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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP25N80K5

Name: STP25N80K5
Brand: STMicroelectronics
SKU: STP25N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP25N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP25N80K5.pdf

Description:: MOSFET N-CH 800V 19.5A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,000

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Product details

Overview

STP25N80K5 from STMicroelectronics is an N-channel 800 V, 19.5 A high-voltage power MOSFET using MDmesh K5 technology, with R_DS(on) = 190 mΩ (typ.), Q_g = 40 nC, and 100% avalanche tested. It operates in TO-220 package for industrial AC-DC SMPS, PFC stages, and offline switch-mode power supplies.

For engineers reviewing the STP25N80K5 datasheet, STP25N80K5 pinout, STP25N80K5 application, or STP25N80K5 equivalent, key selection criteria include breakdown voltage margin, gate charge vs. switching loss trade-off, thermal resistance (R_thJC = 0.5 °C/W), Zener-protected gate, and unclamped inductive switching capability.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical superjunction structure to achieve ultra-low R_DS(on) × Q_g figure of merit (FoM), enabling high-efficiency operation at 640 V bus voltages. Its 800 V V_(BR)DSS supports 400 VAC mains with >2× safety margin, and Zener-protected gate ensures robustness against transient overvoltage.

The integrated body diode features t_rr = 515 ns (T_J = 25 °C) and Q_rr = 11 µC, optimized for hard-switched PFC and resonant topologies. Avalanche ruggedness is validated via single-pulse E_AS = 200 mJ and I_AR = 6.5 A testing per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Withstands 400 VAC rectified peak + derating margin in offline converters
R_DS(on) max	260 mΩ - Limits conduction loss to ≤10 W at 19.5 A DC, critical for thermal design
Q_g	40 nC - Enables <100 ns turn-on/turn-off with 10 Ω gate resistor at 10 V drive
I_D (T_C = 25 °C)	19.5 A - Maximum continuous drain current with heatsink; derates to 12.3 A at 100 °C case
E_AS	200 mJ - Supports reliable unclamped inductive switching in flyback or LLC primary switches
R_thJC	0.5 °C/W - Enables junction-to-case temperature rise of only 5 °C at 10 W dissipation
t_rr	515 ns - Minimizes diode reverse recovery loss and EMI in hard-switched PFC circuits

Pinout & Package

STP25N80K5 is housed in a TO-220 package with isolated tab (pin 2), standard three-terminal layout, and through-hole mounting. The metal tab is electrically connected to the drain terminal and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	Controls channel conduction; requires 10 V drive for full enhancement; Zener-clamped to ±30 V
2 (Center, Tab)	Drain (D)	Main high-side power terminal; electrically tied to metal tab; must be insulated from heatsink unless referenced to same potential
3 (Right)	Source (S)	Power return path and gate reference; low-inductance connection critical for switching stability

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 40 nC enables fast switching with minimal driver loss and reduced gate drive power
Zener-protected gate	Integrated ±30 V gate-source clamp prevents oxide damage during transients or layout-induced ringing
100% avalanche tested	Every unit validated for single-pulse E_AS = 200 mJ, ensuring reliability in inductive fault conditions
MDmesh K5 superjunction	Vertical structure reduces R_DS(on) by ~35% vs. prior K3 generation at same voltage rating
Low C_oss & C_rss	C_oss = 130 pF and C_rss = 2 pF minimize Miller effect and improve hard-switching efficiency

Applications

Industrial AC-DC Power Supplies

Active PFC Front-Ends

Use Scenario: Primary-side switch in 300–500 W offline flyback or forward converters operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 65–130 kHz with hard switching.

Use Value: 800 V rating provides 2.2× margin over 375 VDC bus, while 260 mΩ R_DS(on) limits conduction loss to <8 W at full load.

Use Scenario: Switching element in boost-type active PFC stage for server PSUs and industrial HMIs.

IC Role / Device Role / Timing Role: Fast-turning main switch synchronized to line frequency; handles 10–30 A peak currents.

