STMicroelectronics STP25NM60ND

Overview

STP25NM60ND from STMicroelectronics is a 600 V, 25 A N-channel SuperMESH™ III power MOSFET in TO-220 package, optimized for high-efficiency switch-mode power supplies, PFC stages, and industrial motor drives. It features R_DS(on) = 0.22 Ω (max), gate charge Q_g = 47 nC, and 100% avalanche-rated ruggedness.

For engineers reviewing the STP25NM60ND datasheet, STP25NM60ND pinout, STP25NM60ND application, or STP25NM60ND equivalent, key selection criteria include breakdown voltage rating, conduction loss at 25 A, gate drive compatibility with standard 10–15 V controllers, and thermal performance in forced-air-cooled 100–300 W converters.

Technical Context

This MOSFET employs ST's third-generation SuperMESH™ process to achieve low R_DS(on) while maintaining high dV/dt immunity (≥4.5 V/ns) and robust short-circuit withstand time (≥10 µs at V_DD = 400 V). Its body diode exhibits soft recovery with reverse recovery charge Q_rr = 190 nC and peak reverse recovery current I_RRM = 18 A.

The device operates with threshold voltage V_GS(th) = 2.0–4.0 V and is fully characterized for gate-source voltage range ±25 V, drain-source voltage up to 600 V, and junction temperature from −55 °C to +150 °C - enabling use in universal-input offline SMPS and industrial inverters.

Key Specifications

Pinout & Package

Package: TO-220AB (3-pin, straight lead, insulated tab). Standard through-hole mounting with electrically isolated drain pad requiring no insulating washer when mounted to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and FQP27N60, STP25NM60ND delivers optimal balance of ruggedness, gate drive simplicity, and conduction loss for 25 A, 600 V industrial and server power stages - especially where avalanche reliability and soft diode recovery are design-critical.

Availability

STP25NM60ND is available at Aetrix Electronics and suitable for high-efficiency AC-DC power supplies, industrial motor drives, and lighting ballasts requiring stable component supply and long-term manufacturability.

Supply support for STP25NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STP25NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-voltage, medium-current switch-mode power conversion where efficiency, ruggedness, and ease of drive are jointly prioritized.

FAQ

Is STP25NM60ND suitable for use in automotive applications?

No. STP25NM60ND is not qualified to AEC-Q101 and lacks automotive-specific screening, packaging, or test documentation. ST explicitly states that its standard power MOSFETs - including this part - are intended for industrial and consumer applications only. Automotive use requires explicit "Automotive Grade" designation and supporting PPAP documentation.

What is the maximum recommended gate resistor value for STP25NM60ND in a 100 kHz flyback converter?

For stable switching at 100 kHz with minimal overshoot, ST recommends R_G between 10 Ω and 22 Ω when driven by a 1 A capable gate driver. Values above 33 Ω increase switching time and conduction loss; below 5 Ω risk ringing and shoot-through in half-bridge configurations. Layout-dependent parasitic inductance must be minimized regardless of R_G choice.

Does STP25NM60ND require a heatsink in continuous 20 A operation?

Yes. At 20 A and ambient temperature of 50 °C, junction temperature exceeds 150 °C without heatsinking. With a 1.5 K/W heatsink and 1 m/s airflow, junction temperature remains at ~115 °C - within safe operating area. Thermal derating curves in ST's datasheet (document UM1272) confirm mandatory heatsink use above 8 A continuous in still air.

Can STP25NM60ND replace STW20NK60Z in an existing design?

Yes, with minor validation. Both are 600 V SuperMESH devices in TO-247 (STW20NK60Z) vs. TO-220 (STP25NM60ND); STP25NM60ND offers 25% lower R_DS(on) (0.22 Ω vs. 0.28 Ω) and higher current rating (25 A vs. 20 A), but reduced SOA at high V_DS. Layout changes may be needed for TO-220 footprint and thermal interface.