STMicroelectronics STP260N6F6

Overview

STP260N6F6 from STMicroelectronics is an N-channel 60 V, 120 A Power MOSFET in TO-220 package, featuring 2.4 mΩ typical R_DS(on), 183 nC total gate charge, and 300 W power dissipation at T_C = 25 °C. It is engineered for high-current switching in industrial motor drives, DC-DC converters, and battery protection circuits where low conduction loss and avalanche ruggedness are critical.

For engineers reviewing the STP260N6F6 datasheet, STP260N6F6 pinout, STP260N6F6 application, or STP260N6F6 equivalent, key selection criteria include verified R_DS(on) ≤ 3 mΩ at V_GS = 10 V, pulsed drain current capability of 480 A, thermal resistance junction-to-case of 0.5 °C/W, and compatibility with standard TO-220 heatsink mounting.

Technical Context

This device implements ST's 6th-generation STripFET™ VI DeepGATE™ technology with a redesigned gate structure to minimize gate charge and on-resistance. Its optimized cell layout delivers industry-leading R_DS(on) × Q_g figure-of-merit for hard-switching topologies.

The MOSFET supports unclamped inductive switching with guaranteed avalanche energy rating, exhibits 55.6 ns reverse recovery time (t_rr) under 100 A/µs di/dt, and maintains stable V_GS(th) (2–4 V) across –55 °C to 175 °C operating junction temperature range.

Key Specifications

Pinout & Package

STP260N6F6 uses a standard TO-220 package with three terminals: Gate (pin 1), Drain (pin 2 and metal tab), Source (pin 3). The metal tab is electrically connected to the Drain and must be isolated from chassis unless circuit topology requires common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP260N and IXTH120N60L2, STP260N6F6 delivers the lowest R_DS(on) in its voltage class, enabling higher efficiency in 48 V systems while maintaining TO-220 mountability and proven avalanche reliability-critical for industrial switching where thermal and transient margins are constrained.

Availability

STP260N6F6 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and battery protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP260N6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capabilities.

STP260N6F6 belongs to the STripFET™ VI DeepGATE™ Power MOSFET product line, designed specifically for high-efficiency, high-current switching in industrial and computing power supplies where low R_DS(on) and ruggedness are mandatory.

FAQ

Is STP260N6F6 suitable for synchronous rectification in 48 V to 12 V DC-DC converters?

Yes. With 2.4 mΩ R_DS(on), 55.6 ns reverse recovery time, and 1.1 V source-drain forward voltage, STP260N6F6 reduces conduction and switching losses in secondary-side synchronous rectification. Its low Q_g/R_DS(on) ratio supports efficient operation up to 500 kHz when paired with appropriate gate drivers.

What is the maximum allowable case temperature for continuous 120 A operation?

The datasheet specifies 120 A continuous drain current at T_C = 25 °C and T_C = 100 °C. At T_C = 100 °C, the device remains within safe SOA limits due to its 0.5 °C/W R_thj-case and 175 °C max junction temperature. Derating is not required up to 100 °C case temperature for rated current.

Does STP260N6F6 require a gate resistor for stability in hard-switching applications?

Yes. A gate resistor (typically 4.7 Ω, as used in the datasheet switching test circuit) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 368 pF) and PCB inductance. Omitting it may cause overshoot, shoot-through, or oscillation-especially at high di/dt (>100 A/µs) in motor drive inverters.

Can STP260N6F6 replace STP16NF06 in existing designs?

No. STP16NF06 is a 60 V, 16 A device with ~0.18 Ω R_DS(on). STP260N6F6 is a 120 A, 2.4 mΩ part with significantly higher current capability, gate charge, and thermal mass. Direct replacement would overload gate drivers and require PCB layout revision for current paths, heatsinking, and thermal relief.