STMicroelectronics STP26N65DM2

Overview

STP26N65DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 650 V V_DS, 156 mΩ typ. R_DS(on), 20 A continuous drain current, and fast-recovery body diode with 100 ns trr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS and server power supplies.

For engineers reviewing the STP26N65DM2 datasheet, STP26N65DM2 pinout, STP26N65DM2 application, or STP26N65DM2 equivalent, key selection criteria include avalanche ruggedness (530 mJ E_AS), low Q_g (35.5 nC), dv/dt immunity (50 V/ns), and TO-220 package thermal resistance (R_thJC = 0.74 °C/W).

Technical Context

This device implements ST's MDmesh DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode-enabling reduced switching losses and elimination of external anti-parallel diodes in resonant topologies. Its low C_iss (1480 pF) and C_oss,eq (140 pF) support high-frequency operation up to 300 kHz in hard-switched and soft-switched converters.

The MOSFET delivers robust unclamped inductive switching performance (I_AR = 3 A, E_AS = 530 mJ) and high dv/dt ruggedness (50 V/ns under defined test conditions), making it suitable for demanding industrial environments where voltage transients and layout-induced ringing are present.

Key Specifications

Pinout & Package

Delivered in TO-220 type A package with isolated tab (drain-connected). Standard through-hole mounting with screw-down thermal interface to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R041CFD7 and IXTH24N65X2, STP26N65DM2 uniquely balances low R_DS(on), ultra-low Q_rr, and integrated Zener protection-making it optimal for compact, high-frequency, high-reliability bridge converters where diode recovery and gate drive simplicity are design constraints.

Availability

STP26N65DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, EV onboard chargers, and motor drive inverters requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STP26N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP26N65DM2 belongs to the MDmesh DM2 high-voltage MOSFET product line, developed specifically for high-efficiency, high-frequency switched-mode power supplies requiring low conduction and switching losses in bridge and resonant topologies.

FAQ

What is the maximum safe operating junction temperature for STP26N65DM2?

The STP26N65DM2 has an operating junction temperature range of –55 °C to 150 °C. The absolute maximum TJ is 150 °C, and sustained operation above this threshold risks irreversible parametric shift or thermal runaway. Derating is required above TC = 100 °C, where ID drops to 12.6 A per datasheet Table 1.

Is the TO-220 tab electrically isolated or connected to the drain?

The metal tab on the STP26N65DM2 TO-220 package is internally connected to the drain terminal (pin 2), as confirmed by the pinout diagram (AM01476v1_tab) and mechanical drawings in DS12621 Rev 2. Electrical isolation from the heatsink is mandatory unless the heatsink is floating or drain-referenced.

Does STP26N65DM2 require external gate resistors for stability?

Yes - although the intrinsic gate resistance is 4.6 Ω, external gate resistors (typically 4.7–10 Ω) are recommended to dampen ringing, control dV/dt during turn-on/off, and prevent oscillation in high-di/dt layouts. Figure 13 and Figure 18 in DS12621 specify RG = 4.7 Ω for switching time characterization.

Can STP26N65DM2 replace older STP26NM60ND in existing designs?

Yes - STP26N65DM2 is a direct drop-in replacement for STP26NM60ND in most cases: same TO-220 package, identical pinout, improved 650 V rating (vs. 600 V), lower R_DS(on) (156 mΩ vs. 180 mΩ), and faster trr (100 ns vs. 250 ns). No layout or drive changes are needed, and avalanche capability is enhanced.