STMicroelectronics STP26N60DM6

Overview

STP26N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 165 mΩ typ. R_DS(on) at 10 V V_GS, and 18 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode (t_rr = 100 ns @ T_j = 25 °C), low gate charge (Q_g = 24 nC), and 100% avalanche tested ruggedness for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STP26N60DM6 datasheet, STP26N60DM6 pinout, STP26N60DM6 application, or STP26N60DM6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 0.96 °C/W R_thj-case, 1.02 µC Q_rr at 150 °C, and TO-220 package thermal performance in high-power SMPS designs.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology optimized for high-voltage switching with minimized recovery charge (Q_rr = 0.35 µC @ 25 °C) and ultra-fast reverse recovery time (t_rr = 100 ns). Its low C_iss (940 pF) and C_oss,eq (157 pF) enable efficient hard-switching up to 300 kHz in resonant topologies.

The device features Zener-protected gate oxide, 100% unclamped inductive switching (UIS) validation (E_AS = 360 mJ), and guaranteed operation across -55 to 150 °C junction temperature range. Its R_DS(on) exhibits <2.5× variation from -75 to 125 °C, supporting stable conduction loss in thermally demanding environments.

Key Specifications

Pinout & Package

STP26N60DM6 uses a TO-220 type A package with isolated tab (DRAIN connected to metal tab). The three-terminal configuration supports direct heatsinking via the tab while maintaining electrical isolation between drain and mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and IXFH30N60X, STP26N60DM6 delivers superior diode recovery performance (100 ns t_rr, 0.35 µC Q_rr), lower conduction loss (165 mΩ), and built-in gate protection-making it optimal for ZVS, phase-shift, and high-reliability UPS inverters where body diode behavior directly impacts efficiency and EMI.

Availability

STP26N60DM6 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, uninterruptible power systems, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STP26N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP26N60DM6 belongs to the MDmesh DM6 family-engineered specifically for high-efficiency, high-frequency AC–DC and DC–DC conversion in telecom, server, and industrial power systems where low Q_rr, fast t_rr, and rugged avalanche capability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP26N60DM6 supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12853 Rev 3. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries when heatsink thermal resistance is ≤1.15 °C/W.

Does STP26N60DM6 require an external gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen ringing caused by parasitic inductance and the device's 4.8 Ω intrinsic gate resistance. Figure 13 and 14 in DS12853 confirm this value achieves optimal switching times (t_d(on) = 13 ns, t_f = 8 ns) without oscillation in resistive and inductive test circuits.

How does the body diode performance compare at elevated temperature?

At T_j = 150 °C, reverse recovery time increases to 170 ns and Q_rr rises to 1.02 µC (Table 7), representing a 70 % increase in Q_rr versus 25 °C. This is fully characterized and validated-designs must account for higher recovery losses in high-temperature operation but retain full ruggedness.

Is the TO-220 tab electrically isolated?

No-the metal tab is internally connected to the Drain terminal, as confirmed by the "D(2, TAB)" notation in the pinout description and Figure 19 outline. Electrical isolation requires insulating hardware (e.g., silicone washer + shoulder washer) when mounting to grounded heatsinks.