STMicroelectronics STP265N6F6AG

Overview

STP265N6F6AG from STMicroelectronics is an automotive-grade N-channel 60 V, 2.3 mΩ typ. R_DS(on), 180 A continuous drain current Power MOSFET in TO-220 package, using STripFET™ F6 trench-gate technology. It delivers high avalanche ruggedness (720 mJ E_AS), low gate charge (183 nC), and operates up to 175 °C junction temperature - deployed in high-current DC-DC converters and motor control inverters.

For engineers reviewing the STP265N6F6AG datasheet, STP265N6F6AG pinout, STP265N6F6AG application, or STP265N6F6AG equivalent, key selection factors include its AEC-Q101 qualification, 0.5 °C/W R_thj-case, 1235 pF C_oss, 56 ns t_rr, and source-drain diode forward voltage of 1.1 V at 180 A.

Technical Context

This MOSFET employs a refined STripFET™ F6 trench-gate structure optimized for ultra-low conduction loss and fast switching. Its 2.3 mΩ typical R_DS(on) at V_GS = 10 V and 60 A enables high-efficiency power stages in 48 V automotive systems.

The device supports high-pulse operation (I_DM = 720 A) and unclamped inductive switching with robust avalanche capability. Its gate drive characteristics - Q_g = 183 nC, Q_gd = 41 nC, and C_iss/C_oss/C_rss = 11800/1235/488 pF - are tuned for low gate drive power loss and controlled dv/dt in hard-switched topologies.

Key Specifications

Pinout & Package

STP265N6F6AG uses a standard TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring proper insulation when mounted on heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.

Compared with IRFB4115PBF and IXTH180N60L2, STP265N6F6AG offers lower R_DS(on), lower Q_g, AEC-Q101 compliance, and verified fast diode recovery - making it optimal for space-constrained, thermally demanding automotive power stages.

Availability

STP265N6F6AG is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and onboard chargers requiring stable component supply across extended product lifecycles.

Supply support for STP265N6F6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 48 V automotive architectures and industrial motor drives.

FAQ

Is STP265N6F6AG suitable for high-frequency switching above 200 kHz?

No - its 11800 pF C_iss and 183 nC Q_g result in elevated switching losses above 100 kHz. It is optimized for 20–100 kHz operation in high-current applications like EPS and DC-DC converters where conduction loss dominates. For >200 kHz, consider ST's MDmesh™ DK series with lower capacitance.

Does the TO-220 package have an electrically isolated tab?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the drain potential. Use insulating pads or shoulder washers rated for ≥60 V working voltage and 175 °C continuous operation.

What is the maximum allowable gate resistor value for reliable turn-on?

For 10 V gate drive and 120 A peak current, RG ≤ 4.7 Ω ensures td(on) ≤ 31 ns and tr ≤ 165 ns per datasheet test conditions. Exceeding 10 Ω increases switching time and loss significantly; use active gate drivers with ≥2 A peak sink/source capability for best performance.

Can STP265N6F6AG replace STW265N6F6AG in existing designs?

No - STW265N6F6AG is a TO-247 variant with different thermal and mechanical characteristics (R_thj-case = 0.35 °C/W, larger footprint). While electrically similar, the TO-220 STP265N6F6AG has higher thermal resistance and cannot be substituted without board layout and thermal redesign.