP25N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP25N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP25N60M2-EP.pdf

Description:: MOSFET N-CH 600V 18A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,006

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Product details

Overview

STP25N60M2-EP from STMicroelectronics is an N-channel 600 V, 18 A Power MOSFET in TO-220 package, featuring 0.175 Ω typ. R_DS(on), 29 nC total gate charge, and 56 pF C_OSS. It is engineered for very high-frequency switching converters (>150 kHz), delivering low turn-off energy (7–8 µJ) and Zener-protected gate integrity in industrial SMPS and PFC stages.

For engineers reviewing the STP25N60M2-EP datasheet, STP25N60M2-EP pinout, STP25N60M2-EP application, or STP25N60M2-EP equivalent, key selection criteria include avalanche ruggedness (200 mJ E_AS), dv/dt immunity (50 V/ns), thermal resistance (0.83 °C/W j-case), and optimized COSS profile for resonant topologies.

Technical Context

This MDmesh™ M2 EP device uses a strip layout and enhanced vertical structure to achieve low conduction loss while maintaining fast, controlled switching. Its 255 pF equivalent output capacitance (C_OSS,eq) and 1.6 pF Crss enable predictable soft-switching behavior in LLC and ZVS circuits.

The MOSFET integrates a robust body diode with 360 ns trr (Tj = 25 °C) and 1.6 V forward voltage at 18 A, supporting synchronous rectification and bidirectional power flow in bridge configurations without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V DC bus designs with 50% voltage margin for transient spikes
R_DS(on) max	0.188 Ω - limits conduction loss to ≤34 W at 18 A continuous (TC = 25 °C)
Q_g	29 nC - enables efficient gate drive with <1 W driver power at 200 kHz switching
E_off	7–8 µJ - reduces turn-off losses by >40% vs legacy 600 V MOSFETs in hard-switched PFC
C_OSS,eq	255 pF - provides stable timing in resonant converters across 0–480 V V_DS range
T_j max	150 °C - allows operation in sealed industrial enclosures without forced air cooling
R_thj-case	0.83 °C/W - supports 150 W dissipation with standard TO-220 heatsink (ΔT = 125 °C)

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), 3-pin through-hole mounting. Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 7 Ω intrinsic gate resistance ensures stable Miller clamping
Pin 2 (Drain / Tab)	High-side power node	Electrically connected to metal tab; requires insulated mounting in floating applications
Pin 3 (Source)	Reference return path	Serves as common reference for gate drive and current sensing; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
MDmesh™ M2 EP technology	Combines strip-cell layout and optimized drift region for simultaneous R_DS(on) × Q_g reduction
Zener-protected gate	±25 V gate-source rating with integrated protection prevents ESD-induced failure during assembly
100% avalanche tested	Guarantees single-pulse E_AS ≥ 200 mJ at T_j = 25 °C for unclamped inductive switching reliability
Low C_oss profile	56 pF measured at 100 V with linearized C_oss,eq = 255 pF up to 480 V for accurate snubber design
High dv/dt ruggedness	50 V/ns rated MOSFET dv/dt immunity ensures noise-free commutation in high-di/dt motor drives

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW active clamp forward converter operating at 250 kHz with 400 V input.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full load current with zero-voltage switching assist.

Use Value: 29 nC Q_g and 7 µJ E_off reduce gate driver loss and improve efficiency by 0.8% over STP20NM60FD.

Use Scenario: 12 V/200 A secondary-side synchronous rectifier in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck with body diode reverse recovery management.

Use Value: 360 ns trr and 5 µC Q_rr minimize cross-conduction loss and EMI during phase transition.

Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC link switching stage in string inverters with 1000 V PV array input and 50 kHz PWM.

IC Role / Device Role / Timing Role: High-voltage half-bridge leg switch sustaining repetitive 600 V blocking and 18 A conduction.

Use Value: 0.175 Ω R_DS(on) and 0.83 °C/W R_thj-case maintain T_j < 115 °C at full load without heatsink derating.

Use Scenario: Resonant tank switch in 15 kW induction cooker operating at 20–80 kHz variable frequency.

IC Role / Device Role / Timing Role: Hard-switched inverter switch managing high di/dt (≥300 A/µs) and repetitive avalanche stress.

Use Value: 50 V/ns dv/dt rating and 200 mJ E_AS prevent false triggering and junction runaway during load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	Higher R_DS(on) (0.22 Ω), higher Q_g (42 nC), no Zener gate protection	Limited to ≤100 kHz due to slower switching and lower dv/dt immunity (30 V/ns)	Select when cost sensitivity outweighs efficiency targets and board space permits larger heatsink
IPP60R190C6	Lower R_DS(on) (0.19 Ω), higher C_oss (110 pF), no avalanche rating published	Requires careful snubber tuning in ZVS designs; not qualified for repetitive avalanche stress	Prefer for fixed-frequency DCM flyback where conduction loss dominates, but avoid in PFC or resonant LLC

Compared with STP20NM60FD and IPP60R190C6, the STP25N60M2-EP uniquely balances low Q_g, low C_oss,eq, and guaranteed avalanche performance-making it the only choice for compact, high-efficiency >150 kHz converters requiring field reliability under transient overload.

Availability

STP25N60M2-EP is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic inverters, server rectifiers, and induction heating systems requiring stable component supply and long-term manufacturability.

Supply support for STP25N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 EP high-voltage power MOSFET product line, developed specifically for ultra-high-frequency switching power conversion where low gate charge and controlled output capacitance are critical to system efficiency and EMI compliance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP25N60M2-EP supports 11.3 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to reduced R_DS(on) temperature coefficient and safe operating area constraints at elevated temperatures.

Is the TO-220 tab electrically isolated from the leads?

No-the TO-220 type A package has the drain terminal connected directly to the metal tab. Pin 2 (Drain) and the tab are internally shorted; electrical isolation requires use of insulating shoulder washers and isolated mounting hardware in PCB layout.

Does this MOSFET require a negative gate turn-off voltage?

No-this device operates with 0 V to +10 V gate drive. The gate threshold voltage is 2–4 V, and the absolute maximum V_GS is ±25 V. Negative turn-off bias is unnecessary and not recommended, as the Zener protection is optimized for positive overvoltage events only.

Can STP25N60M2-EP replace STP25NM60N in existing designs?

Yes-with verification of gate drive strength and layout parasitics. The STP25N60M2-EP offers lower Q_g (29 nC vs. 45 nC) and improved dv/dt ruggedness (50 V/ns vs. 35 V/ns), but identical pinout and voltage/current ratings. Layout changes may be needed to exploit faster switching without increasing EMI.

STP25N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 188mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1090 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP25N60M2-EP FAQ

1.How can I place an order for STP25N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP25N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP25N60M2-EP reliable?

The price and inventory of STP25N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP25N60M2-EP is usually 5 days.

3.What payment methods are accepted for STP25N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP25N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP25N60M2-EP?

STP25N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP25N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP25N60M2-EP?

For technical support, including STP25N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP25N60M2-EP requirements.

6.How does Aetrix verify that STP25N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STP25N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP25N60M2-EP meets industry standards.

7.What is the process for return or replacement of STP25N60M2-EP?

All STP25N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STP25N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP25N60M2-EP part is unused and in its original packaging.

Return procedure for STP25N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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