Use Value: Low Q_g (40 nC) and t_rr (515 ns) reduce switching loss and diode recovery stress, improving PF correction efficiency to >98%.

UPS Inverter Stages

High-Voltage DC-DC Converters

Use Scenario: Half-bridge switch in online UPS inverters delivering 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: High-side/low-side switching device in 16–20 kHz PWM inverter leg; subjected to shoot-through and bus transients.

Use Value: 100% avalanche-tested ruggedness and Zener gate protection ensure survival during output short-circuit or control faults.

Use Scenario: Primary switch in isolated 48 V–800 V DC-DC converters for EV charging infrastructure and battery management systems.

IC Role / Device Role / Timing Role: Main power switch handling 640 V DC bus; operates in phase-shifted full-bridge or LLC topology.

Use Value: R_thJC = 0.5 °C/W allows direct mounting to cold plate, maintaining T_J < 125 °C at 15 A continuous with forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW25N80K5	Same die, TO-247 package; R_thJC = 0.5 °C/W identical, but higher creepage/clearance and 2.5 kV isolation rating	Required where reinforced insulation or >100 W continuous dissipation is needed	Select when board space permits larger footprint and enhanced safety compliance is mandatory
FDPF19N80F	800 V, 19 A, R_DS(on) = 280 mΩ, Q_g = 48 nC; no integrated Zener gate protection	Lacks gate Zener clamp; requires external protection circuitry in noisy environments	Choose only if cost sensitivity outweighs gate robustness requirements and layout controls ESD/transient coupling

Compared with STW25N80K5, STP25N80K5 offers identical electrical performance in a lower-cost, compact TO-220 package but lacks reinforced isolation; versus FDPF19N80F, it delivers lower conduction loss, faster switching, and built-in gate protection-critical for industrial field reliability.

Availability

STP25N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, active PFC front-ends, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for STP25N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STP25N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum safe operating voltage for STP25N80K5 in continuous conduction?

The absolute maximum drain-source voltage (V_(BR)DSS) is 800 V, specified at V_GS = 0 V and I_D = 1 mA. For reliable long-term operation, ST recommends limiting V_DS to ≤640 V under switching conditions to maintain sufficient margin against voltage spikes and ensure SOA compliance per Figure 3.

Does STP25N80K5 require external gate protection?

No. STP25N80K5 integrates a bidirectional Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external TVS or resistor-Zener networks in most industrial layouts, though proper PCB layout (short gate traces, local decoupling) remains essential to avoid oscillation.

How does the TO-220 package affect thermal performance compared to TO-247?

Both STP25N80K5 (TO-220) and STW25N80K5 (TO-247) share identical R_thJC = 0.5 °C/W, but TO-220 has higher R_thJA (62.5 °C/W on FR-4) due to smaller copper area. For >15 W dissipation, TO-220 requires a dedicated heatsink, whereas TO-247 achieves better ambient-limited performance without added hardware.

Can STP25N80K5 replace STP20NM60FD in existing 600 V designs?

Yes-with design review. STP25N80K5 offers higher 800 V rating and lower R_DS(on) (260 mΩ vs. 350 mΩ), improving voltage margin and conduction loss. However, its higher Q_g (40 nC vs. 32 nC) may increase gate drive loss; verify driver capability and adjust gate resistor values to maintain desired dV/dt and EMI profile.

STP25N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 19.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP25N80K5 FAQ

1.How can I place an order for STP25N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP25N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP25N80K5 reliable?

The price and inventory of STP25N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP25N80K5 is usually 5 days.

3.What payment methods are accepted for STP25N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP25N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP25N80K5?

STP25N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP25N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP25N80K5?

For technical support, including STP25N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP25N80K5 requirements.

6.How does Aetrix verify that STP25N80K5 is sourced from the original manufacturer or authorized distributors?

All STP25N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP25N80K5 meets industry standards.

7.What is the process for return or replacement of STP25N80K5?

All STP25N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP25N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP25N80K5 part is unused and in its original packaging.

Return procedure for STP25N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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